PHN210,118 datasheet
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NXP Semiconductors
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Dual N-channel enhancement mode TrenchMOS transistor - Configuration: Dual N-channel ; I<sub>D</sub> DC: 3.4 A; R<sub>DS(on)</sub>: 100@10V200@4.5V mOhm; V<sub>DS</sub>max: 30 V; Package: SOT96-1 (SO8); Container: Tape reel smd
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Original
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