The Datasheet Archive

Top Results (6)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
CUZ30V CUZ30V ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 30 V, USC
CUZ20V CUZ20V ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, USC
CEZ6V2 CEZ6V2 ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC
CUZ6V8 CUZ6V8 ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC
CUZ12V CUZ12V ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC
MUZ5V6 MUZ5V6 ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM

ct 2A05 diode Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2006 - ct 2a05

Abstract: ct 2A05 diode diode 2a05 2A01-2A07 DSA00303395 2A01 2A02 2A03 2A04 2A05
Text: Symbol 2A02 2A03 2A04 2A05 2A06 2A07 Unit 50 100 200 400 600 800 , ) Operating and Storage Temperature Range Notes: CT 15 pF RqJA 60 °C/W Tj, TSTG -65 , 60 CT , TOTAL CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) 75 0.8 1.6 0.4 1.2 , Reel, 13-inch 2A04-T DO-15 4K/Tape & Reel, 13-inch 2A05 -T DO-15 4K/Tape & Reel, 13


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PDF DO-15 J-STD-020C MIL-STD-202, DS29008 2A01-2A07 ct 2a05 ct 2A05 diode diode 2a05 2A01-2A07 DSA00303395 2A01 2A02 2A03 2A04 2A05
Not Available

Abstract: No abstract text available
Text: 2A05 2A06 2A07 Unit 50 100 200 400 600 800 1000 V 35 70 140 , 2 I t 17.5 μA 2 A s CT 15 pF RθJA 60 °C/W Tj, TSTG -65 to , TEMPERATURE (ºC) Fig. 1 Forward Current Derating Curve 100 75 f = 1 MHz TJ = 25°C 60 CT , 2A01-T 2A02-T 2A03-T 2A04-T 2A05 -T 2A06-T 2A07-T Notes: Packaging DO-15 DO-15 DO-15 DO


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PDF DO-15 J-STD-020C MIL-STD-202, DS29008
Not Available

Abstract: No abstract text available
Text: ITEM (4) CONTA CT SPRING B ERYLLIU M C O P P E R S I L V E R PL .0001 MIN O V E R C O P P E R PL , A NC E: 5 0 0 0 MEGOHMS MIN CON TA CT R E S IS T A NC E: 10 MILLIOHMS MAXIMUM CAPACITANCE: 2 PF , : INSERTION/WITHDRAWAL FORCE: .5 - 5.0 POU ND S CON TA CT RETENTION IN INSULATOR FORCE: 15 L B S MIN CON TA CT RETENTION IN INSULATOR TORQUE: 12 IN-OZ MINIMUM INSULATOR RETENTION IN .062 PANEL FORCE: NOT , , METHOD 2Ó05 , CONDITION I HUMIDITY: M I L -S T D -1 3 4 4 , METHOD 1002, CONDITION B Connectivity


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1999 - Not Available

Abstract: No abstract text available
Text: Symbols and Terms / trr Measurement Circuit Symbols and Terms VRSM Peak Reverse Surge Voltage IR Reverse Current t rr Reverse Recovery Time VRM Peak Reverse Voltage IRP Peak Reverse Current Ct Total Capacitance Between Terminals VP-P Reverse Voltage (Peak to Peak) IR (H) Reverse Current (Hight Temperature) Rth (j- ) Thermal Resistance, Junction to Lead VR , ) 0.3±0.1 1.6 –0 ±0.5 2±0.5 17.5 2±0.5 23 max 13.5±0.1 10.6±0.1 Feeding direction


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2011 - Not Available

Abstract: No abstract text available
Text: specialized applications, including CM series for generalpurpose, CT series for low profile, CA series for , High-Voltage series General Multilayer Ceramic Chip Capacitors CL CT series Low Profile , purpose Wide cap range Nickel barrier 01005, 0201, 0402 0603, 0805, 1206 1210, 1812 CT , KYOCERA PART NUMBER CM 21 X7R 104 SERIES CODE = = = CM CT CA General Purpose , is indicated in CT series EX. 125 → 1.25mm max. 095 → 0.95mm max. L = 13" Reel Taping & 4mm


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2009 - 63A02

Abstract: No abstract text available
Text: / 10 CT 4. Type Designation: CRM 12 F R010 Metal Film Milli-Ohm Size/Power , = 2512 F : ±1% Packaging RoHS Chip Resistor R010 : 10m G : ±2% CT : Tape & Reel , 270±5 oC solder , 10±1 sec dwell Solderability 245±5 oC solder, 2±0.5 sec dwell. Solder : Sn96


