BLS2731-110,114 datasheet
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NXP Semiconductors
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Microwave power transistor - Application: S-band Radar ; Description: S-Band Radar Bipolar RF POWER Transistor ; Duty cycle: 10 %; Efficiency: 40 %; Frequency: 2700 - 3100 MHz; Load power: 110 W; Operating voltage: 40 VDC; Power gain: 8 dB; Pulse width: 100 us; Package: SOT423A (CDFM2); Container: Blister pack
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Original
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