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LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

d 317 transistor Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
8060 transistor

Abstract: 104 csk 8060-1G12 M8058-1G18 8060-1G6 transistor 373 d 317 transistor 1G22 1g45 transistor c 373
Text: 1654741 Specialty Sockets Revised 1-04 Transistor Sockets 8058 & 8060 Series 8060-1G11 , 1654741 Specialty Sockets Revised 1-04 Transistor Sockets 8058 & 8060 Series PART NUMBER , B C D E* F Max. M8058-45G1 1 3 .200 .200 .265 .373 .410 .160 , -1G23 Transistor Lead Length Turret M8058-1G29 Mounting Hole Printed Circuit B _ .125/.155 , .410 .347 .550 8058-1G24 4 4 .200 .200 .270 .373 .410 . 317 .550


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PDF 8060-1G11 8060-1G6 MIL-S-83502/2 MIL-S-83502/5. 8060 transistor 104 csk 8060-1G12 M8058-1G18 8060-1G6 transistor 373 d 317 transistor 1G22 1g45 transistor c 373
transistor 373

Abstract: 8060 transistor
Text: Catalog 1307612 J & IV IF * Specialty Sockets Revised 7-01 Transistor Sockets 8058 & , Sockets Revised 7-01 Transistor Sockets 8058 & 8060 Series PART NUMBER / STANDARD CONFIGURATIONS Part Number Terminal Style Figure No. of Contacts Pin Circle A B C D E , .410 .315 .1567.218 N/A Polarization Figure N .544 M8058-1G23 Transistor Lead , .550 8058-1G24 4 4 .200 .200 .270 .373 .410 . 317 .550 Printed Circuit


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PDF 8060-1G11 8060-1G6 MIL-S-83502/2 M1L-S-83502/5. transistor 373 8060 transistor
START SWITCH idec

Abstract: GT3D-4EAF20 GT3A-2EAF20 star delta using NO NC GT3D-4AD24 DPDT transistor series 511 spdt relay 12v dc LR83814 GT3W-A11 IDEC GT3A-4EAD24
Text: ) 317 -IDEC Timers GT3A Series Part Number List Part Numbers: GT3A-1, -2, -3 Mode Of , B: Interval 1 C: Cycle 1 D : Cycle 3 AF20: 100 to 240V AC (50/60Hz) D12: 12V DC AD24: 24V AC , Operation Rated Voltage Code A: ON-Delay 2 B: Cycle 2 C: Signal ON/OFF-Delay 1 D : Signal OFF-Delay , : One-Shot ON-Delay C: One-Shot 2 D : Signal ON/OFF-Delay 3 4. 5. 6. 7. 8. Output Contact , -4AF20 GT3A-6EAD24 G Timers A: Interval 2 B: One-Shot Cycle C: Signal ON/OFF-Delay 2 D : Signal


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PDF E55996 50/60Hz 50/60Hz AC/250V AC/21 262-IDEC 317-IDEC START SWITCH idec GT3D-4EAF20 GT3A-2EAF20 star delta using NO NC GT3D-4AD24 DPDT transistor series 511 spdt relay 12v dc LR83814 GT3W-A11 IDEC GT3A-4EAD24
d 317 transistor

Abstract: ti 317
Text: < 10 E 55/150/56 BSP 317 Unit °C K/W 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 , 09.96 SIEMENS Power dissipation Drain current ' d = /(7 a) parameter: VQ S > -10 V BSP 317 s , characteristics lü = f W ds) BSP 317 Typ. drain-source on-resistance 'DS (on) = / ( / D ) parameter , , / D = -1 mA BSP 317 ñ DS (on) = f i 1j) ^G S (th ) = /(7 j) -60 -20 20 60 100 , Drain-source breakdown voltage V '( B R ) D S S = / ( 7 j) BSP 317 Safe operating area lo=HVos


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PDF OT-223 Q67000-S94 E6327 OT-223 GPS05560 d 317 transistor ti 317
1996 - d 317 transistor

Abstract: E6327 Q67000-S94
Text: BSP 317 SIPMOS ® Small-Signal Transistor · P channel · Enhancement mode · Logic Level · VGS(th) = -0.8.-2.0 V Pin 1 G Type VDS ID RDS(on) Package BSP 317 -200 V -0.37 A 6 Ordering Code Q67000-S94 D Pin 3 Pin 4 S D SOT-223 Type BSP 317 , Group Unit W 1.8 1 Sep-12-1996 BSP 317 Maximum Ratings Parameter Symbol , IEC climatic category, DIN IEC 68-1 55 / 150 / 56 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5


