The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1056S8#TR Linear Technology LT1056 - Precision, High Speed, JFET Input Operational Amplifiers; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C
LT1057IS8#PBF Linear Technology LT1057 - Dual JFET Input Precision High Speed Op Amps; Package: SO; Pins: 8; Temperature Range: -40°C to 85°C
LT1122DS8#PBF Linear Technology LT1122 - Fast Settling, JFET Input Operational Amplifier; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C
LT1792ACN8#PBF Linear Technology LT1792 - Low Noise, Precision, JFET Input Op Amp; Package: PDIP; Pins: 8; Temperature Range: 0°C to 70°C
LT1792IS8#PBF Linear Technology LT1792 - Low Noise, Precision, JFET Input Op Amp; Package: SO; Pins: 8; Temperature Range: -40°C to 85°C
LT1793CS8#TRPBF Linear Technology LT1793 - Low Noise, Picoampere Bias Current, JFET Input Op Amp; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C

datasheet jfet J111 transistor Datasheets Context Search

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2007 - fairchild u1897

Abstract: U1897 application note jfet J111 transistor "N-Channel JFET" datasheet jfet J111 transistor J111 N-Channel JFET Switch U1897 fairchild
Text: U1897 N-Channel JFET Switch Features · This device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. · Sourced from Process 51. · See J111 for , 1 U1897 - N-Channel JFET Switch April 2008 Symbol TC = 25°C unless otherwise noted , www.fairchildsemi.com 2 U1897 - N-Channel JFET Switch Electrical Characteristics * The following are , Datasheet Identification Product Status Definition Advance Information Formative or In Design


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PDF U1897 U1897 fairchild u1897 application note jfet J111 transistor "N-Channel JFET" datasheet jfet J111 transistor J111 N-Channel JFET Switch U1897 fairchild
2001 - transistor J111

Abstract: MMBFJ111 J111 J112 J113 MMBFJ112 MMBFJ113 device code J111 113 SOT23
Text: Ambient Max Units J111 -113 625 5.0 125 *MMBFJ111-113 350 2.8 357 556 mW mW/°C , Corporation J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 MMBFJ111 MMBFJ112 MMBFJ113 J111 J112 J113 J111 /112/113/MMBFJ111/112/113, Rev A 5 (continued) Electrical Characteristics , 100 DS D Parameter Interactions r 10 J111 / J112 / J113 / MMBFJ111 / MMBFJ112 , °C 25°C 125°C 20 VGS(off) = - 1.1 V 10 - 55°C 25°C 125°C J111 / J112 / J113 / MMBFJ111


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PDF OT-23 transistor J111 MMBFJ111 J111 J112 J113 MMBFJ112 MMBFJ113 device code J111 113 SOT23
1997 - J113 equivalent

Abstract: transistor J111 J-113 MMBFJ113 MMBFJ112 MMBFJ111 J113 J112 CBVK741B019 transistor dg sot-23
Text: J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 MMBFJ111 MMBFJ112 MMBFJ113 J111 J112 J113 Max Units J111 -113 625 5.0 125 *MMBFJ111-113 350 2.8 357 556 mW mW/°C °C/W , (off) = - 2.0 V V GS = 0 V 100 DS D Parameter Interactions r 10 J111 / J112 , 1.6 V - 55°C 25°C 125°C 20 VGS(off) = - 1.1 V 10 - 55°C 25°C 125°C J111 / J112 , SOT-23 400 300 200 100 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150 J111


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PDF OT-23 J113 equivalent transistor J111 J-113 MMBFJ113 MMBFJ112 MMBFJ111 J113 J112 CBVK741B019 transistor dg sot-23
1997 - transistor SOT 23 fs 35

Abstract: J112 TO92
Text: J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 J111 J112 J113 MMBFJ111 MMBFJ112 MMBFJ113 , °C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient J111 -113 625 5.0 125 357 , " X 0.06." 1997 Fairchild Semiconductor Corporation J111 / J112 / J113 / MMBFJ111 / MMBFJ112 , V GS (OFF) _ 2 5 - GATE CUTOFF VOLTAGE (V) 5 10 g J111 / J112 / J113 / MMBFJ111 , 1 2 ID 5 10 20 - DRAIN CURRENT (mA) 50 100 J111 / J112 / J113 / MMBFJ111 / MMBFJ112


