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Central Semiconductor Corp
CPD48V-CBAT54-CM - Waffle Pack (Alt: CPD48V-CBAT54-CM)
CPD48V-CBAT54-CM ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet Americas CPD48V-CBAT54-CM Waffle Pack 0 38 Weeks 400 - - - - - More Info
Central Semiconductor Corp
CPD48V-CBAT54-CT Diode Schottky 30V 200mA Tray - Waffle Pack (Alt: CPD48V-CBAT54-CT)
CPD48V-CBAT54-CT ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet Americas CPD48V-CBAT54-CT Waffle Pack 0 3 Weeks 400 - - - - - More Info

cpd48 datasheet (2)

Part ECAD Model Manufacturer Description Type PDF
CPD48 CPD48 ECAD Model Central Semiconductor Chip Form: SCHOTTKY DIODE Original PDF
CPD48V CPD48V ECAD Model Central Semiconductor Schottky Diode High Current Schottky Diode Chip Original PDF

cpd48 Datasheets Context Search

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high current schottky diode

Abstract: Schottky Diode CPD48 Schottky diode wafer
Text: PROCESS CPD48 Central Schottky Diode TM Semiconductor Corp. High Current Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14 x 14 MILS Die Thickness 9.0 MILS Anode Bonding Pad Area 9.0 x 9.0 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 62,250 PRINCIPAL DEVICE , Fax: (631) 435-1824 www.centralsemi.com PROCESS CPD48 Typical Electrical Characteristics


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PDF CPD48 high current schottky diode Schottky Diode CPD48 Schottky diode wafer
Not Available

Abstract: No abstract text available
Text: device, please see Process CPD48 on page 881. R2 (7-August 2003) 244 Central Semiconductor


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PDF OT-363 CPD48 OT-363
diode Marking Code 53

Abstract: No abstract text available
Text: CT trr For Typical Electrical Characteristic Data for this device, please see Process CPD48 on


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PDF 100hA 100mA CPD48 13-November OD-523 OD-523 diode Marking Code 53
Not Available

Abstract: No abstract text available
Text: CPD18. . CPD41 . . CPD48.


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PDF CP108 CP117 CP147 CP176 CP188 CP191 CP192 CP195 CP206 CP207
Not Available

Abstract: No abstract text available
Text: Electrical Characteristic Data for this Device Process CPD48 , Please See Page 824. R3 (31-October 2002) 2


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PDF OD-123 CPD48, 31-October OD-123
4E diode

Abstract: MARKING 4 SOD523 marking code 4e
Text: this device, please see Process CPD48 on page 881. R0 (10-Decem ber 2002) 3 -) 2 Central TM


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PDF OD-523 CPD48 10-Decem OD-523 10-December 4E diode MARKING 4 SOD523 marking code 4e
CMLSH-4

Abstract: No abstract text available
Text: For Typical Electrical Characteristic Data for this device, please see Process CPD48 on page 881


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PDF OT-563 CPD48 05-June OT-563 CMLSH-4
Not Available

Abstract: No abstract text available
Text: Data for this device, please see Process CPD48 on page 881. 278 R2 (28-May 2003) Central I


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PDF OT-563 CPD48 28-May OT-563
Not Available

Abstract: No abstract text available
Text: For Typical Electrical Characteristic Data for this device, please see Process CPD48 on page 881


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PDF OT-23 OT-23 16-June
CP588V

Abstract: CP-392V CPD76 CPD96 CPD92 CPD91 CPD80 CPD48 CP191 CP188
Text: ) CPD48 CPD76 CPD78 CPD80 CPD83 CPD88 CPD91 CPD92 CPD96 CP188 CP191 CP192 CP305 CP307 CP309 , CP716 CP720 CP734 CP755 CP767 CP792 Page 2 of 2 CPD48V CPD76V CPD78V CPD80V CPD83V


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PDF CPD48 CPD76 CPD78 CPD80 CPD83 CPD88 CPD91 CPD92 CPD96 CP188 CP588V CP-392V CPD76 CPD96 CPD92 CPD91 CPD80 CPD48 CP191 CP188
marking code s1

Abstract: "MARKING CODE S1"
Text: CPD48 on page 881. R5 (31-October 2002) -| 9 2 Central TM Semiconductor Corp. CMDSH


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PDF 100mA CPD48 31-October OD-323 marking code s1 "MARKING CODE S1"
sot-23 MARKING CODE SP

Abstract: Marking Code .25c sot23 DIODE Sp marking code marking code r1 sot23 fr marking code sot23 marking CM sot23 marking F1 SOT23 device marking code A1 MARKING CODE 190 2002 3e
Text: this Device Process CPD48 , Please See Page 824. R1 (13-November 2002) 334 Central


