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Part ECAD Model Manufacturer Description Datasheet Download Buy Part
UJ3D06520TS UJ3D06520TS ECAD Model UnitedSiC 650V-20A Diode TO-220-2L
UJ3D1202TS UJ3D1202TS ECAD Model UnitedSiC 1200V-2A Diode TO-220-2L
UJ3D1725K2 UJ3D1725K2 ECAD Model UnitedSiC 1700V-25A Diode TO-247-2L
UJ3D06504TS UJ3D06504TS ECAD Model UnitedSiC 650V-4A Diode TO-220-2L
UJ3D1210K2 UJ3D1210K2 ECAD Model UnitedSiC 1200V-10A Diode TO-247-2L
UJ3D1220K2 UJ3D1220K2 ECAD Model UnitedSiC 1200V-20A Diode TO-247-2L

diode 1GHz Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2004 - Not Available

Abstract: No abstract text available
Text: Specification of Coaxial Pigtail Package Broadband Photo Diode ( 1GHz ) for Broadband Video Transport , €¦ … … … … … … … … … … … … . Coaxial Pigtail Package Broadband Photo Diode ( 1GHz ) for Broadband Video Transport Features Applications Flatness: + 0.5dB up to 1GHz l , measured at 80MHz, 450MHz, 600MHz, 850MHz and 1GHz . … … … … … … … … … … … … â , -40-UM Return Loss >=40 Grade L=0.8~0.85A/W Grade H>0.85A/W SC/APC Connector Broadband Photo Diode 1


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PDF CP-BP1000-xxxxxxUM CP-BP1000-SCA-X-40-UM
2009 - 40E-14

Abstract: 60E8 ODS-186 HP4291A M541 MA4PBL027 TTL LS 40e8 ODS-186 outline
Text: Lifetime Driven by Standard +5V TTL PIN Diode Driver Description This device is a Silicon-Glass Beam-Lead PIN diode fabricated TM with M/A-COM's patented HMIC process. This device features one silicon pedestal embedded in a low loss, low dispersion glass which supports the beam-leads. The diode is formed on the top of the pedestal, and airbridges connect the diode to the beam-leads. The topside is fully , ,4 -40V, 100MHz 2,4 0V, 1GHz 2,4 -3V, 1GHz 2,4 -10V, 1GHz 2,4 -40V, 1GHz 10mA, 100 MHz 3,4


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PDF MA4PBL027 40E-14 60E8 ODS-186 HP4291A M541 MA4PBL027 TTL LS 40e8 ODS-186 outline
2008 - MADP-000421-12940P

Abstract: ODS-186
Text: Silicon-Glass PIN diode chip fabricated with M/A-COM's patented HMICTM process. This device features two silicon pedestals embedded in a low loss, low dispersion glass. The diode is formed on the top of one pedestal and , MA4SPS422 Typ. 0.340 0.140 Symbol CT CT CT CT RS VF Conditions 0V, 1MHz 1 0V, 1GHz 1,3 - 40V, 1MHz 1 - 40V, 1GHz 1,3 +10mA, 1GHz 2,3 +10mA Units Typ. pF pF pF pF V 0.130 0.080 0.090 0.070 6.200 , Capacitance) + CPAR (Parasitic Capacitance) 2. 3 4. Series resistance RS is equivalent to the total diode


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PDF MA4SPS42X MA4SPS421, MA4SPS422 MA4SPS421 MADP-000421-12940P ODS-186
2010 - HP4291A

Abstract: MA4SPS421 MA4SPS422 MADP-000421-12940P
Text: a Silicon-Glass PIN diode chip fabricated with M/A-COM Technology Solutions patented HMICTM , diode is formed on the top of one pedestal and connections to the backside of the device are , Capacitance CT 0V, 1GHz 1,3 pF 0.080 Capacitance CT - 40V, 1MHz 1 pF 0.090 Capacitance CT - 40V, 1GHz 1,3 pF 0.070 0.130 Resistance RS +10mA, 1GHz 2,3 , diode resistance: RS = RJ (Junction Capacitance Junction Resistance) + RO (Ohmic Resistance) 3 RS


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PDF MA4SPS42X MA4SPS421, MA4SPS422 MA4SPS421 HP4291A MA4SPS421 MA4SPS422 MADP-000421-12940P
2012 - diode v2

