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Part Manufacturer Description Datasheet Download Buy Part
PUCC21732QDWQ1 Texas Instruments Automotive single-channel isolated gate driver for SiC/IGBT with advanced protection and high-CMTI 16-SOIC -40 to 125
UCC21732QDWRQ1 Texas Instruments Automotive single-channel isolated gate driver for SiC/IGBT with advanced protection and high-CMTI 16-SOIC -40 to 125
UCC21732QDWQ1 Texas Instruments Automotive single-channel isolated gate driver for SiC/IGBT with advanced protection and high-CMTI 16-SOIC -40 to 125
2-2154857-2 TE Connectivity Ltd Socket, SCALABLE LED, 2PC, Gold, w/TS LED Manufacturer:CREE;LG Innotek;Samsung;Citizen;Seoul Semi;LED Family:Cree CXB 1816;Cree CXB 3050;Cree CXA 3050;Cree CXB 1820;Cree CXB 2530;Cree CXB 1520;Cree CXB 1512;Cree CXB 1507;Citizen CLL052;Samsung LC040D;Cree CXA 15xx;Cree CXA 18xx;Cree CXB 1830;Cree CXB 2540;Cree CXA 30XX;CXA 13xx;Samsung LC060D;Cree CXB 1310;Citizen CLL040;Citizen CLL042;Citizen CLL050;Seoul SBWW1F1A;Samsung LC080D;CXA 25xx;Optics Alignment:No;Enables Zhaga Compatibility:No;Operating Voltage:250 VDC Cree CXB 1816 | Lumawise Led Holder | Part# 2-2154857-2 | TE Connectivity

cree Sic Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2006 - cree Sic

Abstract: schottky diode FIT 155C CSD04060 CSD06060 CSD10060
Text: ABSTRACT Cree introduced its ZERO RECOVERY® line of SiC power rectifiers four years ago into mainstream , performance in the field. This paper explains why Cree SiC products are expected to be inherently reliable, discusses Cree 's approach to reliability assessment, and presents the expected lifetime of SiC power , Summary VC CPWR-RS03, RE - October 2008 r Diode Reliability SiC Powe Cree 's 600-V family of , /power. For warranty information please contact Cree Sales at PowerSales@cree.com. SiC


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PDF CPWR-RS03, cree Sic schottky diode FIT 155C CSD04060 CSD06060 CSD10060
2006 - CSD06060A

Abstract: cree Sic reliability cree 155C CSD10060A schottky diode FIT powerdio
Text: ABSTRACT Cree introduced its ZERO RECOVERY® line of SiC power rectifiers three years ago into mainstream , performance in the field. This paper explains why Cree SiC products are expected to be inherently reliable, discusses Cree 's approach to reliability assessment, and presents the expected lifetime of SiC power diodes under various operational and environmental conditions. SiC Schottky Diode Reliability Cree , www.cree.com/power. For warranty information please contact Cree Sales at PowerSales@cree.com. SiC


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PDF CPWR-RS03, CSD06060A cree Sic reliability cree 155C CSD10060A schottky diode FIT powerdio
2001 - 12 VOLT 2 AMP smps

Abstract: smps 12 volt 3 amp 5 VOLT 20 AMP smps 600 VOLT 6 AMP smps 60 amp 600 Volt Diode 12 VOLT 100 AMP smps 10 amp diode rectifiers 15 Amp 100 volt mosfet 12 VOLT 10 AMP smps 12 volt 4 amp smps
Text: paper were not Cree devices the failures have led to questions about the dV/dt performance of SiC , 20 Cree SiC ZERO ® RECOVERY Schottky diodes were tested at a voltage slew rate greater than , method approximating a SMPS application. There were no failures of the Cree SiC ZERO RECOVERY , Reliability Study SiC ZERO RECOVERY® Schottky Diode Reliability at Extremely High Voltage Slew Rates Summary Testing was performed to determine if a failure mechanism was present in the Cree


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PDF CPWR-RS01, RS904 12 VOLT 2 AMP smps smps 12 volt 3 amp 5 VOLT 20 AMP smps 600 VOLT 6 AMP smps 60 amp 600 Volt Diode 12 VOLT 100 AMP smps 10 amp diode rectifiers 15 Amp 100 volt mosfet 12 VOLT 10 AMP smps 12 volt 4 amp smps
2014 - Not Available

