BLF6G22LS-75,112 datasheet
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NXP Semiconductors
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Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 30.5 %; Frequency band: 2110 - 2170 GHz; Mode: W-CDMA / UMTS ; Output power: 17 W; Package material: SOT502B ; Power gain: 18.7 dB; Package: SOT502B (LDMOST); Container: Blister pack
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Original
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