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PDF Q67000-S94 OT-223 E6327 Sep-12-1996 d 317 transistor E6327 Q67000-S94
E6327

Abstract: Q67000-S94 d 317 transistor
Text: BSP 317 SIPMOS ® Small-Signal Transistor · P channel · Enhancement mode · Logic Level · VGS(th) = -0.8.-2.0 V Pin 1 G Type VDS ID RDS(on) Package BSP 317 -200 V -0.37 A 6 Ordering Code Q67000-S94 D Pin 3 Pin 4 S D SOT-223 Type BSP 317 , Data Sheet Unit 1.8 1 05.99 BSP 317 Maximum Ratings Parameter Symbol Chip or , , DIN IEC 68-1 55 / 150 / 56 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper


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PDF Q67000-S94 OT-223 E6327 E6327 Q67000-S94 d 317 transistor
1999 - Not Available

Abstract: No abstract text available
Text: BSP 317 SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8.-2.0 V Pin 1 G Type VDS ID RDS(on) Package BSP 317 -200 V -0.37 A 6Ω Ordering Code Q67000-S94 D Pin 3 Pin 4 S D SOT-223 Type BSP 317 Pin 2 Marking Tape and Reel Information E6327 Maximum Ratings Parameter , W Ptot TA = 25 ˚C Data Sheet Unit 1.8 1 05.99 BSP 317 Maximum Ratings


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PDF Q67000-S94 OT-223 E6327
transistor Kd 505

Abstract: k534 TRANSISTOR D410 transistor DA 218 b058 8060 transistor 1G22 805S-IG32 8060-1G6 1G5.1
Text: LTR O CD) A D - SEE Transistor Sockets 8058 & 8060 Series PART NUMBER , TH IS DRAW ING IS A C O N TR O LLE D DO C U M EN T. REVISIONS T ^ st -DATE d e s c r ip t io n DWN APVD p 0 0 L ECO - 28N0V2006 05 - 0 Ö9 , L' D · Two-piece socket terminal - four fingered inner contact and machined outer sleeve · Low , MIL-STD -1344, Method 1003 I lo ThomasêBetts Q u a lity & in n o vatio n Fro m N a m e B ra n d Pro


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PDF 28N0V2006 8060-1G11 8060-1G6 MIL-S-S3502/2 MIL-S-83502/5. transistor Kd 505 k534 TRANSISTOR D410 transistor DA 218 b058 8060 transistor 1G22 805S-IG32 8060-1G6 1G5.1
smd transistor m7

Abstract: No abstract text available
Text: BSP 317 Infineon (•eh n o l o g I«s SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS(th) = "0.8.-2.0 V ffDS(on) V) sP Type BSP 317 -200 V Type BSP 317 Ordering Code Q67000-S94 -0.37 A Package 6O Marking SOT , category, DIN IEC 68-1 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for , VGS = 0 V, / D = -0.25 mA, 7] = 25 "C Gate threshold voltage V ^(BR)DSS . -200 ^GS(th


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PDF Q67000-S94 OT-223 E6327 S35bG5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T smd transistor m7
LU380A

Abstract: full subtractor circuit using nand gates LU380 full subtractor circuit using nor gates LU321A LU322B LU370A LU306 LU333A utilogic
Text: .2 305,306 .3 333, 314, 317 , 370 and , Measured at 50% points FAN-IN EXPANSION OF 317 33 See text under "NOR GATES" 321,322 CHARACTERISTIC , , 314, 317 , 370 and 380 CHARACTERISTIC MEASUREMENT MIN. TYP. MAX. UNITS CONDITIONS NOISE IMMUNITY , (314, 317 ,370, 380) VoUT 3.8 V Iqut = -2 mA, V,N = +1.4V (333 only) VOUT 3.8 V Iout=-2 mA, V|N = +2.7V "0" OUTPUT VOLTAGE (314, 317 ,370,380) VoUT 0.6 V IQUT = 12.5 mA,V,N=+2.7V (333 only) VoUT â


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PDF 380ign LU380A full subtractor circuit using nand gates LU380 full subtractor circuit using nor gates LU321A LU322B LU370A LU306 LU333A utilogic
RCA-41024