Abstract: No abstract text available
Text: control systems, or air traffic control systems. Related Links • • • Cree SiC , . RoHS Declarations for this product can be obtained from your Cree representative or from the Product , their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree , /Request_Diode_model SiC MOSFET and diode reference designs: http://response.cree.com/SiC_RefDesigns Copyright © 2014 Cree , Inc. All rights reserved. The information in this document is subject to change without


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PDF C3D08065E 650-Volt O-252-2 C3D08065E
2014 - Not Available

Abstract: No abstract text available
Text: control systems, or air traffic control systems. Related Links • • • Cree SiC , . RoHS Declarations for this product can be obtained from your Cree representative or from the Product , their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree , /Request_Diode_model SiC MOSFET and diode reference designs: http://response.cree.com/SiC_RefDesigns Copyright © 2014 Cree , Inc. All rights reserved. The information in this document is subject to change without


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PDF C3D06065E 650-Volt O-252-2 C3D06065E
2004 - CCM PFC inductor analysis

Abstract: PFC design what is THERMAL RUNAWAY IN RECTIFIER MOSFET boost pfc operate in ccm
Text: SiC Schottky Diodes in Power Factor Correction By Stuart Hodge Jr., Senior Member IEEE, Cree Inc., Efficiency gains resulting from the use of highvoltage SiC rectifiers in PFC boost converters , rectifiers and Cree 's SiC Schottky rectifiers. Although efficiency improvements are often a major design , in SiC and Their Applications," Cree Inc., www.cree.com/ftp/ PFC converters. As you can see, a major , reliability. At the same time, SiC Schottkys can reduce EMI. ctive Power Factor Correction (PFC) is w idely


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PDF PCIM-20-CU CCM PFC inductor analysis PFC design what is THERMAL RUNAWAY IN RECTIFIER MOSFET boost pfc operate in ccm
2005 - vfd B DELTA

Abstract: operation of IGBT in inverter section delta electronics VFD cree Sic HFA15TB60 IRG4BC20K EN61800-3 inverter vfd B DELTA delta vfd control CSD10060
Text: ://powerelectronics. com/mag/power_ 3. Singh, Ranbir, and Richmond, James, " SiC Power Schottky Cree 's SiC ZERO , By Michael O'Neill, Applications Engineer, Cree Inc., Durham, N.C. Silicon carbide enables the , single-crystal silicon carbide ( SiC ) wafers, the time has come to recognize the true potential this technology has to offer. The advantages of SiC over its counterpart Si and gallium arsenide (GaAs , be the replacement of the Si PiN diode with a SiC Schottky Barrier Diode (SBD). The second phase


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PDF PCIM-26-CU vfd B DELTA operation of IGBT in inverter section delta electronics VFD cree Sic HFA15TB60 IRG4BC20K EN61800-3 inverter vfd B DELTA delta vfd control CSD10060
2011 - CPMF-1200-S080B

Abstract: DMOSFET bare Die mosfet C2D10120D CMF20120D S080b MOSFET 800V 10A gate drive pulse transformer Gate Drive Characteristics Requirements Cree SiC diode die Cree SiC MOSFET
Text: : +1.919.313.5451 www.cree.com/power Applications Information: The Cree SiC DMOSFET has removed the upper , % 10% 856H 10% VGS(off) C2D10120D 10A, 1200V SiC Schottky Input Pulse Fall Time , . * The die-on-tape method of delivering these SiC die may be considered a means of temporary storage only , . Cree will further recommend that all die be removed from tape to a waffle pack, to a similar storage , systems. Copyright © 2011 Cree , Inc. All rights reserved. The information in this document is subject to


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PDF CPMF-1200-S080B CPMF-1200-S080B DMOSFET bare Die mosfet C2D10120D CMF20120D S080b MOSFET 800V 10A gate drive pulse transformer Gate Drive Characteristics Requirements Cree SiC diode die Cree SiC MOSFET
2010 - bare Die mosfet

Abstract: DMOSFET CMF20120 ferroxcube 3e27 CPMF-1200-S080B Controlled avalanche Schottky CMF-2012 transformer mosfet gate drive circuit diode schottky 1000V 10a gate drive pulse transformer Gate Drive Characteristics Requirements
Text: Fax: +1.919.313.5451 www.cree.com/power Applications Information: The Cree SiC DMOSFET has , 10% VGS(off) C2D10120D 10A, 1200V SiC Schottky Input Pulse Fall Time Input Pulse Rise , . * The die-on-tape method of delivering these SiC die may be considered a means of temporary storage only , . Cree will further recommend that all die be removed from tape to a waffle pack, to a similar storage , systems. Copyright © 2010-2011 Cree , Inc. All rights reserved. The information in this document is


