DSAUTAZ0012147.pdf
by NEC

Partial File Text PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4504161 4M-bit Synchronous DRAM Description The µPD4504161 is a high-speed 4,194,304-bit synchronous dynamic random-access memory, organized
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PD4504161 UPD4504161 upd4504161g5