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    BAS216 datasheet

    • NXP Semiconductors
    • BAS216 - High-speed switching diode - Cd max.: 1.5 pF; Configuration: single ; IF max: 250 mA; IFSM max: 4 A; IR max: 1000@VR=75V nA; IFRM: 500 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 75 V
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