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DSAUTAZ0012143.pdf
Manufacturer
NEC
Partial File Text
PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4564441,4564841,4564163 for Rev. E 64 M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD4564441, 4564841, 4564163 are high-speed 67,108
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Original
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User Tagged Keywords
UPD4564163G5-A10B
UPD4564163G5A10L9JF
uPD4564841G5-A10-9JF