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PDF CPMF-1200-S080B CPMF-1200-S080B bare Die mosfet DMOSFET CMF20120 ferroxcube 3e27 Controlled avalanche Schottky CMF-2012 transformer mosfet gate drive circuit diode schottky 1000V 10a gate drive pulse transformer Gate Drive Characteristics Requirements
2011 - CPMF-1200-S160B

Abstract: DMOSFET bare Die mosfet Cree SiC diode die mosfet 10a 800v gate drive pulse transformer Gate Drive Characteristics Requirements diode schottky 1000V 10a MOSFET 800V 10A D-MOSFET C2D10120D
Text: : +1.919.313.5451 www.cree.com/power Applications Information: The Cree SiC DMOSFET has removed the upper , % VGS(off) C2D10120D 10A, 1200V SiC Schottky Input Pulse Fall Time Input Pulse Rise Time , . * The die-on-tape method of delivering these SiC die may be considered a means of temporary storage only , . Cree will further recommend that all die be removed from tape to a waffle pack, to a similar storage , systems. Copyright © 2011 Cree , Inc. All rights reserved. The information in this document is subject to


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PDF CPMF-1200-S160B CPMF-1200-S160B DMOSFET bare Die mosfet Cree SiC diode die mosfet 10a 800v gate drive pulse transformer Gate Drive Characteristics Requirements diode schottky 1000V 10a MOSFET 800V 10A D-MOSFET C2D10120D
2011 - DMOSFET

Abstract: CMF10120 bare Die mosfet CMF10120D DMOS SiC C2D10120D CPMF-1200-S160B Cree SiC MOSFET SiC POWER MOSFET 12v 10A electronic transformer
Text: : +1.919.313.5451 www.cree.com/power Applications Information: The Cree SiC DMOSFET has removed the upper , (off) C2D10120D 10A, 1200V SiC Schottky Input Pulse Fall Time Input Pulse Rise Time + , . * The die-on-tape method of delivering these SiC die may be considered a means of temporary storage only , . Cree will further recommend that all die be removed from tape to a waffle pack, to a similar storage , systems. Copyright © 2011 Cree , Inc. All rights reserved. The information in this document is subject to


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PDF CPMF-1200-S160B CPMF-1200-S160B DMOSFET CMF10120 bare Die mosfet CMF10120D DMOS SiC C2D10120D Cree SiC MOSFET SiC POWER MOSFET 12v 10A electronic transformer
2010 - DMOSFET

Abstract: CMF10120 CMF10120D CREE 1200V Z-Rec electronic transformer halogen 12v SiC POWER MOSFET C2D10120D Cree SiC MOSFET ferroxcube tx 3E27
Text: . Copyright © 2010-2011 Cree , Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks and Z-REC and Z-FET are trademarks of Cree , Inc. 7 CMF10120D Rev. - Cree , Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power Applications Information: The Cree SiC DMOSFET has , % 10% 856H 10% VGS(off) C2D10120D 10A, 1200V SiC Schottky Input Pulse Fall Time


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PDF CMF10120D-Silicon CMF10120D O-247-3 CMF10120D DMOSFET CMF10120 CREE 1200V Z-Rec electronic transformer halogen 12v SiC POWER MOSFET C2D10120D Cree SiC MOSFET ferroxcube tx 3E27
2013 - Not Available

Abstract: No abstract text available
Text: to application note: [CPWR-AN12] Design Considerations when using Cree SiC Modules. 3 , SiC Schottky Diode Characteristics Symbol Parameter Min. Typ. Max. 1.8 2.2 Unit , : The SiC MOSFET module switches at speeds beyond what is customarily associated with IGBT based , communication or control systems, air traffic control systems, or weapons systems. Copyright © 2013 Cree , Inc. All rights reserved. The information in this document is subject to change without notice. Cree and


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PDF CAS100H12AM1 CAS100H12AM1
2014 - CPWR-AN12