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2013 - Kyocera CM316

Abstract: No abstract text available
Text: specialized applications, including CM series for generalpurpose, CT series for low profile, CA series for , High-Voltage series General Multilayer Ceramic Chip Capacitors CL CT series Low Profile , purpose Wide cap range Nickel barrier 01005, 0201, 0402 0603, 0805, 1206 1210, 1812 CT , CM CT CA General Purpose Low Profile Arrays CL CF DM = = = ICs High Voltage , ˆ—1 OPTION Thickness max. value is indicated in CT series EX. 125 → 1.25mm max. 095 → 0.95mm max


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2013 - Not Available

Abstract: No abstract text available
Text: specialized applications, including CM series for generalpurpose, CT series for low profile, CA series for , High-Voltage series General Multilayer Ceramic Chip Capacitors CL CT series Low Profile , purpose Wide cap range Nickel barrier 01005, 0201, 0402 0603, 0805, 1206 1210, 1812 CT , CM CT CA General Purpose Low Profile Arrays CL CF DM = = = ICs High Voltage , ˆ—1 OPTION Thickness max. value is indicated in CT series EX. 125 → 1.25mm max. 095 → 0.95mm max


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2013 - Not Available

Abstract: No abstract text available
Text: specialized applications, including CM series for generalpurpose, CT series for low profile, CA series for , High-Voltage series General Multilayer Ceramic Chip Capacitors CL CT series Low Profile , purpose Wide cap range Nickel barrier 01005, 0201, 0402 0603, 0805, 1206 1210, 1812 CT , CM CT CA General Purpose Low Profile Arrays CL CF DM = = = ICs High Voltage , ˆ—1 OPTION Thickness max. value is indicated in CT series EX. 125 → 1.25mm max. 095 → 0.95mm max


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2010 - 20/KYOCERA CM03

Abstract: No abstract text available
Text: specialized applications, including CM series for generalpurpose, CT series for low profile, CA series for , High-Voltage series General Multilayer Ceramic Chip Capacitors CL CT series Low Profile , purpose Wide cap range Nickel barrier 01005, 0201, 0402 0603, 0805, 1206 1210, 1812 CT , KYOCERA PART NUMBER CM 21 X7R 104 SERIES CODE = = = CM CT CA General Purpose , is indicated in CT series EX. 125 → 1.25mm max. 095 → 0.95mm max. L = 13" Reel Taping & 4mm


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2010 - Not Available

Abstract: No abstract text available
Text: specialized applications, including CM series for generalpurpose, CT series for low profile, CA series for , High-Voltage series General Multilayer Ceramic Chip Capacitors CL CT series Low Profile , purpose Wide cap range Nickel barrier 01005, 0201, 0402 0603, 0805, 1206 1210, 1812 CT , KYOCERA PART NUMBER CM 21 X7R 104 SERIES CODE = = = CM CT CA General Purpose , is indicated in CT series EX. 125 → 1.25mm max. 095 → 0.95mm max. L = 13" Reel Taping & 4mm


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2010 - Not Available

Abstract: No abstract text available
Text: specialized applications, including CM series for generalpurpose, CT series for low profile, CA series for , High-Voltage series General Multilayer Ceramic Chip Capacitors CL CT series Low Profile , purpose Wide cap range Nickel barrier 01005, 0201, 0402 0603, 0805, 1206 1210, 1812 CT , KYOCERA PART NUMBER CM 21 X7R 104 SERIES CODE = = = CM CT CA General Purpose , is indicated in CT series EX. 125 → 1.25mm max. 095 → 0.95mm max. L = 13" Reel Taping & 4mm


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FH39-39S-0.3SHW

Abstract: CL580
Text: c GO c CD GO O CO CT ) O O CM CD O CD bUO c co o o +-> +-> o CD _Q CO CO CO o LU et: LU u_ LU Cd Cd o Lies 2±0.5 sec. A NEW UNIFORM COATING OF SOLDER SHALL COVER A MINIMUM OF 95


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PDF EDC3-157632-01 FH39- 3SHWC10) CL580 FH39-39S-0.3SHW
Not Available

