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Part Manufacturer Description Datasheet Download Buy Part
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C

diode 009 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1996 - Not Available

Abstract: No abstract text available
Text: N·m g 1 ESAC85-009R Outline Drawings [mm] http://www.fujisemi.com FUJI Diode 009 009 2 ESAC85-009R http://www.fujisemi.com FUJI Diode Forward Characteristic (typ , http://www.fujisemi.com ESAC85-009R Schottky Barrier Diode Maximum Rating and Characteristics , *Rating per element FUJI Diode Symbols VRSM VRRM Io IFSM Tj Tstg Conditions tw=500ns, duty=1/40 , 3 ESAC85-009R http://www.fujisemi.com FUJI Diode Current Derating 160 (Io-Tc


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PDF ESAC85-009R 500ns,
2003 - 28776

Abstract: No abstract text available
Text: Vdc max. transient voltage ZENER DIODE 0.09 oz. (2.55 gms) 0.129 oz. (3.45 gms) w/ mounting pad , HIGH-PERFORMANCE RELAY MGSD SENSITIVE .100 GRID DIODE SUPPRESSED HIGH-PERFORMANCE RELAY MGSDD SENSITIVE .100 GRID DIODE SUPPRESSED/PROTECTED HIGH-PERFORMANCE RELAY MGST SENSITIVE .100 GRID DIODE , RF switching Suppression diode Hermetically sealed High shock & vibration ratings I Mounting pads , RANGE SEMICONDUCTOR CHARACTERISTICS DIODE OperateTime: 4.0 ms max. Release Time: MGS: 2.0 ms max


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PDF MIL-R-39016/41 MIL-R-39016/42 MIL-R-39016/43 MIL-R-28776/7 28776
Not Available

Abstract: No abstract text available
Text: , Junction to Case vs Pulse Duration Thermal Impedance (° C/W) 0.12 Diode 0.09 0.9 0.7 0.06 , - Low diode VF - RBSOA and SCSOA rated • Kelvin emitter for easy drive • High level of , Chopper ratings and characteristics Maximum Reverse Leakage Current IF Diode Forward Voltage , VRRM Maximum Repetitive Reverse Voltage APTGL700DA120D3G IGBT Parallel protection diode ratings and , Current IF Diode Forward Voltage trr Reverse Recovery Charge Err Typ Reverse Recovery


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PDF APTGL700DA120D3G
Not Available

Abstract: No abstract text available
Text: , Junction to Case vs Pulse Duration Thermal Impedance (° C/W) 0.12 Diode 0.09 0.9 0.7 0.06 , leakage current - Low switching losses - Soft recovery parallel diodes - Low diode VF - RBSOA and , 2400 A Chopper ratings and characteristics Maximum Reverse Leakage Current IF Diode , Characteristic VRRM Maximum Repetitive Reverse Voltage APTGL700SK120D3G IGBT Parallel protection diode , Maximum Reverse Leakage Current IF Diode Forward Voltage trr Reverse Recovery Charge Err


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PDF APTGL700SK120D3G
2010 - Not Available

Abstract: No abstract text available
Text: 0.0001 0.001 Single Pulse 0.01 0.1 1 10 Diode 0.09 0.03 0 0.00001 Rectangular Pulse Duration , losses - Soft recovery parallel diodes - Low diode VF - RBSOA and SCSOA rated · Kelvin emitter for easy , Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery , APTGL700SK120D3G ­ Rev 0 V ns µC mJ www.microsemi.com APTGL700SK120D3G IGBT Parallel protection diode , Qrr Err Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time


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PDF APTGL700SK120D3G
2003 - zener diode 1282

Abstract: JMGAD
Text: DIODE 0.09 oz. (2.55 gms) 0.129 oz. (3.45 gms) w/ mounting pad attached VIBRATION RESISTANCE .1 , HIGH-PERFORMANCE RELAY MGAD STANDARD .100 GRID DIODE SUPPRESSED HIGH-PERFORMANCE RELAY MGADD STANDARD .100 GRID DIODE SUPPRESSED/PROTECTED HIGH-PERFORMANCE RELAY MGAT STANDARD .100 GRID DIODE SUPPRESSED , Suppression diode Hermetically sealed High shock & vibration ratings I Mounting pads I Excellent RF switching , CHARACTERISTICS DIODE OperateTime: 2.0 ms max. ReleaseTime: MGA: 1.5 ms max. MGAD/MGADD: 4.0 ms max