Abstract: ODS-186 MA4PBLP027
Text: MA4PBL027 HMIC Silicon Beamlead PIN Diode V2 Features No Wirebonds Required Rugged , Frequency > 110 GHz 110 Nanosecond Minority Carrier Lifetime Driven by Standard +5V TTL PIN Diode Driver MA4PBLP027 Topside Description The MA4PBL027 is a silicon beamlead PIN diode fabricated with M/A-COM , glass which supports the beam-leads. The diode is formed on the top of the pedestal, and airbridges connect the diode to the beam-leads. The topside is fully encapsulated with silicon nitride and also has


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PDF MA4PBL027 MA4PBLP027 MA4PBL027 diode v2 ODS-186 MA4PBLP027
2009 - MADP-000421-12940P

Abstract: 25E-13 MA4SPS422 PIN diode MACOM SPICE model HP4291A MA4SPS421 MA4SPS42X ODS-186
Text: This device is a Silicon-Glass PIN diode chip fabricated with M/A-COM's patented HMICTM process. This device features two silicon pedestals embedded in a low loss, low dispersion glass. The diode is formed , 0.500 Capacitance CT 0V, 1MHz 1 pF 0.130 Capacitance CT 0V, 1GHz 1,3 pF 0.080 Capacitance CT - 40V, 1MHz 1 pF 0.090 Capacitance CT - 40V, 1GHz 1,3 pF 0.070 0.130 Resistance RS +10mA, 1GHz 2,3 6.200 3.100 Forward Voltage VF


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PDF MA4SPS42X MA4SPS421, MA4SPS422 MA4SPS421 MADP-000421-12940P 25E-13 MA4SPS422 PIN diode MACOM SPICE model HP4291A MA4SPS421 ODS-186
2008 - HP4291A

Abstract: SN 0203
Text: Description This device is a Silicon-Glass PIN diode chip fabricated with M/A-COM's patented HMICTM process. This device features two silicon pedestals embedded in a low loss, low dispersion glass. The diode is , MADP-030015 pF 1 0.31 0.78 0.38 Capacitance CT -40V, 1GHz Capacitance, 85°C CT -40V, 1GHz 1,3 pF 0.29 0.76 Resistance RS +10mA, 1GHz 2,3 0.72 0.49 RS +70mA, 1GHz 2,3 0.51 0.38 +10mA, 1GHz 2,3 1.08 0.82 +70mA, 1GHz


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PDF MADP-017015-1314 MADP-030015-1314 HP4291A SN 0203
2009 - 2N3866 application note

Abstract: pulse amplifier measurement 7A29 2N3866 RF output Design noise diode generator 2N3375 P-6056 Linear Technology Magazine AN122 2N3866
Text: 1GHz BANDWIDTH tRISE = 350ps TYPICALLY 5V TO 6V, 30ns WIDE 5 Z0 PROBE 1A DIODE UNDER , feeds a 1GHz oscilloscope.2, 3, 4 Diode Testing and Interpreting Results The measurement test , LDESIGN IDEAS Diode Turn-On Time Induced Failures in Switching Regulators Never Has So Much , Introduction Most circuit designers are familiar with diode dynamic characteristics such as charge storage , specified is diode forward turn-on time. This parameter describes the time required for a diode to turn


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PDF AN122 LTM8032 36VIN 2N3866 application note pulse amplifier measurement 7A29 2N3866 RF output Design noise diode generator 2N3375 P-6056 Linear Technology Magazine AN122 2N3866
2008 - PIN diode MACOM SPICE model

Abstract: MA4SPS421 PIN diode MACOM SPICE model madp
Text: Silicon-Glass PIN diode chip fabricated with M/A-COM's patented HMICTM process. This device features two silicon pedestals embedded in a low loss, low dispersion glass. The diode is formed on the top of one pedestal and , MA4SPS422 Typ. 0.340 0.140 Symbol CT CT CT CT RS VF Conditions 0V, 1MHz 1 0V, 1GHz 1,3 - 40V, 1MHz 1 - 40V, 1GHz 1,3 +10mA, 1GHz 2,3 +10mA Units Typ. pF pF pF pF V 0.130 0.080 0.090 0.070 6.200 , Capacitance) + CPAR (Parasitic Capacitance) 2. 3 4. Series resistance RS is equivalent to the total diode


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PDF MA4SPS42X MA4SPS421, MA4SPS422 MA4SPS421 PIN diode MACOM SPICE model MA4SPS421 PIN diode MACOM SPICE model madp
2010 - MADP-000502-12700P

