IRF6644TR1PBF datasheet
by International Rectifier
A 100V Single N-Channel HEXFET Power MOSFET in a DirectFET MN package rated at 60 amperes optimized with low on resistance for applications such as active ORing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.; Similar to IRF6644 qualified for use with lead free soldering shipped in tape and reel 1000 pieces
The thermal resistance of the IRF6644TR1PBF is typically around 1.5°C/W (junction-to-case) and 62°C/W (junction-to-ambient) when mounted on a 1in² copper pad.
Yes, the IRF6644TR1PBF is suitable for high-frequency switching applications up to 1MHz, but it's essential to consider the device's switching losses, gate drive requirements, and layout considerations to ensure reliable operation.
To ensure reliability in high-temperature environments, it's crucial to follow proper thermal management practices, such as providing adequate heat sinking, using a thermal interface material, and keeping the junction temperature below the maximum rated value of 175°C.
The recommended gate drive voltage for the IRF6644TR1PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V. A higher gate drive voltage can help reduce switching losses and improve device performance.
Yes, the IRF6644TR1PBF can be used in a parallel configuration to increase current handling, but it's essential to ensure that the devices are properly matched, and the gate drive and layout are designed to minimize current imbalance and oscillations.