Abstract: RF NPN POWER TRANSISTOR 2 WATT 2 GHZ 41024 transistor C4 016 rca 0190 transistor 4-1024
Text: S turns. No. 28 wire. 0.125 in ¡ 3.17 mm) dia. x 0.5 in. (12.7 mm) long R: 0-50 ohms Transistor , Transistor High-Gain Device for Class B- or Cooperation in UHF Circuits Features: ■1-watt output min , -41024 is an epitaxial silicon n-p-n planar transistor of the overlay-emitter-electrode construction. It is , A TRANSISTOR DISSIPATION: PT At case temperatures up to 25 , , 0.125 in. ( 3.17 mm) ID, No. 26 wire 0.300 in. (7.62 mml 0.25 in. (6.35 mm) Or equivalent Fig. 5- RF


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PDF RCA-41024 RF NPN POWER TRANSISTOR 2 WATT 2 GHZ 41024 transistor C4 016 rca 0190 transistor 4-1024
NPN Transistor 10A 24V

Abstract: IDEC 120v in 24v 10A OUT power converter fl1c-h12rce m08d FL1B-M08B2R2 IEC-61131 FL1B-CL1C12 IEC60068-2-30 Q13-Q16
Text: software or cables required. USA: (800) 262-IDEC or (408) 747-0550, Canada: (888) 317 -IDEC IDEC , Transistor Source Output Yes - Relay Output Yes PNP Expansion Module Part Number Part No , Signal DC input Relay output 8 (4 in/4 out) 24V DC DC input Transistor output 8 (4 , www.idec.com USA: (800) 262-IDEC or (408) 747-0550, Canada: (888) 317 -IDEC H-3 IDEC SmartRelay , (Example) Shift Down USA: (800) 262-IDEC or (408) 747-0550, Canada: (888) 317 -IDEC IDEC


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PDF Windows95/98/ME/NT/2000/XP 266MHz 128MB 262-IDEC 317-IDEC NPN Transistor 10A 24V IDEC 120v in 24v 10A OUT power converter fl1c-h12rce m08d FL1B-M08B2R2 IEC-61131 FL1B-CL1C12 IEC60068-2-30 Q13-Q16
TSD40N50DV

Abstract: aval d 317 transistor
Text: RüS(on) 0.12 £2 Id 40 A TY P E TS D 40N 50D F/ D V V dss 500 V . POWER MOS TRANSISTOR MODULE , . max 31.7 8.2 4.3 15.1 30.3 38.2 12.2 9.1 12.8 25.4 2.05 A B C D E F G H L M N P Q 31.5 7.8 4.1 14.9 , B Q E D m 7e ia,i237_Qa3as'-iti ? SGS-THOMSON üLiO TTiO iöO i s g TSD40N50DF , Id Id Idm (*) Plot P a ra m e te r D rain-S ource V oltage (V qs = 0) D rain-G ate V oltage (R gs = 20 k n ) G ate-S ource V oltage D rain C urrent (co ntinuo us) at T c = 25 °C Drain C urrent


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PDF TSD40N50DF TSD40N50DV O-240) PC-029« TSD40N50DV aval d 317 transistor
transistor c1237

Abstract: TSD250N05V
Text: DIMENSIONS mm min. A B C D E F G H L M N 31.5 6,2 0.75 14.9 30.1 38 4 20.3 8.9 22.4 25.2 1.95 4 max 31.7 6.4 , TRANSISTOR MODULE TENTATIVE DATA RDS(on) Id TYPE TSD250N05F/V V dss 50 V 0.004 n 250 A , M 1 i SC04 S90 Jt e l ` ABSOLUTE MAXIMUM RATINGS Sym bol V ds V dqr V gs Id Id I d , width limited by safe operating area July 1990 3QE » 7C J2E J 23 7 D Q 3 G 7Ö 0 , TRANSISTOR pin 2: Base pin 4: Emitter sensing Torque: Mounting 1.3 ± 0.2 N · m (max) Weight: Package 25.5


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PDF c1237 Q03QLi02 TSD250N05F TSD250N05V TSD250N05F/V O-240) PC-029« transistor c1237 TSD250N05V
Not Available

Abstract: No abstract text available
Text: 3 DE D 7^2^237 003QSC 12 T ' F I 6 s S C S TH O M S O N ¡[LBgïïËMDes - , MODE POWER MOS TRANSISTOR MODULE TENTATIVE DATA RDS(on) Id 1000 V 0.5 n 20 A . . . , MAXIMUM RATINGS Sym bol V ds V dgr V gs Id Id I d m (*) Parameter Drain-Source Voltage (V gs = 0 , J2E J237 D Q 3 G 7 Ö 0 ä PACKAGES T T h ISOTOP Fast-on version sales types with the suffix F MECHANICAL DATA DIMENSIONS mm min. A B C D E F G H L M N 31.5 6,2 0.75 14.9 30.1 38 4 20.3