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PDF MMBFJ111 MMBFJ112 MMBFJ113 OT-23 transistor SOT 23 fs 35 J112 TO92
2001 - transistor J111

Abstract: 4-12-612 MMBFJ111 MMBFJ112 MMBFJ113 J111 J112 J113
Text: Ambient Max Units J111 -113 625 5.0 125 *MMBFJ111-113 350 2.8 357 556 mW mW/°C , Corporation J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 MMBFJ111 MMBFJ112 MMBFJ113 J111 J112 J113 J111 /112/113/MMBFJ111/112/113, Rev A 5 (continued) Electrical Characteristics , 100 DS D Parameter Interactions r 10 J111 / J112 / J113 / MMBFJ111 / MMBFJ112 , Resistance vs Drain Current 100 50 20 10 10 1 2 5 10 20 50 J111 / J112


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PDF OT-23 transistor J111 4-12-612 MMBFJ111 MMBFJ112 MMBFJ113 J111 J112 J113
2013 - Not Available

Abstract: No abstract text available
Text: (+32-10-489214)Nov. 13 CHT-ATLAS-Dual Channel Power Transistor Driver DATASHEET (Last Modification Date , (+32-10-489214)Nov. 13 CHT-ATLAS-Dual Channel Power Transistor Driver DATASHEET (Last Modification Date , Power Transistor Driver DATASHEET (Last Modification Date) Logic Table INA(B) 0 1 X X , CHT-ATLAS-Dual Channel Power Transistor Driver DATASHEET (Last Modification Date) Absolute Maximum Ratings , Power Transistor Driver DATASHEET (Last Modification Date) Electrical Characteristics Unless


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PDF 12-Nov-13 DS-100781
Lovoltech

Abstract: POWERJFET LS1105 jfet transistor jfet application LVT103 lovoltech no diode LVTS1101S LVTS101N JFET APPLICATIONS
Text: PWRLITE-LS1105N Enhanced N-Channel Power JFET Transistor , Trench Technology Trench Power JFET , Modules VRM Modules Description The Power JFET transistor from Lovoltech is a device that presents a , an "on" state. For a High Side LVTx101 JFET transistor , this gate current will be as high as 100mA , minimizes the required dead time. The transistor "No Body Diode" provides a very low associated parasitic , S Top View N ­ Channel Power JFET Pin Definitions Pin Number 4 1, 2, 3 5, 6, 7, 8


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PDF PWRLITE-LS1105N LS1105N Lovoltech POWERJFET LS1105 jfet transistor jfet application LVT103 lovoltech no diode LVTS1101S LVTS101N JFET APPLICATIONS
jfet transistor

Abstract: Lovoltech jfet application LVTS1101S POWER JFET LVTS101N LVTS101 PN channel MOSFET 10A Marking 654 Diode and Transistor 1980
Text: www.Lovoltech.com PWRLITE-LS1101S Enhanced N-Channel Power JFET Transistor , Trench Technology Trench Power JFET with low threshold voltage Device fully "ON" with Vgs = 0.7V Optimum for "Low Side , supplies Brick Modules VRM Modules Description The Power JFET transistor from Lovoltech is a device , /turn-off, which minimizes the required dead time. The transistor "No Body Diode" provides a very low , 4 D D D D Top View G S N ­ Channel Power JFET Pin Definitions Pin Number 4 1, 2


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PDF PWRLITE-LS1101S jfet transistor Lovoltech jfet application LVTS1101S POWER JFET LVTS101N LVTS101 PN channel MOSFET 10A Marking 654 Diode and Transistor 1980
jfet transistor

Abstract: Lovoltech LVTS101 LVTS101N LVTS1101S LS1105 PN channel MOSFET 10A
Text: www.Lovoltech.com PWRLITE-LS1105S Enhanced N-Channel Power JFET Transistor , Trench Technology Trench Power JFET with low threshold voltage Device fully "ON" with Vgs = 0.7V Optimum for "Low Side , supplies Brick Modules VRM Modules Description The Power JFET transistor from Lovoltech is a device , /turn-off, which minimizes the required dead time. The transistor "No Body Diode" provides a very low , D D D Top View G S N ­ Channel Power JFET Pin Definitions Pin Number 4 1, 2, 3 5, 6


