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    BSH201,215 datasheet

    • NXP Semiconductors
    • P-channel enhancement mode MOS transistor - Configuration: Single P-channel ; I<sub>D</sub> DC: 0.3 A; Q<sub>gd</sub> (typ): 0.4 nC; R<sub>DS(on)</sub>: 2500@10V3750@4.5V mOhm; V<sub>DS</sub>max: 60 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
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