BUK9Y11-30B,115 datasheet
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NXP Semiconductors
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N-channel TrenchMOS logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 59 A; Q<sub>gd</sub> (typ): 5.4 nC; R<sub>DS(on)</sub>: 9@10V11@5V12@4.5V mOhm; Thermal Resistance: 2 K/W; V<sub>DS</sub>max: 30 V; Package: SOT669 (LFPAK); Container: Tape reel smd
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Original
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