PBSS4350X,115 datasheet
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NXP Semiconductors
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50 V, 3 A NPN low VCEsat (BISS) transistor - fT min: 100 MHz; hFE min: 200 ; I<sub>C</sub> max: 3000 mA; Polarity: NPN ; V<sub>CEsat</sub> at I<sub>c</sub>=1 A, I<sub>b</sub>=50 mA: 170 mV; V<sub>CEsat</sub> at I<sub>c</sub>=2 A, I<sub>b</sub>=200 mA: 290 mV; V<sub>CEsat</sub> at I<sub>c</sub>=500 mA, I<sub>b</sub>=50 mA: <90 mV; VCEO max: 50 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd
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Original
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