DSA00760336.pdf by Toshiba

Partial File Text MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM5964-12UL TECHNICAL DATA FEATURES n HIGH POWER P1dB=41.5dBm at 5.9GHz to 6.4GHz n HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz n BROAD BAND INTE
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