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PDF 003QSC TSD20N1 TSD20N100V TSD20N100F/V O-240) PC-029«
2N5090

Abstract: ta7146 equivalent transistor n 4212 RCA-2N5090 RCA TO60 TRANSISTORS 3431J 9ZSS-3620R2 RCA 813
Text: File No. 270 - DGGB// D RF Power Transistors Solid State Division 2N5090 High-Power Silicon N-P-N Overlay Transistor High-Gain Type for Class A, B, or C Operation in VHF/UHF Circuits Features , from stud RCA-2N5090* is an epitaxial silicon n-p-n planar transistor employing the RCA-developed , . IC 0.4 A ♦continuous base current_ lb 0.4 a ♦ transistor dissipation . pt At case , mm) ID, 1/8 in. ( 3.17 mm) long L2: 3 turns No.16 wire, % in. (6.35 mm) ID, 3/8 in. (9.52 mm) long


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PDF 2N5090 RCA-2N5090* 92CS-I80I9 2N5090 ta7146 equivalent transistor n 4212 RCA-2N5090 RCA TO60 TRANSISTORS 3431J 9ZSS-3620R2 RCA 813
2007 - CAPACITOR 100UF 20V THROUGH HOLE

Abstract: ZXRE125 ZRC250 AN51 FZT851 470R transistor zrc250 BAS216 BAV99 OPA365
Text: reference U2 generates a base-emitter voltage on transistor Q2, switching it on. This in turn generates a base-emitter voltage on Q1, the pass transistor , allowing the output to rise sharply until enough voltage is , Discrete Solution 317 with decoupled adjust pin Figure 2 Output Noise FFT comparing Zetex Discrete solution with 317 type regulator Clearly the output noise performance of the discrete regulator is significantly better than the IC regulator - the ubiquitous 317 . Both circuits were operated in a similar


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PDF D-81541 CAPACITOR 100UF 20V THROUGH HOLE ZXRE125 ZRC250 AN51 FZT851 470R transistor zrc250 BAS216 BAV99 OPA365
schematic diagram UPS

Abstract: TSD180N10V k 815 MOSFET smps&ups TSD180N10F
Text: 3QE D ■TTSTSa? OGBQS^â □ ■SGS-THOMSON TSD180N1 OF LlimrifS©«! TSD180N1OV S-THOMSON N . CHANNEL ENHANCEMENT MODE _POWER MOS TRANSISTOR MODULE TENTATIVE DATA TYPE Vdss RdS(oii) Id , : Basel pin 4: Base 2 TRANSISTOR pin 1: Emitter pin 2: Base pin 3: Collector pin 4: Emitter sensing , for the 3 pin version (4th pin missing) DIMENSIONS mm Inches min. max min. max A 31.5 31.7 1.240 1.248 B 6.2 6.4 0.244 0.252 C 0.75 0.85 0.029 0.033 D 14.9 15.1 0.586 0.590 E 30.1 30.3 1.185


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PDF TSD180N1 TSD180N1OV TSD180N10F/V C045S0 T-91-20 O-240) schematic diagram UPS TSD180N10V k 815 MOSFET smps&ups TSD180N10F
2002 - XC6382F501MR

Abstract: XC6382 XC6382A XC6382B XC6382C XC6382D XC6382E XC6382F sot-89 marking E5
Text: switching transistor D Stand-by capability. (5-pin) External switching transistor E Separated , (accuracy: ±15%) Every built-in switching transistor type enables a step-up circuit to be configured using only three external components ; a coil, a diode, and a capacitor. External transistor versions are , ~10V Both built-in and external transistor types include 5-pin and 3-pin packages, which are , ratio : 75%(±5%) Both switching transistor built-in and external types are available. Five-lead


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PDF XC6382 100kHz 47FTantalum XC6382A501 XC6382A301 XC6382F501MR XC6382A XC6382B XC6382C XC6382D XC6382E XC6382F sot-89 marking E5
transistor j237

Abstract: d 317 transistor
Text: n N _ CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR MODULE ADVANCE DATA TYPE IR , ABSOLUTE MAXIMUM RATINGS S ym bol V ds V dgr V gs Id Id I dm (») Ptot P a ra m e te r D rain-S ource V oltag e (V gs = 0) D rain-G ate V oltage (R gs = 20 k£2) G ate-S ource V oltage D rain C urrent (continuous) at T c = 25 °C D rain C urrent (continuous) at T c = 100 °C D rain C urrent (pulsed) T o tal D issipation at Tc = 25 °C D erating Factor Tstg T) Viso S torage Tem perature M ax. O perating Jun ction T e m


