PMV117EN,215 datasheet
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NXP Semiconductors
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micro TrenchMOS enhanced logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 2.5 A; Q<sub>gd</sub> (typ): 1.35 nC; R<sub>DS(on)</sub>: 117@10V 190@4.5V mOhm; V<sub>DS</sub>max: 30 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
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Original
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