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    DSAISS00031268.pdf

    by International Rectifier
    • IRF7910PbF-1 HEXFET® Power MOSFET VDS 12 15 Qg (typical) ID (@TA = 25°C) nC 10 (@VGS = 4.5V) mΩ 17 RDS(on) max V A 1 8 D1 G1 2 7 D1 S2
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