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Mattson Technology (16)

Semiconductor Wafer Processing Equipment

Mattson Technology designs, manufactures, and markets semiconductor wafer processing equipment used in the fabrication of integrated circuits (ICs or chips). Mattson is a leading supplier of dry strip and rapid thermal processing (RTP) equipment to the global semiconductor industry.

Showing 1 to 16 of 16 entries
Datasheet PDF or ZIP
RTP Reg Form - RTP RTP Reg Form : RTP (PDF)
JVSTarticle - N2 downstream plasma - Plasma JVSTarticle : N2 downstream plasma (PDF)
TNS9611-002 - Inductively Coupled Plasma for Highly Efficient and Low Damage Resist Stripping - Plasma TNS9611-002 : Inductively Coupled Plasma for Highly Efficient and Low Damage Resist Stripping (PDF)
HDIS ICP Savas 0207 - Meeting Requirements for Dry Strip of High-Dose Implated Resist at the 45nm Node - Plasma HDIS ICP Savas 0207 : Meeting Requirements for Dry Strip of High-Dose Implated Resist at the 45nm Node (PDF)
1998 ICPSM George Guerra - Characterization of a Selectable-Mode Inductively Coulpled Plasma (ICPSM) Source for Advanced Dry Residue Removal Applications - Plasma 1998 ICPSM George Guerra : Characterization of a Selectable-Mode Inductively Coulpled Plasma (ICPSM) Source for Advanced Dry Residue Removal Applications (PDF)
1997 IMAPS Via Guerra - Damage-Free, All-Dry Via. Etch Resist and Residue Removal Processes - Plasma 1997 IMAPS Via Guerra : Damage-Free, All-Dry Via. Etch Resist and Residue Removal Processes (PDF)
2002 SWest Guerra Wiesnoski - Implementation of Plasma Processing into BEOL with Organic Low-k Dielectrics - Plasma 2002 SWest Guerra Wiesnoski : Implementation of Plasma Processing into BEOL with Organic Low-k Dielectrics (PDF)
3-in-1 SEMI-ISTC05 Xu - Process Integration of Photoresist Stripping, Barrier Removal and Copper Treatment for Advanced BEOL Applications - Plasma 3-in-1 SEMI-ISTC05 Xu : Process Integration of Photoresist Stripping, Barrier Removal and Copper Treatment for Advanced BEOL Applications (PDF)
2002 UCPSS VCauwenberghe - Resist Strip and Cu Diffusion Barrier Etch In Cu BEOL Integration Schemes in a Mattson Highlands Chamber - Plasma 2002 UCPSS VCauwenberghe : Resist Strip and Cu Diffusion Barrier Etch In Cu BEOL Integration Schemes in a Mattson Highlands Chamber (PDF)
JF2007 JVST PRS ULKD EHLDs Xu - Study of Plasma-Induced Damage of Ultralow-k Dielectric Films During Photoresist Stripping - Plasma JF2007 JVST PRS ULKD EHLDs Xu : Study of Plasma-Induced Damage of Ultralow-k Dielectric Films During Photoresist Stripping (PDF)
2004 MICRO FS Savas George - Using an ICP-Based Strip System to Perform Resist and Barrier-Layer Removal in Copper Low-k Processes - Plasma 2004 MICRO FS Savas George : Using an ICP-Based Strip System to Perform Resist and Barrier-Layer Removal in Copper Low-k Processes (PDF)
2004 RTP Keynote 2004 Vf2 - RTP Applications and Technology Options for the Sub-45 nm Nodes - Thermal 2004 RTP Keynote 2004 Vf2 : RTP Applications and Technology Options for the Sub-45 nm Nodes (PDF)
SChina 2004 Tay Hu - UV-Enhanced Oxynitridation of Silicon Substrates - Thermal SChina 2004 Tay Hu : UV-Enhanced Oxynitridation of Silicon Substrates (PDF)
2003 ECS 886 Lerch SPE Paper - Rapid Thermal Solid Phase Epitaxy Annealing for Ultra-Shallow Junction Formation - Thermal 2003 ECS 886 Lerch SPE Paper : Rapid Thermal Solid Phase Epitaxy Annealing for Ultra-Shallow Junction Formation (PDF)
2001 ECS 3-2001 ZrO2 paper Yaozhi rev - Physical Characterization of ZrO2 Films On Silicon After Rapid Thermal Anneal - Thermal 2001 ECS 3-2001 ZrO2 paper Yaozhi rev : Physical Characterization of ZrO2 Films On Silicon After Rapid Thermal Anneal (PDF)
2001 JVST B 3-2001 NiSi paper Yaozhi UNC - In Situ Real-Time Studies of Nickel Silicide Phase Formation - Thermal 2001 JVST B 3-2001 NiSi paper Yaozhi UNC : In Situ Real-Time Studies of Nickel Silicide Phase Formation (PDF)

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