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US2:84CPD92EMF81 STARTER,DUPLEX,S0,THOLR,120VAC,MCP,N4 ; US2:84CPD92EMF81
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US2:84CPD92WMF81 ECAD Model
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US2:84CPD92BMF81 STARTER,DUPLEX,S0,THOLR,120VAC,MCP,N1 ; 84CPD92BMF81
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US2:84CPD920MF81 STARTER,DUPLEX,S0,THOLR,120VAC,MCP,N12 ; US2:84CPD920MF81
US2:84CPD920MF81 ECAD Model
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84CPD92BMF81
84CPD92BMF81 ECAD Model
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84CPD92EMF81
84CPD92EMF81 ECAD Model
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84CPD92WMF81
84CPD92WMF81 ECAD Model
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84CPD920MF81
84CPD920MF81 ECAD Model
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Crystek Corporation
CCPD-922X-25-122.880 OSCILLATOR CRYSTAL
CCPD-922X-25-122.880 ECAD Model
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cpd92 datasheet (2)

Part ECAD Model Manufacturer Description Type PDF
CPD92 CPD92 ECAD Model Central Semiconductor Chip Form: SCHOTTKY DIODE Original PDF
CPD92V CPD92V ECAD Model Central Semiconductor Schottky Diode High Voltage Schottky Diode Chip Original PDF

cpd92 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
CPD92

Abstract: Schottky Diode 1N6263 CMDD6263 CMKD6263 CMOD6263 CMPD6263 CMSD6263
Text: PROCESS CPD92 Central Schottky Diode TM Semiconductor Corp. High Voltage Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 9.0 x 9.0 MILS Die Thickness 7.9 MILS Anode Bonding Pad Area 4.8 MILS DIAMETER Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 139,050 , 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com PROCESS CPD92 Typical


Original
PDF CPD92 CMDD6263 CMKD6263 CMOD6263 CMPD6263 CMSD6263 1N6263 CPD92 Schottky Diode 1N6263 CMDD6263 CMKD6263 CMOD6263
CP588V

Abstract: CP-392V CPD76 CPD96 CPD92 CPD91 CPD80 CPD48 CP191 CP188
Text: ) CPD48 CPD76 CPD78 CPD80 CPD83 CPD88 CPD91 CPD92 CPD96 CP188 CP191 CP192 CP305 CP307 CP309 , CPD88V CPD91V CPD92V CPD96V CP188V CP191V CP192V CP305V CP307V CP309V CP310V CP314V CP315V


Original
PDF CPD48 CPD76 CPD78 CPD80 CPD83 CPD88 CPD91 CPD92 CPD96 CP188 CP588V CP-392V CPD76 CPD96 CPD92 CPD91 CPD80 CPD48 CP191 CP188
marking D63

Abstract: No abstract text available
Text: Data for this device, please see Process CPD92 on page 887. R2 (31-October 2002) *| Q6 Central


OCR Scan
PDF CMDD6263 CPD92 31-October OD-323 OD-323 marking D63
marking code sot563

Abstract: d2rd C5 marking diode
Text: Characteristic Data for this device, please see Process CPD92 on page 887. 270 R0 ( 8-May 2003) Central


OCR Scan
PDF CMLD6263A CMLD6263C CMLD6263S CMLD6263S CMLD6263 OT-563 OT-563 marking code sot563 d2rd C5 marking diode
MARKING CODE 190 SOT363

Abstract: No abstract text available
Text: Electrical Characteristic Data for this Device Process CPD92 , Please See Page 829. R1 (13-November 2002


OCR Scan
PDF CMKD6263 OT-363 CPD92, 13-November OT-363 MARKING CODE 190 SOT363
R1 marking

Abstract: No abstract text available
Text: For Typical Electrical Characteristic Data for this Device Process CPD92 , Please See Page 829. R1


OCR Scan
PDF CMOD6263 CPD92, 13-November CMOD6263 OD-523 OD-523 R1 marking
Not Available

Abstract: No abstract text available
Text: Typical Electrical Characteristic Data for this device, please see Process CPD92 on page 887. R1 (13


