PMZ250UN datasheet
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NXP Semiconductors
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N-channel TrenchMOS extremely low level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 2.28 A; Q<sub>gd</sub> (typ): 0.18 nC; R<sub>DS(on)</sub>: 300@4.5 V 400@2.5 V mOhm; V<sub>DS</sub>max: 20 V
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Original
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