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PDF MIL-R-39016/17 MIL-R-39016/18 MIL-R-39016/19 MIL-R-28776/6 zener diode 1282 JMGAD
2010 - IGBT parallel

Abstract: RG08
Text: Impedance (°C/W) 0.9 0.7 0.06 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 Diode 0.09 0.03 , switching losses - Soft recovery parallel diodes - Low diode VF - RBSOA and SCSOA rated · Kelvin emitter for , Qrr Err Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time , APTGL700DA120D3G IGBT Parallel protection diode ratings and characteristics Symbol Characteristic VRRM Maximum Repetitive Reverse Voltage IRRM IF VF trr Qrr Err Maximum Reverse Leakage Current DC Forward Current Diode


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PDF APTGL700DA120D3G IGBT parallel RG08
1996 - bsm 25 gd 1200 n2

Abstract: bsm 75 gd 120 n2 siemens mosfet BSM 50 siemens igbt bsm 50 gd 120 n2 BSM15GD BSM15GD120DN Thyristor Tabelle BSM15GD120DN2 BSM300
Text: DIODE BSM30 Econo2 1.5 IGBT 0,6 DIODE 1,5 IGBT 0.09 DIODE BSM400 Half , IGBT 0.12 DIODE 0.28 IGBT 0.09 DIODE 0.18 BSM75 Econo3 BSM100 Econo3 , IGBT 0.09 DIODE 0.18 BSM200 IGBT Single switch DIODE 0.08 BSM200 Half bridge2 , BYM300 Diode 0.125 DIODE 0.09 Semiconductor Group 1 Table 4 Thermal Time Constants of , switch DIODE BYM300 Diode BYM600 Diode 0.21 0.05 0.17 DIODE 0.17 DIODE 0.09


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PDF
BT diode

Abstract: ECONOPACK mounting instructions bsm 25 gd 1200 n2 bsm 75 gd 120 n2 bsm 50 gd 120 n2 calculation of IGBT snubber siemens igbt BSM 300 siemens igbt BSM 100 diode bym 26 BSM15GD120DN2
Text: 100 H a lf b rid g e 2 IG BT DIODE 0.16 0.3 0.1 0.25 0.09 0.18 0.08 0.15 0.05 0.125 0.045 0.09 , e DIODE 0.09 DIODE 0.21 0.05 0.17 0.17 IG BT 0.32 0.07 IG B T 0.4 0.1 IG BT 0.63 0.13 IG BT 0.75 0.2 , Chopper, IGBT mit Diode auf der Kollek torseite · 3- Phasen- Vollbrücke Insulated Gate Bipolar , current range of 10 A . 400 A, as: · Single switch · Halfbridge · Chopper, IGBT with diode on collector , connections on top Large clearances and creepage distances Parallel connected fast recovery inverse diode


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PDF
2003 - philips zener diode c24

Abstract: Zener diode smd marking code .18 C30 DIODE ZENER DIODE ZENER smd marking 72 Zener diode smd marking 22 iz c220 zener diode smd diode UM 35 DIODE smd marking code UM 31 philips zener diode c12 Zener diode smd marking code C24
Text: 0.07 0.07 0.07 0.08 0.08 0.08 0.08 0.09 0.09 0.09 0.09 0.09 0.09 MAX. 0.09 0.10 0.10 0.10 0.10 0.11 , COEFFICIENT CURRENT SZ (%/K) at IZ MIN. 0.09 0.09 0.09 0.09 0.09 0.09 MAX. 0.13 0.13 0.13 0.13 0.13 0.13 IZ , 270 Description Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode Zener diode