Abstract: PIN diode ADS model MA4SPS502 PIN attenuator ADS model diode ADS model
Text: MA4SPS502 SURMOUNTTM PIN Diode Rev. V2 Features Case Style Outline Drawing , Applications This device is a silicon-glass PIN diode chip fabricated with M/A-COM Technology Solutions , diode is formed on the top of one pedestal and connections to the backside of the device are , herein without notice. MA4SPS502 SURMOUNTTM PIN Diode Rev. V2 Electrical Specifications @ TAMB = , -40V, 1GHz pF 0.090 100mA, 100MHz 1.4 2.2 20mA, 100MHz 2.4 3.2 VF


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PDF MA4SPS502 ODS-12701 MADP-000502-12700P PIN diode ADS model MA4SPS502 PIN attenuator ADS model diode ADS model
2005 - PIN diode MACOM SPICE model

Abstract: No abstract text available
Text: diode chip fabricated with M/A-COM's patented HMICTM process. This device features two silicon pedestals embedded in a low loss, low dispersion glass. The diode is formed on the top of one pedestal and , equivalent to the total diode resistance : Rs = Rj ( Junction Resistance) + Rc ( Ohmic Resistance) Rs and CT , MA4SPS633, MA4SPS634 MA4SPS630 Series Typical Performance Curves @ +25 °C Rs vs. Current (@ 100MHz & 1GHz ) MA4SPS633 100 100MHz Rs (ohms) Rs (ohms) 1GHz 10 1GHz 10 100 100MHz MA4SPS630 Series V1 Rs vs. Current


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PDF MA4SPS633, MA4SPS634 MA4SPS630 MA4SPS634 PIN diode MACOM SPICE model
2005 - PIN diode MACOM SPICE model

Abstract: MA4SPS421 Imax31 HP4291A MA4SPS420 MA4SPS422 25E-13
Text: seconds Description and Applications This device is a Silicon-Glass PIN diode chip fabricated with M , , low dispersion glass. The diode is formed on the top of one pedestal and connections to the backside , equivalent to the total diode resistance : Rs = Rj ( Junction Resistance) + Rc ( Ohmic Resistance) 3. Rs , . Current (@ 100MHz & 1GHz ) MA4SPS421 Rs vs. Current (@ 100MHz & 1GHz ) MA4SPS422 100 Rs (ohms , ) Current (A) Ct vs Voltage (@ 100MHz & 1GHz ) MA4SPS421 Ct vs Voltage (@ 100MHz & 1GHz ) MA4SPS422


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PDF MA4SPS421, MA4SPS422 MA4SPS420 MA4SPS422 PIN diode MACOM SPICE model MA4SPS421 Imax31 HP4291A 25E-13
900mhz chip antenna

Abstract: M9608 1270-016 microwave transmitter circuit diagram microstrip antenna HIGH POWER ANTENNA SWITCH PIN DIODE pin diode microstrip Microwave PIN diode 10KW 25KW
Text: PIN DIODE UM9601-UM9608 For Microstrip 900MHz Antenna Switches and Microwave Applications , quarter-wave antenna switch is given. This switch which employs a low cost UM9401 axial leaded PIN diode in , diodes greatly minimizes handling problems commonly associated with passivated PIN diode chips while , is considerably higher than PIN diode chips can provide. Environmentally, the UM9601-UM9608 series , €” 1.5 1.7 n I = 100mA F = 1GHz Parallel Resistance Rp 5K — — 7K — — n Zero Bias F = 1GHz Total


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PDF UM9601-UM9608 900MHz UM9601-UM9608 635mm) 5000pF VJ0805A300KF UM9401 UM9601 900mhz chip antenna M9608 1270-016 microwave transmitter circuit diagram microstrip antenna HIGH POWER ANTENNA SWITCH PIN DIODE pin diode microstrip Microwave PIN diode 10KW 25KW
F0311018S

Abstract: Frequency Generator 1GHz Picosecond Pulse Labs amplifier picosecond 2100
Text: best choice as the interface IC to join analog circuits to ECL circuits. F0311018S 1GHz Limiting , ) Vamp PIN=-40dBm f3Bm PIN=-40dBm RL=50 RL=50 F0311018S 1GHz Limiting Amplifier , VSS Supply Voltage F0311018S 1GHz Limiting Amplifier Test Circuits 1)AC Characteristics , Oscilloscope 50 * DC Block (Picosecond Pulse Labs:model 5501) F0311018S 1GHz Limiting Amplifier , 18.0 4.5 5.0 VDD(V) 5.5 1.14 4.5 5.0 VDD(V) 5.5 F0311018S 1GHz Limiting


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PDF F0311018S F0311018S Frequency Generator 1GHz Picosecond Pulse Labs amplifier picosecond 2100
2009 - HP4291A

