DSA0096311.pdf
by Infineon Technologies

Partial File Text BSO207P H OptiMOS® P-Power-Transistor Product Summary Features V DS · dual P-Channel in SO8 · 150°C operating temperature V V GS=4.5 V 45.0 m V GS=2.5 V R DS(on),ma
Datasheet Type Original

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BSO207P BSO207P H IEC61249-2-21