Abstract: No abstract text available
Text: pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at ion , pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta , n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en , ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in , ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct


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PDF MN1380
2012 - diode v2

Abstract: ODS-186 MA4PBLP027
Text: MA4PBL027 HMIC Silicon Beamlead PIN Diode V2 Features No Wirebonds Required Rugged , Frequency > 110 GHz 110 Nanosecond Minority Carrier Lifetime Driven by Standard +5V TTL PIN Diode Driver MA4PBLP027 Topside Description The MA4PBL027 is a silicon beamlead PIN diode fabricated with M/A-COM , glass which supports the beam-leads. The diode is formed on the top of the pedestal, and airbridges connect the diode to the beam-leads. The topside is fully encapsulated with silicon nitride and also has


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PDF MA4PBL027 MA4PBLP027 MA4PBL027 diode v2 ODS-186 MA4PBLP027
2008 - Not Available

Abstract: No abstract text available
Text: antiparallel diode (s) ct du o Applications ■High frequency motor controls, inverters, UPS , Tj ct du Gate-emitter voltage Diode RMS forward current at TC = 25 °C A let so b , Figure 1. Internal schematic diagram ct u od r P e let o bs O Table 1 , . . . . . . . . . . . . . . . . . . . 13 (s) ct du o Pr e let o )(s ct u , junction-case IGBT max. 0.48 °C/W Thermal resistance junction-case diode max. 1.5 °C/W


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PDF STGW35NC60WD O-247
2008 - Not Available

Abstract: No abstract text available
Text: . Switching waveforms Figure 20. Diode recovery times waveform let o )(s ct u od r P e , conduction susceptibility) ■IGBT co-packaged with ultra fast free-wheeling diode ■High frequency operation (s) ct du o 2 1 Applications 3 TO-247 ■■Motor drivers , Figure 1. Internal schematic diagram ct u This IGBT utilizes the advanced PowerMESH™ process , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 (s) ct


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PDF STGW40NC60WD O-247
1999 - MMVL2101T1

Abstract: No abstract text available
Text: Diodes Device Data © Motorola, Inc. 1999 1 MMVL2101T1 CT , Diode Capacitance VR = 4.0 Vdc, f = , 2.5 2.7 3.2 PARAMETER TEST METHODS 1. CT , DIODE CAPACITANCE ( CT = CC + CJ). CT is measured , Diode These devices are designed in the popular Plastic Surface Mount Package for high volume , • High Q 30 VOLTS VOLTAGE VARIABLE CAPACITANCE DIODE • Controlled and Uniform Tuning , °C) Diode Capacitance Temperature Coefficient (VR = 4.0 Vdc, f = 1.0 MHz) Preferred devices are Motorola


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PDF MMVL2101T1/D MMVL2101T1 MMVL2101T1
2001 - Not Available

Abstract: No abstract text available
Text: Reverse Breakdown Voltage (IR = 10 µAdc) Reverse Voltage Leakage Current (VR = 25 Vdc, TA = 25°C) Diode Capacitance Temperature Coefficient (VR = 4.0 Vdc, f = 1.0 MHz) CT , Diode Capacitance VR = 4.0 Vdc, f = 1.0 , , Tuning Ratio C2/C30 f = 1.0 MHz Typ 2.9 Max 3.2 PARAMETER TEST METHODS 1. CT , DIODE CAPACITANCE , MMVL2105T1 Preferred Device Silicon Tuning Diode These devices are designed in the popular , CAPACITANCE DIODE 1 MAXIMUM RATINGS Symbol VR IF Rating Continuous Reverse Voltage Peak Forward Current


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PDF MMVL2105T1 r14525 MMVL2105T1/D
2004 - BB844

Abstract: No abstract text available
Text: -07-2002 BB844 Diode capacitance CT = (VR ) f = 1MHz Capacitance ratio CTref / CT = (VR ) f = 1MHz 5 90 , BB844 Silicon Variable Capacitance Diode For FM radio tuner with extended frequency band 77MHz to 108MHz Designed for application requiring back-to-back diode configuration for optimum , (common cathode) for perfect dual diode tracking Good C- V linearity High figure of merit BB844 , ) Marking 1.8 SNs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse


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PDF BB844 77MHz 108MHz 15cal BB844
2000 - MMVL2101T1

