PHK04P02T,518 datasheet
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NXP Semiconductors
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P-channel enhancement mode MOS transistor - Configuration: single P-channel ; I<sub>D</sub> DC: 4.66 A; Q<sub>gd</sub> (typ): 1.83 nC; R<sub>DS(on)</sub>: 120@4.5V150@2.5V180@1.8V mOhm; V<sub>DS</sub>max: 16 V; Package: SOT96-1 (SO8); Container: Reel Dry Pack, SMD, 13"
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Original
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