Abstract: CAS100H12AM1
Text: to application note: [CPWR-AN12] Design Considerations when using Cree SiC Modules. 3 , SiC Schottky Diode Characteristics Symbol Parameter Min. Typ. Max. 1.8 2.2 Unit , : The SiC MOSFET module switches at speeds beyond what is customarily associated with IGBT based , control systems, air traffic control systems, or weapons systems. Copyright © 2014 Cree , Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are


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PDF CAS100H12AM1 CAS100H12AM1 CPWR-AN12
2013 - CPWR-AN12

Abstract: CCS050M12CM2
Text: Refer to application note: Design Considerations when using Cree SiC Modules Part 1 and Part 2 , © Load = 200 μH TJ = 150 ˚C Note: IEC 60747-8-4 Definitions Fig. 18 Free-Wheeling SiC Schottky , Note: The SiC MOSFET module switches at speeds beyond what is customarily associated with IGBT based , communication or control systems, air traffic control systems, or weapons systems. Copyright © 2013 Cree , Inc. All rights reserved. The information in this document is subject to change without notice. Cree and


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PDF CCS050M12CM2 CCS050M12CM2 CPWR-AN12
2013 - Not Available

Abstract: No abstract text available
Text: to application note: [CPWR-AN12] Design Considerations when using Cree SiC Modules. 3 , SiC Schottky Diode Characteristics Symbol Parameter Min. Typ. Max. 1.8 2.2 Unit , : The SiC MOSFET module switches at speeds beyond what is customarily associated with IGBT based , communication or control systems, air traffic control systems, or weapons systems. Copyright © 2013 Cree , Inc. All rights reserved. The information in this document is subject to change without notice. Cree and


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PDF CAS100H12AM1 CAS100H12AM1
2013 - Not Available

Abstract: No abstract text available
Text: to application note: [CPWR-AN12] Design Considerations when using Cree SiC Modules. 3 , SiC Schottky Diode Characteristics Symbol Parameter Min. Typ. Max. 1.8 2.2 Unit , : The SiC MOSFET module switches at speeds beyond what is customarily associated with IGBT based , communication or control systems, air traffic control systems, or weapons systems. Copyright © 2013 Cree , Inc. All rights reserved. The information in this document is subject to change without notice. Cree and


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PDF CAS100H12AM1 CAS100H12AM1
2015 - CAS100H12

Abstract: No abstract text available
Text: application note: [CPWR-AN12] Design Considerations when using Cree SiC Modules. 3 CAS100H12AM1,Rev. D , +20/-5V RG = 5.1Ω Note: IEC 60747-8-4 Definitions Fig. 19, 20 Free-Wheeling SiC Schottky , Diode 0.35 Unit Test Conditions Note 0.37 ˚C/W Module Application Note: The SiC , © 2014 Cree , Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks and Z-Rec is a trademark of Cree , Inc. 11


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PDF CAS100H12AM1 CAS120M12BM2 CAS100H12AM1 CAS100H12
2010 - mosfet 1200V

Abstract: cmf20120 SiC MOSFET Cree SiC MOSFET CMF20120D DMOSFET JEDEC24 DMOS SiC IXDI414 mosfet 10a 800v
Text: .14 3 CMF20120D Rev. - Applications Information The Cree SiC MOSFET has removed the upper , addressed to get maximum benefit from the SiC MOSFET. In general, although the SiC MOSFET is a superior , applying the SiC MOSFETs: modest transconductance requires that VGS needs to be 20 V to optimize , the SiC MOSFET is considerably lower. In fact, the product of gate voltage swing and gate charge for the SiC MOSFET is lower than comparable silicon devices. The gate voltage must have a fast dV/dt to


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PDF CMF20120D-Silicon CMF20120D O-247-3 CMF20120D mosfet 1200V cmf20120 SiC MOSFET Cree SiC MOSFET DMOSFET JEDEC24 DMOS SiC IXDI414 mosfet 10a 800v
2010 - CMF20120D

Abstract: JEDEC24 mosfet 1200V RB160M DMOS SiC Silicon MOSFET 1000V MOSFET 800V 10A Cree SiC MOSFET Controlled avalanche Schottky IXDI414
Text: .14 3 CMF20120D Rev. A Applications Information The Cree SiC MOSFET has removed the upper , addressed to get maximum benefit from the SiC MOSFET. In general, although the SiC MOSFET is a superior , applying the SiC MOSFETs: modest transconductance requires that VGS needs to be 20 V to optimize , the SiC MOSFET is considerably lower. In fact, the product of gate voltage swing and gate charge for the SiC MOSFET is lower than comparable silicon devices. The gate voltage must have a fast dV/dt to


