DSA00389591.pdf
by Toshiba

Partial File Text MICROWAVE POWER GaAs FET TIM1414-5-252 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=37.5 dBm at 13.75 GHz to 14.5 GHz HIGH GAIN G1dB=5.5 dB at 13.75 GHz to 14.5 GHz
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5252 F 5252 F 1 5252 f VOLTAGE TIM1414-5-252