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PDF M3D168 BZG01 DO-214AC /imaging/BITTING/CPL/20030424/04232003 HTML04232003/BZG01-C10 May-06-2003 philips zener diode c24 Zener diode smd marking code .18 C30 DIODE ZENER DIODE ZENER smd marking 72 Zener diode smd marking 22 iz c220 zener diode smd diode UM 35 DIODE smd marking code UM 31 philips zener diode c12 Zener diode smd marking code C24
2014 - Not Available

Abstract: No abstract text available
Text: Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R205- 009 , www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 7 QW-R205- 009 .b 3N65K-MK ï , www.unisonic.com.tw 2 of 7 QW-R205- 009 .b 3N65K-MK  Preliminary Power MOSFET ABSOLUTE MAXIMUM , ) EAS Avalanche Energy Repetitive (Note 2) EAR 7.5 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt , 3.58 °C/W 2.5 3 of 7 QW-R205- 009 .b 3N65K-MK  Preliminary Power MOSFET


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PDF 3N65K-MK 3N65K-MK QW-R205-009
2008 - BSS225

Abstract: L6327
Text: specified Parameter Symbol Conditions Continuous drain current ID Value T A=25 °C 0.09 T A=70 °C 0.073 I D,pulse T A=25 °C 0.36 Reverse diode dv /dt dv /dt I D= 0.09 A , (on),max 45 ID 0.09 A V DS · n-channel · enhancement mode 1) · Logic , Drain-source on-state resistance R DS(on) V GS=4.5 V, I D= 0.09 A - 30 45 V GS=10 V, I D= 0.09 , voltage V plateau - 3.3 - V - - 0.09 A - - 0.36 - 0.75 1.2


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PDF BSS225 L6327: 3000PCS/reel BSS225 L6327
2008 - Not Available

Abstract: No abstract text available
Text: =25 °C T A=70 °C Pulsed drain current I D,pulse T A=25 °C I D= 0.09 A, V DS=480 V, di /dt =200 A/µs, T j,max=150 °C Value 0.09 0.073 0.36 Unit A Reverse diode d v /dt dv /dt 6 kV/µs Gate , level · dv /dt rated · Qualified according to AEC Q101 Product Summary V DS 1) 600 45 0.09 V , R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D= 0.09 A V GS=10 V, I D= 0.09 A |V DS|>2|I D|R DS(on , charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward


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PDF BSS225 IEC61249221 H6327: 3000PCS/reel
1999 - BSS225

Abstract: No abstract text available
Text: drain current Symbol Conditions ID T A=25 °C T A=70 °C Pulsed drain current I D,pulse T A=25 °C I D= 0.09 A, V DS=480 V, di /dt =200 A/µs, T j,max=150 °C Value 0.09 0.073 0.36 Unit A Reverse diode dv /dt , level · dv /dt rated Product Summary V DS 1) 600 45 0.09 V A R DS(on),max ID SOT89 , Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D= 0.09 A 600 1.3 1.9 2.3 0.1 µA V - 10 28 5 100 45 nA V GS=10 V, I D= 0.09 A |V DS|>2|I D|R DS(on)max, I D=0.075 A


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PDF BSS225 Q67042-S4266 E6327: 3000PCS/reel BSS225
1999 - MARKING KD

Abstract: BSS225
Text: Symbol Conditions ID T A=25 °C T A=70 °C Pulsed drain current I D,pulse T A=25 °C I D= 0.09 A, V DS=480 V, di /dt =200 A/µs, T j,max=150 °C Value 0.09 0.073 0.36 Unit A Reverse diode d v /dt dv /dt 6 , level · dv /dt rated Product Summary V DS 1) 600 45 0.09 V A R DS(on),max ID SOT89 , R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D= 0.09 A V GS=10 V, I D= 0.09 A |V DS|>2|I D|R DS(on , charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward


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PDF BSS225 L6327: 3000PCS/reel MARKING KD BSS225
2008 - Not Available

