DSAASSA00011223.pdf
by International Rectifier

Partial File Text PD - 97735C IRFH8311PbF VDS Vgs max 30 ± 20 2.1 3.2 30 50 V V m nC A HEXFET® Power MOSFET RDS(on) max (@VGS = 10V) (@VGS = 4.5V) Qg typ. ID (@Tc(Bottom) = 25°C) i PQFN 5X6
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d020d IRFH8311 PQFN footprint