BSS84,215 datasheet by NXP Semiconductors

Description P-channel enhancement mode vertical D-MOS transistor - Configuration: Single P-channel ; I<sub>D</sub> DC: 0.13 A; R<sub>DS(on)</sub>: 10000@10V mOhm; V<sub>DS</sub>max: 50 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
Datasheet Type Original
RoHS Yes
Lifecycle Transferred
ECCN EAR99
HTS Code 8541.21.00.95
Schedule B 8541.21.00.80
Price & Stock
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Equivalent Parts !
Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

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BSS84,215 datasheet preview

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BSS84,215 Price & Stock

Distributor	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics ()	15,028			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	6,800			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	2,986			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components ()	2,941			1 $0.07 10 $0.07 100 $0.07 1000 $0.04 10000 $0.03	Buy Now
	1,216			1 $0.25 10 $0.25 100 $0.07 1000 $0.05 10000 $0.05	Buy Now
ComSIT USA ()	3,371			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	2,567			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip 1 Exchange ()	117,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	3,614			1 - 10 - 100 - 1000 - 10000 -	Get Quote

BSS84,215 Frequently Asked Questions (FAQs)

The BSS84,215 can operate safely between -40°C to 150°C, but the recommended operating temperature range is -40°C to 125°C.
To ensure proper biasing, connect the gate to a voltage source through a resistor (e.g., 1 kΩ) and add a capacitor (e.g., 100 nF) between the gate and source to filter out noise.
The maximum continuous drain current rating for the BSS84,215 is 2.5 A, but it can handle up to 5 A for short pulses (≤ 10 ms).
Handle the device by the body, not the pins, and use an anti-static wrist strap or mat. Store the device in an anti-static bag or wrap it in anti-static material.
Yes, the BSS84,215 is suitable for high-frequency switching applications up to 100 kHz, but ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.