OCR Scan
PDF CMLD6263DO OT-563 CPD92 13-November OT-563
Not Available

Abstract: No abstract text available
Text: CPD80. . CPD92. . CPZ18


OCR Scan
PDF CP108 CP117 CP147 CP176 CP188 CP191 CP192 CP195 CP206 CP207
MARKING 239 SOT

Abstract: No abstract text available
Text: Characteristic Data for this device, please see Process CPD92 on page 887. R1 (13-November 2002) 238


OCR Scan
PDF CMKD6263DO OT-363 CPD92 13-November OT-363 MARKING 239 SOT
marking D63

Abstract: No abstract text available
Text: this Device Process CPD92 , Please See Page 829. R2 (31-October 2002) )g g Central


OCR Scan
PDF CMDD6263 100ii CPD92, 31-October OD-323 OD-323 marking D63
Not Available

Abstract: No abstract text available
Text: Process CPD92 on page 887. R1 (13-November 2002) 308 central CMOD6263 s u r fa c e m ount


OCR Scan
PDF CMOD6263 CPD92 13-November OD-523 OD-523
Not Available

Abstract: No abstract text available
Text: Data for this Device Process CPD92 , Please See Page 829. R1 (13-November 2002) 232 Central


OCR Scan
PDF CMKD6263DO OT-363 CPD92, 13-November OT-363
MARKING CODE 190 SOT363

Abstract: kd35
Text: Electrical Characteristic Data for this device, please see Process CPD92 on page 887. R2 (6-August 2003


OCR Scan
PDF CMKD6263 OT-363 CPD92 OT-363 MARKING CODE 190 SOT363 kd35
marking code 4

Abstract: diode marking RJ DEVICE MARKING CODE RJ
Text: Data for this device, please see Process CPD92 on page 887. R2 (4-January 2004) 4 9 4 Central


OCR Scan
PDF CMSD6263 CMSD6263A CMSD6263C CMSD6263S marking code 4 diode marking RJ DEVICE MARKING CODE RJ
marking code NA sot23

Abstract: marking code R5 sot23 marking code 98 sot23 MARKING CODE 035 on semiconductor marking code sot MARKING 210 DIODE MARKING CODE G SOT23 diode sot23 MARKING CODE r5 R5 SOT23 sot-23 code r5
Text: , please see Process CPD92 on page 887. R5 (6-August 2003) 342 Central Semiconductor Corp


OCR Scan
PDF CMPD6263 CMPD6263A CMPD6263C CMPD6263S OT-23 marking code NA sot23 marking code R5 sot23 marking code 98 sot23 MARKING CODE 035 on semiconductor marking code sot MARKING 210 DIODE MARKING CODE G SOT23 diode sot23 MARKING CODE r5 R5 SOT23 sot-23 code r5
Not Available

Abstract: No abstract text available
Text: Characteristic Data for this device, please see Process CPD92 on page 887. R1 ( 20-February 2003) 268


OCR Scan
PDF CMLD6263 OT-563 CPD92 20-February OT-563
marking code 829

Abstract: MARKING CODE 0051 MARKING CODE c26 c26 marking
Text: this Device Process CPD92 , Please See Page 829. R1 (14-November 2002) 404 Central CMSD6263


OCR Scan
PDF CMSD6263 CMSD6263A CMSD6263C CMSD6263S 14-November marking code 829 MARKING CODE 0051 MARKING CODE c26 c26 marking
UJT 2n3904

Abstract: transistor 2N4033 mj15003 equivalent ujt 2N6027 2n4209 datasheet mj15004 2N4393 transistor 2N5401 MJ15003 MJ15004 BAV45
Text: Principal Device High Voltage New CPD92X 1N6263 High Current New CPD48V CPD82X CPD98V


Original
PDF
BF244 datasheet

Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2N3304 bf256 2n5910 2n5248
Text: . CPD92X . 244 2N696 .CP191V . 42


Original
PDF 1N456 CPD64 1N456A. 1N457 1N457A. 1N458 BF244 datasheet 2N5133 equivalent MPS5771 BD345 BD347 BF244 2N3304 bf256 2n5910 2n5248
2N2645

