BUK6213-30A,118 datasheet
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NXP Semiconductors
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TrenchMOS Intermediate level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 55 A; Q<sub>gd</sub> (typ): 14 nC; R<sub>DS(on)</sub>: 13@10V20@4.5V mOhm; Thermal Resistance: 1.4 K/W; V<sub>DS</sub>max: 30 V; Package: SOT428 (DPAK); Container: Tape reel smd
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Original
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