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PDF PWRLITE-LS1105S jfet transistor Lovoltech LVTS101 LVTS101N LVTS1101S LS1105 PN channel MOSFET 10A
lovoltech

Abstract: jfet transistor vertical JFET LS203N S203N TRANSISTOR a 1980
Text: www.Lovoltech.com PWRLITE-LS203N High Performance N-Ch Vertical Power JFET Transistor "No Body Diode" transistor replaces 2 MOSFETs devices with 1 JFET Low Rdson to improve efficiencies Low drop-out for longer time operations per charge Very low leakage in off conditions Trench Power JFET with , chargers 8 pin SOIC package; Available in other packages and die form The JFET transistor from , transistor in battery related applications such as notebooks, cellular telephones and other battery operated


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PDF PWRLITE-LS203N lovoltech jfet transistor vertical JFET LS203N S203N TRANSISTOR a 1980
2011 - CHT-TIT9570A

Abstract: sic normally on fet
Text: . 11 CHT-THEMIS-Power Transistor Driver Controller DATASHEET Electrical Characteristics Unless , . 11 CHT-THEMIS-Power Transistor Driver Controller DATASHEET Parameter Condition Min Typ external , . 11 CHT-THEMIS-Power Transistor Driver Controller DATASHEET Control Logic Timing Diagram Main , (+32-10-489214) Apr. 11 CHT-THEMIS-Power Transistor Driver Controller DATASHEET 14.0 Load Regulation [mV/mA , Controller DATASHEET Application diagrams Driving Normally ON JFET Driving Normally OFF JFET PUBLIC


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PDF 22-Apr-11 DS-100782 CHT-TIT9570A sic normally on fet
lovoltech

Abstract: jfet transistor vertical JFET LD1101
Text: www.Lovoltech.com PWRLITE LD1101S High Performance N-Ch Vertical Power JFET Transistor with , supplies Brick Modules VRM Modules The Power JFET transistor from Lovoltech is a device that presents , minimizes the required dead time. The transistor "No Body Diode" provides a very low associated parasitic , Power JFET with low threshold voltage Vth. Device fully "ON" with Vgs = 0.7V Optimum for "Low Side , DPAK Pin Assignments D G D G S S N ­ Channel Power JFET with Schottky Pin Definitions


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PDF LD1101S lovoltech jfet transistor vertical JFET LD1101
lovoltech

Abstract: jfet transistor TO252-DPAK package LD1105N TO252-DPAK LD1105 j-fet transistor marking A1 TRANSISTOR lovoltech no diode
Text: PWRLITE LD1105N High Performance N-Ch Vertical Power JFET Transistor Description Trench Power JFET with low threshold voltage Vth. Device fully "ON" with Vgs = 0.7V Optimum for "High Side" Buck , Modules VRM Modules The Power JFET transistor from Lovoltech is a device that presents a Low Rdson , time. The transistor "No Body Diode" provides a very low associated parasitic capacitance Cds. A , Assignments D G D G S S N ­ Channel Power JFET Pin Definitions Pin Number 1 2 3 Pin


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PDF LD1105N lovoltech jfet transistor TO252-DPAK package LD1105N TO252-DPAK LD1105 j-fet transistor marking A1 TRANSISTOR lovoltech no diode
jfet transistor

Abstract: lovoltech LD1006N LVTD1006N lovoltech no diode
Text: www.Lovoltech.com PWRLITE LD1006N High Performance N-Ch Vertical Power JFET Transistor , power supplies Brick Modules VRM Modules The Power JFET transistor from Lovoltech is a device that , minimizes the required dead time. The transistor "No Body Diode" provides a very low associated parasitic , G D G S S N ­ Channel Power JFET Pin Definitions Pin Number 1 2 3 Pin Name Gate Drain Source Pin Function Description Gate. Transistor Gate Drain. Transistor Drain Source


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PDF LD1006N jfet transistor lovoltech LD1006N LVTD1006N lovoltech no diode
Lovoltech

