BAS86,115 datasheet
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NXP Semiconductors
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Schottky barrier diode - C<sub>d</sub> max.: 8@VR=1V pF; Configuration: single ; I<sub>F</sub> max: 200 mA; I<sub>FSM</sub> max: 5000 A; I<sub>R</sub> max: 5@VR=40VA; V<sub>F</sub>max: 450@IF=10mA mV; V<sub>R</sub> max: 50 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd
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Original
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