Abstract: cpd83v-cmpd7000-ws 1N3070 CPZ25 CPZ25-CMZ5937B-WR CPD83V-1N4148-WN CP191V-2N2222A-WN CPD83V CPD83V-1N4148-WS CPD98V
Text: -1N914-WR CPD92X-CMPD6263-WR CPZ25-CMZ5937B-WN CPZ25-CMZ5940B-WN CPZ25-1N4752A-WN CPZ25-1N5918B-WN CPZ25-CMZ5937B-WR , Gross Die Quantity 5" Wafer Diameter CPD48V CPD76X CPD77 CPD80V CPD83V CPD91V CPD92X CPD94X


Original
PDF CPD83V-1N914-WN CPD83V-1N914A-WN CPD83V-CMPD7000-WS CPD83V-1N4148-WS CPD83V-1N914-WR CPD92X-CMPD6263-WR CPZ25-CMZ5937B-WN CPZ25-CMZ5940B-WN CPZ25-1N4752A-WN CPZ25-1N5918B-WN 2N2645 cpd83v-cmpd7000-ws 1N3070 CPZ25 CPZ25-CMZ5937B-WR CPD83V-1N4148-WN CP191V-2N2222A-WN CPD83V CPD83V-1N4148-WS CPD98V
zener 563

Abstract: diode zener d1 marking C73 900 mhz schottky diode zener diode mv 5 marking code c73 sot 563 package CPD92 CPD92-CMPD6263 zener diode marking code 15
Text: Central CEN1073 TM Semiconductor Corp. SURFACE MOUNT DUAL ZENER + SILICON SCHOTTKY DIODE COMBINATION DESCRIPTION: The CENTRAL SEMICONDUCTOR CEN1073 is a "Basic Building Block" device consisting of two Zener Diodes and one Schottky Diode in a SOT563 surface mount package, designed for MacSema Inc., Oregon USA. MARKING CODE: C73 D1, D3: 5.6V Zener Diode (CPZ18-CMPZ5232B) D2: Schottky Diode ( CPD92-CMPD6263 ) SOT-563 CASE MAXIMUM RATINGS (SOT-563 Package) : (TA=25°C) SYMBOL


Original
PDF CEN1073 CEN1073 OT563 CPZ18-CMPZ5232B) CPD92-CMPD6263) OT-563 20-February zener 563 diode zener d1 marking C73 900 mhz schottky diode zener diode mv 5 marking code c73 sot 563 package CPD92 CPD92-CMPD6263 zener diode marking code 15
"Schottky Diode"

Abstract: CMKD6263 CMDD6263 CPD92V CMSD6263 CMPD6263 CMOD6263 Schottky diode wafer Schottky diode Die 1N6263
Text: PROCESS CPD92V Schottky Diode High Voltage Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 9.0 x 9.0 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 4.8 MILS DIAMETER Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 139,050 PRINCIPAL DEVICE TYPES CMDD6263 CMKD6263 CMLD6263 Series , 2006) PROCESS CPD92V Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY


Original
PDF CPD92V CMDD6263 CMKD6263 CMLD6263 CMOD6263 CMPD6263 CMSD6263 CMUD6263 1N6263 "Schottky Diode" CMKD6263 CMDD6263 CPD92V CMOD6263 Schottky diode wafer Schottky diode Die 1N6263
schottky diode high voltage

Abstract: diode schottky 29 CPD92V CMSD6263 CMPD6263 CMOD6263 CMLD6263 CMKD6263 CMDD6263 diode 29
Text: PROCESS CPD92V Schottky Diode High Voltage Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 9.0 x 9.0 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 4.8 MILS DIAMETER Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 139,050 PRINCIPAL DEVICE TYPES CMDD6263 CMKD6263 CMLD6263 Series , 2006) PROCESS CPD92V Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY


Original
PDF CPD92V CMDD6263 CMKD6263 CMLD6263 CMOD6263 CMPD6263 CMSD6263 CMUD6263 1N6263 schottky diode high voltage diode schottky 29 CPD92V CMOD6263 CMKD6263 CMDD6263 diode 29
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