Abstract: pn diode LVTD103D LVTS103
Text: www.Lovoltech.com PWRLITE LVTD103D High Performance N-Ch Vertical Power JFET Transistor with Diode Trench Power JFET with low threshold voltage Vth. Device fully "ON" with Vgs = 0.7V Optimum for , Brick Modules VRM Modules Description The Power JFET transistor from Lovoltech is a device that , for high speed switching No "Body Diode" in JFET ; extremely low Cds Added PN Diode on same silicon , minimizes the required dead time. The transistor "No Body Diode" provides a very low associated parasitic


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PDF LVTD103D Lovoltech pn diode LVTD103D LVTS103
2011 - IJW120R070T1

Abstract: IJW120R silicon carbide
Text: . 19 Final Datasheet 3 Rev. 2.0, <2013-09-11> Silicon Carbide JFET IJW120R070T1 , , external Final Datasheet 5 Rev. 2.0, <2013-09-11> Silicon Carbide JFET IJW120R070T1 , / m³…) Final Datasheet 6 Rev. 2.0, <2013-09-11> Silicon Carbide JFET IJW120R070T1 , leakage current Final Datasheet 11 Rev. 2.0, <2013-09-11> Silicon Carbide JFET IJW120R070T1 , SiC - JF ET Silicon Carbide- Junction Field Effect Transistor Cool Si C ™ 1200 V CoolSiCâ


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PDF IJW120R070T1 IJW120R070T1 IJW120R silicon carbide
2012 - MMBFJ111

Abstract: J111 6R SOT23 J112 TO92
Text: J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 - N-Channel Switch August 2012 J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 N-Channel Switch , stabilized amplifiers. · Sourced from Process 51. · Source & Drain are interchangeable. J111 J112 J113 , Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max. J111 -113 625 5.0 125 357 556 , ". © 2012 Fairchild Semiconductor Corporation J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338


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PDF MMBFJ111 MMBFJ112 SB51338 MMBFJ113 J111 6R SOT23 J112 TO92
2011 - Not Available

Abstract: No abstract text available
Text: . 19 Final Datasheet 3 Rev. 2.0, <2013-09-11> Silicon Carbide JFET IJW120R100T1 , Final Datasheet 5 Rev. 2.0, <2013-09-11> Silicon Carbide JFET IJW120R100T1 Application , during production Final Datasheet 7 Rev. 2.0, <2013-09-11> Silicon Carbide JFET IJW120R100T1 , see application note Final Datasheet 8 Rev. 2.0, <2013-09-11> Silicon Carbide JFET , Final Datasheet 11 Rev. 2.0, <2013-09-11> Silicon Carbide JFET IJW120R100T1 Electrical


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PDF IJW120R100T1
2012 - Not Available

Abstract: No abstract text available
Text: J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 N-Channel Switch Features , MMBFJ112 MMBFJ112_SB51338 MMBFJ113 J111 J112 J113 G S G S TO-92 D SOT-23 Mark , noted Parameter Max. J111 -113 *MMBFJ111-113 Total Device Dissipation Derate above 25ï , mounted on FR-4 PCB 1.6" X 1.6" X 0.06". © 2012 Fairchild Semiconductor Corporation J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 Rev. B0 1 www.fairchildsemi.com J111


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PDF MMBFJ111 MMBFJ112 SB51338 MMBFJ113 MMBFJ111 MMBFJ112 SB51338
lovoltech

Abstract: jfet transistor LVTB103N LVTS103 Diode and Transistor 1980
Text: www.Lovoltech.com PWRLITE LVTB103N High Performance N-Ch Vertical Power JFET Transistor "No , Step-down power supplies Brick Modules VRM Modules Description The Power JFET transistor from , turn-on/turn-off, which minimizes the required dead time. The transistor "No Body Diode" provides a very , be a better solution. D2PAK Pin Assignments D G D G S S N ­ C hannel P ow er JFET , Gate. Transistor Gate Drain. Transistor Drain Source. Transistor Source VDS (V) 25V Product


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PDF LVTB103N lovoltech jfet transistor LVTB103N LVTS103 Diode and Transistor 1980
2010 - VNC2