Abstract: No abstract text available
Text: level · dv /dt rated · Qualified according to AEC Q101 Product Summary V DS 1) 600 45 0.09 V , A=25 °C I D= 0.09 A, V DS=480 V, di /dt =200 A/µs, T j,max=150 °C Value 0.09 0.073 0.36 Unit A Reverse diode d v /dt dv /dt 6 kV/µs Gate source voltage ESD sensitivity (HBM) as per MIL-STD , current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D= 0.09 A V GS=10 V, I D= 0.09 A |V DS|>2|I D|R DS(on)max, I D=0.075 A - 28 45 Transconductance


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PDF BSS225 L6327: 3000PCS/reel
2005 - SMD zener diode 7.5 b ac

Abstract: 233 ZENER DIODE CZRT55C SMD zener diode 202 SMD zener diode 7.5 b zener diode mv 5 ZENER DIODE 18
Text: Surface Mount Zener Diodes COMCHIP SMD DIODE SPECIALIST CZRT55C4V7 Thru CZRT55 C39 Voltage , types COMCHIP SMD DIODE SPECIALIST Nominal Zener Voltage Part Number VZ @ IZT Nom. V Min. V Max , -0.055 -0.05 -0.035 -0.015 0.005 0.02 0.03 0.045 0.05 0.055 0.065 0.07 0.075 0.08 0.08 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.11 134 118 109 100 92 84 76 67 59 54 49 44 40 36 33 30 28 25 23 20 , lead temperature (TL) at 30OC, from the diode body. 4.Zener Impedance (ZZ) Derivation. The zener


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PDF CZRT55C4V7 CZRT55 410mW OT-23 OT-23, MIL-STD-202, CDST4148 No-8671 CZRT55C39) SMD zener diode 7.5 b ac 233 ZENER DIODE CZRT55C SMD zener diode 202 SMD zener diode 7.5 b zener diode mv 5 ZENER DIODE 18
2014 - Not Available

Abstract: No abstract text available
Text: limiting is not provided. TPS55010EVM- 009 provides a Zener diode (5.6 V nominal) in series with a resistor , User's Guide SLVU459A – May 2011 – Revised June 2014 TPS55010EVM- 009 , Low-Power, Isolated Fly-Buck™ Converter This user's guide contains information for the TPS55010EVM- 009 evaluation module , TPS55010EVM- 009 . 1 2 3 4 Contents Introduction , . 10 List of Figures 1 TPS55010EVM- 009 Efficiency


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PDF SLVU459A TPS55010EVM-009, TPS55010EVM-009 PWR009) TPS55010EVM-009.
1999 - ISS 99 diode

Abstract: BSS225 L6327
Text: current ID Value T A=25 °C 0.09 T A=70 °C 0.073 I D,pulse T A=25 °C 0.36 Reverse diode dv /dt dv /dt I D= 0.09 A, V DS=480 V, di /dt =200 A/µs, T j,max=150 °C Gate , Charge Characteristics V DD=400 V, I D= 0.09 A, V GS=0 to 10 V nC Reverse Diode Diode , (on),max 45 ID 0.09 A V DS · n-channel · enhancement mode 1) · Logic , DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D= 0.09


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PDF BSS225 L6327: 3000PCS/reel ISS 99 diode BSS225 L6327
2008 - Not Available

Abstract: No abstract text available
Text: level · dv /dt rated · Qualified according to AEC Q101 Product Summary V DS 1) 600 45 0.09 V , A=25 °C I D= 0.09 A, V DS=480 V, di /dt =200 A/µs, T j,max=150 °C Value 0.09 0.073 0.36 Unit A Reverse diode d v /dt dv /dt 6 kV/µs Gate source voltage V GS ±20 V ESD Class , R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D= 0.09 A V GS=10 V, I D= 0.09 A |V DS|>2|I D|R DS(on , charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward


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PDF BSS225 L6327: 3000PCS/reel JESD22A114HBM
2008 - Not Available

