PMBFJ174 datasheet
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NXP Semiconductors
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PMBFJ174 - P-channel silicon field-effect transistors - CRS: 4 pF; CRS TYP: 4 pF; IDSS: 20 to 135 mA; IDSS max.: 135 mA; IDSS min.: 20 mA; IG: 50 mA; IG: 50 ; RDS(on): 85 Ohm; toff: 15 ns; toff: 15 ns; ton: 7 ns; ton: 7 ns; -V(P)GS: 5 to 10 V; -V(P)GS MAX: 10 V; -V(P)GS MIN: 5 V; VDSmax: 30 V
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Original
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