Abstract: ODS213
Text: , glass PIN diode surmount chip fabricated with M/A-COM's patented HMICTM process. This device features two silicon pedestals embedded in a low loss, low dispersion glass. The diode is formed on the top , -030025 0.50 Capacitance 1, 85°C pF 0.23 CT 1 - 40V, 1GHz 1,3 0.29 pF 0.23 0.50 CT - 40V, 1GHz 1,3 0.56 pF 0.22 - RS +10mA, 1GHz 2,3 1.01 0.65 RS +70mA, 1GHz 2,3 0.64 0.45 Resistance , 85°C RS +10mA, 1GHz 2,3


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PDF MADP-017025-1314 MADP-030025-1314 HP4291A ODS213
2009 - PO74G38072A

Abstract: No abstract text available
Text: PO74G38072A www.potatosemi.com 1.2V-3.6V 1:2 CMOS Clock Driver 1GHz TTL/CMOS Potato Chip FEATURES: DESCRIPTION: . Patented technology . Max input frequency > 1GHz . Operating frequency up to 1GHz with 2pf load . Operating frequency up to 700MHz with 5pf load . Operating frequency up to , PO74G38072A is designed for world top performance using submicron CMOS technology to achieve 1GHz TTL , 3.3V CMOS 1 input to 2 outputs Buffered driver to achieve 1GHz output frequency. Typical applications


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PDF PO74G38072A 700MHz 400MHz 200MHz PO74G38072A PO74G38072ASU 150mil PO74G38072AS PO74G38072ASR
Frequency Generator 1GHz

Abstract: PO74G38072A PO74G38072AS PO74G38072ASR PO74G38072ASU
Text: PO74G38072A 3.3V 1:2 CMOS Clock Driver 02/13/07 1GHz TTL/CMOS Potato Chip FEATURES: DESCRIPTION: . Patented technology . Max input frequency > 1GHz . Operating frequency up to 1GHz with 2pf , designed for world top performance using submicron CMOS technology to achieve 1GHz TTL output frequency , to 2 outputs Buffered driver to achieve 1GHz output frequency. Typical applications are clock and , Semiconductor Corporation PO74G38072A 3.3V 1:2 CMOS Clock Driver 02/13/07 1GHz TTL/CMOS Potato Chip


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PDF PO74G38072A 700MHz 400MHz 200MHz PO74G38072A PO74G38072ASU PO74G38072AS PO74G38072ASR Frequency Generator 1GHz PO74G38072AS PO74G38072ASR PO74G38072ASU
1994 - Not Available

Abstract: No abstract text available
Text: ) Noise figure test : - diode is inserted in a tuned stripline circuit - local oscillator frequency 1GHz - , TMMBAT 19 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode primarly intended for UHF mixers and ultrafast switching applications. Matched batches are available on request. ABSOLUTE MAXIMUM RATINGS (limiting values) Symbol VRRM IF IFSM Tstg Tj TL Parameter Repetitive Peak , Symbol C T amb = 25°C T amb = 25°C T amb = 25°C Test Conditions VR = 0V IF = 20mA f = 1GHz f = 1GHz


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2009 - 2N2369 avalanche

Abstract: 2N2369 transistor pulse generator 2N2369 AVALANCHE PULSE GENERATOR Tektronix P6056 2N2501 MOTOROLA P-6056 CTX-02-16004 motorola transistor handbook 2N3866 application note crystal generator 1GHz
Text: TEKTRONIX 7104/7A29/7B10/7B15 1GHz (tRISE = 350ps) OSCILLOSCOPE 7A29 Figure 7. Complete Diode , the diode under test. A Z0 probe monitors the measurement point and feeds a 1GHz oscilloscope.2, 3 , Application Note 122 January 2009 Diode Turn-On Time Induced Failures in Switching Regulators , Introduction A potential difficulty due to diode turn-on time is that the resultant transitory "overshoot" voltage across the diode , even when restricted to nanoseconds, can induce overvoltage stress, causing


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PDF AN122 350ps an122f AN122-19 AN122-20 2N2369 avalanche 2N2369 transistor pulse generator 2N2369 AVALANCHE PULSE GENERATOR Tektronix P6056 2N2501 MOTOROLA P-6056 CTX-02-16004 motorola transistor handbook 2N3866 application note crystal generator 1GHz
2009 - madp-030025-1314

