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    BLF4G10LS-160 datasheet

    • NXP Semiconductors
    • UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 800 - 1000 GHz; Mode: CW / EDGE ; Output power: 25 W; Package material: SOT502B ; Power gain: 18 dB
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    BLF4G10LS-160 datasheet preview Download Datasheet

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