Abstract: 65t marking
Text: ) Reverse Voltage Leakage Current (VR = 25 Vdc, TA = 25°C) Diode Capacitance Temperature Coefficient (VR = 4.0 Vdc, f = 1.0 MHz) CT , Diode Capacitance VR = 4.0 Vdc, f = 1.0 MHz pF Device Q, Figure , TEST METHODS 1. CT , DIODE CAPACITANCE 4. TCC, DIODE CAPACITANCE TEMPERATURE COEFFICIENT ( CT = , MMVL2101T1 Preferred Device Silicon Tuning Diode These devices are designed in the popular , VARIABLE CAPACITANCE DIODE 1 MAXIMUM RATINGS Symbol Rating Value 2 Unit VR


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PDF MMVL2101T1 r14153 MMVL2101T1/D MMVL2101T1 65t marking
1999 - MMVL2101T1

Abstract: 106 CT motorola 65t marking
Text: Device Data © Motorola, Inc. 1999 1 MMVL2101T1 CT , Diode Capacitance VR = 4.0 Vdc, f = 1.0 MHz , 3.2 PARAMETER TEST METHODS 1. CT , DIODE CAPACITANCE ( CT = CC + CJ). CT is measured at 1.0 MHz , Diode These devices are designed in the popular Plastic Surface Mount Package for high volume , · High Q 30 VOLTS VOLTAGE VARIABLE CAPACITANCE DIODE · Controlled and Uniform Tuning Ratio , TCC - 280 - ppm/°C Reverse Voltage Leakage Current (VR = 25 Vdc, TA = 25°C) Diode


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PDF MMVL2101T1/D MMVL2101T1 MMVL2101T1 106 CT motorola 65t marking
2001 - 65t marking

Abstract: MMVL2101T1 diode sod 106 marking 4g
Text: ppm/°C Reverse Voltage Leakage Current (VR = 25 Vdc, TA = 25°C) Diode Capacitance Temperature Coefficient (VR = 4.0 Vdc, f = 1.0 MHz) CT , Diode Capacitance VR = 4.0 Vdc, f = 1.0 MHz pF Device Q , TEST METHODS 1. CT , DIODE CAPACITANCE 4. TCC, DIODE CAPACITANCE TEMPERATURE COEFFICIENT ( CT = , MMVL2101T1 Preferred Device Silicon Tuning Diode These devices are designed in the popular , VARIABLE CAPACITANCE DIODE 1 MAXIMUM RATINGS Symbol Rating Value 2 Unit VR


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PDF MMVL2101T1 r14525 MMVL2101T1/D 65t marking MMVL2101T1 diode sod 106 marking 4g
2002 - ct ratio test

Abstract: marking 4g
Text: Ct , Diode Capacitance VR = 4.0 Vdc, f = 1.0 MHz pF Min Nom Max 6.1 6.8 7.5450 Q, Figure of , PARAMETER TEST METHODS 1. CT , DIODE CAPACITANCE (C T = CC + CJ). CT is measured at 1.0 MHz using a , . MMVL2101T1 CT , DIODE CAPACITANCE (pF) TYPICAL DEVICE CHARACTERISTICS VR, REVERSE VOLTAGE (VOLTS , LESHAN RADIO COMPANY, LTD. Silicon Tuning Diode MMVL2101T1 These devices are designed in , BreakdownVoltage (IR = 10 µAdc) Symbol V(BR)R (VR = 25 Vdc, TA = 25°C) Diode Capacitance Temperature


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PDF MMVL2101T1 MMVL2101T1 ct ratio test marking 4g
Not Available

Abstract: No abstract text available
Text: SPEED SILICON SWITCHING DIODE AXIAL LEAD CT 40 TO CT 59 CT 70 TO CT 79 500mW DO- 35 Glass Axial Package FEATURES General Purpose Hermetically Sealed Glass Package Switching Diode ABSOLUTE MAXIMUM , SILICON SWITCHING DIODE AXIAL LEAD CT 40 TO CT 59 CT 70 TO CT 79 500mW DO- 35 Glass Axial Package , SYMBOL TEST CONDITION MIN Diode Capacitance Reverse Recovery Time Cd trr Reverse , =1MHz CT 40 TO CT 49 CT 50 TO CT 79 IR =10mA, VR=6V, RL=100Ω VALUE MAX UNIT 4 2 pF pF


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PDF 500mW C-120 210103D
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