BF510,215 datasheet
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NXP Semiconductors
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N-channel silicon field-effect transistors - CRS: 0.4 pF; I<sub>DSS</sub>: 0.7 to 3 mA; I<sub>G</sub>: 10 mA; Kind: RF stages FM portables, car radios, main radios and mixer stages ; -V(P)GS: typ. 0.8 V; V<sub>DS</sub>max: 20 V; Y<sub>FS</sub>: 2.5 ms; Package: SOT23 (TO-236AB); Container: Tape reel smd
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Original
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