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PDF OT-23 CPD48, 13-November OT-23 sot-23 MARKING CODE SP Marking Code .25c sot23 DIODE Sp marking code marking code r1 sot23 fr marking code sot23 marking CM sot23 marking F1 SOT23 device marking code A1 MARKING CODE 190 2002 3e
diode marking code RJ

Abstract: RJ1002
Text: Process CPD48 on page 881. (4-February 2004) 522 Central Semiconductor Corp. CMSSH-3E CMSSH


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PDF OT-323 OT-323 diode marking code RJ RJ1002
marking D3 SOT26

Abstract: No abstract text available
Text: Typical Electrical Characteristic Data for this device, please see Process CPD48 on page 881. R3 (6


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PDF OT-26 CPD48 OT-26 marking D3 SOT26
0C171

Abstract: SCHOTTKY DIODE SOT-143
Text: for this Device Process CPD48 , Please See Page 824. R2 (13-November 2002) -| g g Central TM


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PDF OT-143 CPD48, 13-November OT-143 0C171 SCHOTTKY DIODE SOT-143
Not Available

Abstract: No abstract text available
Text: Process CPD48 on page 881. R3 (3-December 2003) 204 Central TM Semiconductor Corp. CMFSH


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PDF OT-143 CPD48 OT-143
Not Available

Abstract: No abstract text available
Text: Typical Electrical Characteristic Data for this device, please see Process CPD48 on page 881. R3 (31


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PDF OD-123 100pA 100mA CPD48 31-October OD-123
diode 824

Abstract: No abstract text available
Text: Typical Electrical Characteristic Data for this Device Process CPD48 , Please See Page 824. R2 (13


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PDF CPD48, 13-November OD-523 OD-523 diode 824
marking sSH sot-23

Abstract: marking code 3c diode MARKING CODE SSH marking b1d
Text: Typical Electrical Characteristic Data for this device, please see Process CPD48 on page 881. R2 (4


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PDF OT-323 OT-323 marking sSH sot-23 marking code 3c diode MARKING CODE SSH marking b1d
JH MARKING CODE SCHOTTKY DIODE

Abstract: MARKING 3D0 marking 6 marking code D23
Text: V V pF ns For Typical Electrical Characteristic Data for this device, Dlease see Process CPD48 on


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PDF 100mA) CPD48 OT-363 T-363 JH MARKING CODE SCHOTTKY DIODE MARKING 3D0 marking 6 marking code D23
ED marking code diode

Abstract: D95E
Text: Characteristic Data for this device, please see Process CPD48 on page 881. R2 (6-August 2003) 300 Central


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PDF OT-23 OT-23 ED marking code diode D95E
CPD48V

Abstract: No abstract text available
Text: PROCESS CPD48V Schottky Diode High Current Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14 x 14 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 9.0 x 9.0 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 59,940 PRINCIPAL DEVICE TYPES CMPSH-3 Series CMSSH-3 Series CMXSH , ) 435-1824 www.centralsemi.com R2 (8-October 2008) PROCESS CPD48V Typical Electrical


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PDF CPD48V CPD48V
UJT 2n3904

Abstract: transistor 2N4033 mj15003 equivalent ujt 2N6027 2n4209 datasheet mj15004 2N4393 transistor 2N5401 MJ15003 MJ15004 BAV45
Text: Principal Device High Voltage New CPD92X 1N6263 High Current New CPD48V CPD82X CPD98V


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high current schottky diode

Abstract: CPD48V "Schottky Diode" DIODE 3T Schottky diode wafer
Text: PROCESS CPD48V Schottky Diode High Current Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14 x 14 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 9.0 x 9.0 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 62,250 PRINCIPAL DEVICE TYPES CMPSH-3 Series CMSSH-3 Series CMXSH , ) 435-1824 www.centralsemi.com R0 (13- February 2006) PROCESS CPD48V Typical Electrical


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PDF CPD48V high current schottky diode CPD48V "Schottky Diode" DIODE 3T Schottky diode wafer
2010 - DIODE 720

Abstract: "Schottky Diode" DIODE R3 CPD48V high current schottky diode
Text: PROCESS CPD48V Schottky Diode High Current Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 13.8 x 13.8 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 9.0 x 9.0 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER 89,720 PRINCIPAL DEVICE TYPES CMPSH-3 Series CMSSH-3 Series CMXSH , CPD48V Typical Electrical Characteristics R3 (22-March 2010) w w w. c e n t r a l s e m i . c o m


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PDF CPD48V 22-March DIODE 720 "Schottky Diode" DIODE R3 CPD48V high current schottky diode
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