Abstract: No abstract text available
Text: Future Technology Devices International Ltd. V2DIP2-32 VNC2-32Q Development Module Datasheet , International Limited Document Reference No.: FT_000164 V2DIP2-32 VNCL2-32Q Development Module Datasheet , Limited 1 Document Reference No.: FT_000164 V2DIP2-32 VNCL2-32Q Development Module Datasheet , _000164 V2DIP2-32 VNCL2-32Q Development Module Datasheet Version 1.0 Clearance No.: FTDI# 151 ` 2 , Module Datasheet Version 1.0 Clearance No.: FTDI# 151 ` 3 Pin Out and Signal Description 3.1


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PDF V2DIP2-32 VNC2-32Q V2DIP2-32 VNCL2-32Q VNC2
lovoltech

Abstract: LD1006S LVTD1006S LVTD1006SB marking symbol ER transistor
Text: www.Lovoltech.com PWRLITE LD1006S High Performance N-Ch Vertical Power JFET Transistor with , Step-down power supplies Brick Modules VRM Modules The Power JFET transistor from Lovoltech is a device , /turn-off, which minimizes the required dead time. The transistor "No Body Diode" provides a very low , Description Gate. Transistor Gate Drain. Transistor Drain Source. Transistor Source VDS (V) 25V , 0.95-500NoTi Advanced Information Description Trench Power JFET with low threshold voltage Vth


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PDF LD1006S lovoltech LD1006S LVTD1006S LVTD1006SB marking symbol ER transistor
2010 - V2DIP2-32

Abstract: usb flash drive circuit diagram Vdip1 VNC2-32
Text: Future Technology Devices International Ltd. V2DIP2-32 VNC2-32Q Development Module Datasheet , International Limited Document Reference No.: FT_000164 V2DIP2-32 VNCL2-32Q Development Module Datasheet , Limited 1 Document Reference No.: FT_000164 V2DIP2-32 VNCL2-32Q Development Module Datasheet , _000164 V2DIP2-32 VNCL2-32Q Development Module Datasheet Version 1.01 Clearance No.: FTDI# 151 ` 2 , Module Datasheet Version 1.01 Clearance No.: FTDI# 151 ` 3 Pin Out and Signal Description


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PDF V2DIP2-32 VNC2-32Q V2DIP2-32 VNCL2-32Q usb flash drive circuit diagram Vdip1 VNC2-32
2010 - VNC2-32

Abstract: V2DIP2-32 VNCL2-32Q
Text: Future Technology Devices International Ltd. V2DIP2-32 VNC2-32Q Development Module Datasheet , Reference No.: FT_000164 V2DIP2-32 VNCL2-32Q Development Module Datasheet Version 1.0 Clearance No.: FTDI , _000164 V2DIP2-32 VNCL2-32Q Development Module Datasheet Version 1.0 Clearance No.: FTDI# 151 ` Table of , _000164 V2DIP2-32 VNCL2-32Q Development Module Datasheet Version 1.0 Clearance No.: FTDI# 151 ` 2 , Limited 3 Document Reference No.: FT_000164 V2DIP2-32 VNCL2-32Q Development Module Datasheet


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PDF V2DIP2-32 VNC2-32Q VNCL2-32Q 895-V2DIP2-32 V2DIP2-32 VNC2-32
2010 - V2DIP1-48

Abstract: Vdip1 vnc2-48l1a usb flash drive circuit diagram vinculum VNC2-48 usb male connector pcb mounted Vinculum II
Text: Future Technology Devices International Ltd. V2DIP1-48 VNC2-48 Development Module Datasheet , International Limited Document Reference No.: FT_000236 V2DIP1-48 VNC2-48 Development Module Datasheet , _000236 V2DIP1-48 VNC2-48 Development Module Datasheet Version 1.01 Clearance No.: FTDI# 153 ` Table of , No.: FT_000236 V2DIP1-48 VNC2-48 Development Module Datasheet Version 1.01 Clearance No.: FTDI# 153 , -48 VNC2-48 Development Module Datasheet Version 1.01 Clearance No.: FTDI# 153 ` 3 Pin Out and


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PDF V2DIP1-48 VNC2-48 V2DIP1-48 Vdip1 vnc2-48l1a usb flash drive circuit diagram vinculum usb male connector pcb mounted Vinculum II
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