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PDF SC04720 O-240) PC-029« transistor j237 d 317 transistor
Not Available

Abstract: No abstract text available
Text: 12.5 dB @ 2 GHz ■P o u t = 31.7 dBm MIN. (§> 2.0 GHz PIN CONNECTION DESCRIPTION The MSC80197 is a hermetically sealed NPN power transistor featuring a unique matrix structure. This device , = 2.0 GHz f = 2.0 GHz Pout = 31.7 dBm f = 1 MHz V cb = 28 V C ob * Note: APouT = , 1237 GDbT647 47T 12C Typ. Max. 6.0 Pout = 31.7 dBm AGp* Unit Min. 7.0 â , 0 .3 5 to 3 .5 of J o h a n s o n # 5 8 0 0 C 5 , 0.1 1i f D isk C a p a c ito r Cs C t F e a d lh


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PDF MSC80197 35Q2\C
Not Available

Abstract: No abstract text available
Text: 3DE D B TESTES? D Q 3 D 7S D 2 ._ ^ 1 - A 7 I [»^©[¡ , MODE - POWER MOS TRANSISTOR MODULE ADVANCE DATA V dss RDS(on) Id TYPE IR FK6H , SCHEMATIC DIAGRAM 1 r r n ABSOLUTE MAXIMUM RATINGS S ym bol V ds P a ra m e te r D rain-S ource V oltage (Ves = 0) D rain -G ate V oltage (R gs = 20 k il) G ate-S ource V oltage Drain C urrent (continuous) at T c = 25 °C Drain C urrent (continuous) at T c = 100 °C Drain C urrent (pulsed) T o ta l D


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PDF IRFK6H350 T-91-20 O-240) PC-029«
transistor motorola 351

Abstract: BD136 MMBT2222ALT1 MRF858 MRF858S PG1112 898E-03
Text: MOTOROLA Order this document by MRF858/ D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF858 MRF858S NPN Silicon RF Power Transistor Designed for 24 Volt UHF large­signal, common , range of 800 ­ 960 MHz. CLASS A 800 ­ 960 MHz 3.6 W (CW), 24 V NPN SILICON RF POWER TRANSISTOR , , NPN Transistor BD136, PNP Transistor C14 0.685 TL3 B1, B2 C1 C2, C5 C3, C6 C4, C7 C8 , DIM A B C D E F H J K L N Q K F D 2 PL 0.38 (0.015) M B 0.38 (0.015) T A M


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PDF MRF858/D MRF858 MRF858S MRF858 MRF858/D* transistor motorola 351 BD136 MMBT2222ALT1 MRF858S PG1112 898E-03
SGS40TA045

Abstract: No abstract text available
Text: S G S- TH O M SO N t-w s i S G S 4 0 T A 045 NPN TRANSISTOR POWER MODULE POWER MODULE WITH , Base C urrent C ollecto r S urge C urrent T o tal D issipation at T0 = 25 °C S torage T e m perature M ax. O perating Ju n ctio n T e m perature Insu lation W ithstan d V oltag e (AC -R M S) V a lu e , urrent Gain IN D U C TIVE LOAD S torage Tim e Fall Tim e j is T e s t C o n d itio n s V ce = 450 V V , ) / S 7 SGS-THONISON " · It 3/4 E iB K s a a s m s s K s a 451 SGS40TA045 30E D S G S


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PDF 0030b4fi T0-240) T-91-20 O-240) PC-029« SGS40TA045
S-40T

Abstract: SGS40TA045 SGS40
Text: mm min. A B C D E F G H L M N P Q 31.5 6,2 0.75 14.9 30.1 38 4 20.3 8.9 22.4 25.2 1.95 4 max 31.7 6.4 , 3DE D 7^2^537 DG3GbS2 S ' T `3>3')5 ^ 7# fZ 7 SG S-TH O M SO N s IL I® TM « ! S G S-THQMSON SG S40T A 045D NPN TRANSISTOR POWER MODULE POWER MODULE WITH INTERNAL ISOLA TION , everse C ollecto r C urrent Base C urrent C ollecto r Surge C urrent Total D issipation at T0 = 25 °C S torage Tem perature M ax. O perating Jun ction T e m perature Insulation W ithstan d V oltag e (AC-RM S


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PDF SC04520 O-240) PC-029« S-40T SGS40TA045 SGS40
Supplyframe Tracking Pixel