DSAQ00293355.pdf

by Infineon Technologies

Partial File Text IPP030N10N3 G IPI030N10N3 G OptiMOSTM3 Power-Transistor Features · N-channel, normal level · Excellent gate charge x R DS(on) product (FOM) · Very low on-resistance R DS(on) · 175 °C operating
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030N10N IPP030N10N