Abstract: No abstract text available
Text: Parameter Symbol Conditions Continuous drain current ID Value T A=25 °C 0.09 T A=70 °C 0.073 I D,pulse T A=25 °C 0.36 Reverse diode dv /dt dv /dt I D= 0.09 A, V DS , DS(on),max 45 Ω ID 0.09 A V DS • n-channel • enhancement mode 1) â , Drain-source on-state resistance R DS(on) V GS=4.5 V, I D= 0.09 A - 30 45 Ω V GS=10 V, I D= 0.09 , voltage V plateau - 3.3 - V - - 0.09 A - - 0.36 - 0.75 1.2


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PDF BSS225 IEC61249Â H6327: 3000PCS/reel
1999 - PG-SOT89

Abstract: BSS225 dd sot89 E6327 Q67042-S4266
Text: Continuous drain current ID Value T A=25 °C 0.09 T A=70 °C 0.073 I D,pulse T A=25 °C 0.36 Reverse diode dv /dt dv /dt I D= 0.09 A, V DS=480 V, di /dt =200 A/µs, T j,max=150 °C , Charge Characteristics V DD=400 V, I D= 0.09 A, V GS=0 to 10 V nC Reverse Diode Diode , (on),max 45 ID 0.09 A V DS · n-channel · enhancement mode 1) · Logic , DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D= 0.09


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PDF BSS225 PG-SOT89 Q67042-S4266 E6327: 3000PCS/reel PG-SOT89 BSS225 dd sot89 E6327 Q67042-S4266
2014 - 62783

Abstract: No abstract text available
Text: -20 Packing Tube Tube Tape Reel Tube Tape Reel 1 of 7 QW-R113- 009 .F 62783  LINEAR , ., LTD www.unisonic.com.tw 2 of 7 QW-R113- 009 .F 62783  LINEAR INTEGRATED CIRCUIT PIN , TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 7 QW-R113- 009 .F 62783  LINEAR INTEGRATED CIRCUIT , TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 7 QW-R113- 009 .F 62783  LINEAR INTEGRATED CIRCUIT , Supply Voltage VCC 50 V Input Voltage VIN 15 V Clamp Diode Reverse Voltage VR 50 V Output


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PDF OP-20 OP-18 -500mA DIP-18 62783G-D18-T 62783G-S18-T 62783G-S18-R 62783G-S20-T 62783G-S20-R QW-R113-009 62783
2012 - 62783L-S18-R

Abstract: TRANSISTOR ARRAY SOP18 SATURATION 62783l 62783G-S18-R 62783 s18r
Text: 5 QW-R113- 009 .C 62783 PIN CONFIGURATION LINEAR INTEGRATED CIRCUIT SCHEMATICS(EACH DRIVER , UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R113- 009 .C 62783 LINEAR , RATINGS UNIT Supply Voltage VCC 50 V Input Voltage VIN 15 V Clamp Diode Reverse Voltage VR 50 V Output Current IOUT -500 mA/ch Clamp Diode Forward Current IF 500 mA 1470 DIP-18 mW Power Dissipation SOP-18 960 , Output On Input Voltage Output Off Clamp Diode Reverse Voltage Clamp Diode Forward Current DIP-18 Power


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PDF OP-18 -500mA DIP-18 62783L-D18-T 62783L-S18-T 62783L-S18-R 62783G-D18-T 62783G-S18-T 62783G-S18-R OP-18 TRANSISTOR ARRAY SOP18 SATURATION 62783l 62783 s18r
2009 - 62783

Abstract: 8ch driver SOP18 62783G-S18-R s18r
Text: ., Ltd Packing Tape Reel 1 of 5 QW-R113- 009 .a 62783 Preliminary PIN CONFIGURATION , Of CH1 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R113- 009 .a 62783 , UNIT Supply Voltage VCC 50 V Input Voltage VIN 15 V Clamp Diode Reverse Voltage VR 50 V Output Current IOUT -500 mA/ch Clamp Diode Forward Current IF 500 mA Power Dissipation 960 mW , Output Current Input Voltage Output On Input Voltage Output Off Clamp Diode Reverse Voltage Clamp


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PDF -500mA OP-18 62783G-S18-R QW-R113-009 62783 8ch driver SOP18 62783G-S18-R s18r
Supplyframe Tracking Pixel