Abstract: for30
Text: M/A-COM Products Rev 4 Case Style ODS 1314 Description This device is a silicon, glass PIN diode , embedded in a low loss, low dispersion glass. The diode is formed on the top of one pedestal and , RS RS RS RS VF IR Conditions - 40V, 1MHz 1 - 40V, 1GHz 1,3 Units pF pF pF V A Min , Max 0.56 MADP-017025 MADP-030025 Capacitance 1, 85°C Resistance 2 - 40V, 1GHz 1,3 +10mA, 1GHz 2,3 Resistance 2 Resistance , 85°C Resistance 2, 85°C Forward Voltage Reverse Leakage Current


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PDF MADP-017025-1314 MADP-030025-1314 madp-030025-1314 for30
2008 - MADP-0XX025

Abstract: HP4291A
Text: Description This device is a Silicon-Glass PIN diode chip fabricated with M/A-COM's patented HMICTM process. This device features two silicon pedestals embedded in a low loss, low dispersion glass. The diode is , Capacitance 1, 85°C pF 0.23 CT 1 - 40V, 1GHz 1,3 0.29 pF 0.23 0.50 CT - 40V, 1GHz 1,3 0.56 pF 0.22 - RS +10mA, 1GHz 2,3 1.01 0.65 RS +70mA, 1GHz 2,3 0.64 0.45 Resistance , 85°C RS +10mA, 1GHz 2,3 1.48 -


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PDF MADP-017025-1314 MADP-030025-1314 MADP-0XX025 HP4291A
2012 - AN11225

Abstract: clapp oscillator
Text: AN11225 Demonstration of a 1GHz discrete VCO based on the BFR92A Rev. 1.0 — 26 June 2012 , Oscillator based on the BFR92A NPN wideband transistor. The device is oscillating on 1GHz and has a tuning , a 1GHz discrete VCO based on the BFR92A Revision history Rev Date Description 1.0 , Demonstration of a 1GHz discrete VCO based on the BFR92A 1. Introduction The VCO demonstrated by this application note is a low-power single transistor commoncollector Colpitts VCO with a center frequency of 1GHz


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PDF AN11225 BFR92A BFR92A, BFR92A 100MHz. 20120626rs. AN11225 clapp oscillator
2007 - for30

Abstract: No abstract text available
Text: device is a Silicon-Glass PIN diode chip fabricated with M/A-COM's patented HMICTM process. This device features two silicon pedestals embedded in a low loss, low dispersion glass. The diode is formed on the top , Lifetime CT CT CT RS RS RS RS VF IR -40V, 1MHz -40V, 1GHz 1 MADP-030015 0.79 0.78 0.76 0.49 0.38 0.82 0.69 0.85 0.32 0.31 0.29 0.72 0.51 1.08 0.84 0.74 - 0.38 1,3 -40V, 1GHz 1,3 +10mA, 1GHz 2,3 +70mA, 1GHz +10mA, 1GHz +70mA, 1GHz +10mA | -115V | F1= 1800MHz F2 = 1810MHz Input Power = 0dBm I bias =


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PDF MADP-017015-1314 MADP-030015-1314 for30
1994 - DIODE BAT 19

Abstract: BAT19
Text: BAT 19 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode primarly , Min. Typ. C Tamb = 25°C VR = 0V f = 1GHz 1.2 pF Tamb = 25°C IF = 20mA Krakauer Method 100 ps F (2) Tamb = 25°C f = 1GHz 6 dB * On infinite heatsink with 4mm lead length (1) Pulse test: tp 300µs < 2%. (2) Noise figure test : - diode is inserted in a tuned stripline circuit - local oscillator frequency 1GHz - local oscillator power 1mW - intermediate


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2004 - LNA Mixer VCO 2.4 GHz

Abstract: 800-1200MHZ SA620 SA620DK SA7025 philips radio 900MHz
Text: INTEGRATED CIRCUITS SA620 Low voltage LNA, mixer and VCO ­ 1GHz Product data Supersedes data , 1GHz low voltage LNA, mixer and VCO DESCRIPTION SA620 PIN CONFIGURATION The SA620 is a , . Block Diagram 2004 Dec 14 2 Philips Semiconductors Product data 1GHz low voltage LNA , 14 3 Philips Semiconductors Product data 1GHz low voltage LNA, mixer and VCO SA620 , (max) -105 dB MHz dBc/Hz Philips Semiconductors Product data 1GHz low voltage LNA


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PDF SA620 SA620 800-1200MHz. 900MHz LNA Mixer VCO 2.4 GHz 800-1200MHZ SA620DK SA7025 philips radio 900MHz
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