PSMN006-20K,518 datasheet
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NXP Semiconductors
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TrenchMOS ultra low level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 32 A; Q<sub>gd</sub> (typ): 13.2 nC; R<sub>DS(on)</sub>: 5@4.5V5.7@2.5V8.2@1.8V mOhm; V<sub>DS</sub>max: 20 V; Package: SOT96-1 (SO8); Container: Reel Dry Pack, SMD, 13"
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Original
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