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    BLF6G20-110 datasheet

    • NXP Semiconductors
    • Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 31 %; Frequency band: 1800 - 2000 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT502A ; Power gain: 19 dB
    • Original
    • BLF6G20-110,112
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    BLF6G20-110 datasheet preview Download Datasheet

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