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PDF CMF20120D-Silicon CMF20120D O-247-3 CMF20120D JEDEC24 mosfet 1200V RB160M DMOS SiC Silicon MOSFET 1000V MOSFET 800V 10A Cree SiC MOSFET Controlled avalanche Schottky IXDI414
2008 - AEC-Q101-001

Abstract: AEC-Q101-REV-C jesd22-a105-c JESD22-A105C AEC-Q101-002 C2D20120D SiC BJT AECQ101-001 AEC-Q101C JESD22-A104-B
Text: are fabricated using nominally 100-mm (or smaller) SiC substrates manufactured by Cree , Inc., Furthermore, this report certifies that product families using 1200-V SiC Schottky diode die assembled in TO , 1200-V Qualifi This report documents the qualification and reliability test results for the Cree , the testing process. This report certifies that Schottky diode die manufactured at Cree , Inc., Durham , (power-on hours) for Cree Schottky diode products in the field. This report and its conclusions do not


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PDF 200-V 100-mm O-220 O-247 AEC-Q101-001 AEC-Q101-REV-C jesd22-a105-c JESD22-A105C AEC-Q101-002 C2D20120D SiC BJT AECQ101-001 AEC-Q101C JESD22-A104-B
2014 - Cree SiC MOSFET

Abstract: No abstract text available
Text: Considerations when using Cree SiC Modules Part 1 and Part 2. [CPWR-AN12, CPWR-AN13] Copyright © 2014 Cree , Inc. All rights reserved. The information in this document is subject to change without notice. Cree , Declarations for this product can be obtained from your Cree representative or from the Product Documentation , to frequently revise the SVHC listing for the foreseeable future,please contact a Cree , control systems, air traffic control systems. Module Application Note: The SiC MOSFET module switches


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PDF CAS300M17BM2 106mm CPWR-AN12, CPWR-AN13] CAS300M17BM2 Cree SiC MOSFET
2014 - CCS020M12CM2

Abstract: CPWR-AN13
Text: Considerations when using Cree SiC Modules Part 1 and Part 2. [CPWR-AN12, CPWR-AN13] Copyright © 2014 Cree , Inc. All rights reserved. The information in this document is subject to change without notice. Cree , . RoHS Declarations for this product can be obtained from your Cree representative or from the Product , their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree , control systems, air traffic control systems. Module Application Note: The SiC MOSFET module switches


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PDF CCS020M12CM2 CPWR-AN12, CPWR-AN13] CCS020M12CM2 CPWR-AN13
vienna rectifier

Abstract: Zero crossing switching thyristors module three phase bridge rectifier picture S6 9A Diode Smd Cree SiC diode die single phase vienna rectifier rectifier diode 230V AC input and 230V DC output Cree SiC MOSFET rectifier three phase 40a design and of 1- vienna rectifier
Text: diode is made of two 10A/600V SiC diodes dice in parallel from Cree . With a positive temperature , temperature range. Fig.5 shows the reverse recovery behaviour of a 10A/600V Cree SiC diode versus a silicon , Low profile power module combined with state of the art MOSFET switches and SiC diodes allows high , devices and latest SiC diodes for increased operating frequency and highest efficiency. A six-switch , to line mains systems. When coupled with SiC diodes the switching losses are further reduced and


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PDF F-33700 CH-8092 APEC2007) vienna rectifier Zero crossing switching thyristors module three phase bridge rectifier picture S6 9A Diode Smd Cree SiC diode die single phase vienna rectifier rectifier diode 230V AC input and 230V DC output Cree SiC MOSFET rectifier three phase 40a design and of 1- vienna rectifier
2012 - Integrated cooling solutions hot up

Abstract: No abstract text available
Text: E R D e v ’ I S S U E APE T-2000 SiC Gate Driver APE HT-2000 SiC Power Module Running hot: APEI, Inc.’s high temperature 225°C rated APE HT-2000 series SiC power module for military and hybrid automotive systems. Variants of the HT-2000 can be built out with Cree SiC MOSFETs (1200V/250A), Semisouth SiC JFETs (1200V/250A), or Rohm SiC TMOS (900V/1000A). Thermal management is , models based on SiC transistors and diodes. “They already have a 1 kW plug-in charger using silicon


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PDF RD100 Integrated cooling solutions hot up
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