BAS29,215 datasheet
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NXP Semiconductors
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General purpose controlled avalanche (double) diodes - C<sub>d</sub> max.: 35 pF; Configuration: single ; I<sub>F</sub> max: 250 mA; I<sub>FSM</sub> max: 10 A; I<sub>R</sub> max: 100@VR=90V nA; IFRM: 600 mA; t<sub>rr</sub> max: 50 ns; V<sub>F</sub>max: 1@IF=200mA mV; V<sub>R</sub> max: 90 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
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Original
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