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Central Semiconductor Corp
CMKT5089M10 TR Trans BJT Array NPN/NPN 25V 50mA 6-Pin SOT-363 T/R - Tape and Reel (Alt: CMKT5089M10 TR)
CMKT5089M10 TR ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet Americas CMKT5089M10 TR Reel 0 3,000 - - - - - More Info
Central Semiconductor Corp
CMKT5089M10 TR PBFREE Transistor BJT Array Dual NPN 25V 50mA 6-Pin SOT-363 T/R - Tape and Reel (Alt: CMKT5089M10 TR PBFREE)
CMKT5089M10 TR PBFREE ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet Americas CMKT5089M10 TR PBFREE Reel 0 3,000 - - - - $0.39945 More Info

cmkt5089m10 datasheet (3)

Part ECAD Model Manufacturer Description Type PDF
CMKT5089M10 CMKT5089M10 ECAD Model Central Semiconductor SMD Small Signal Transistor Dual NPN Low Noise Amplifier Original PDF
CMKT5089M10 CMKT5089M10 ECAD Model Central Semiconductor DUAL NPN SILICON MATCHED TRANSISTOR Original PDF
CMKT5089M10 TR CMKT5089M10 TR ECAD Model Central Semiconductor Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays - TRANS 2NPN 25V 0.05A SOT363 Original PDF

cmkt5089m10 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2003 - C9M0

Abstract: MARKING CODE c9m0 SOT363
Text: CMKT5089M10 SURFACE MOUNT ULTRAminiTM DUAL NPN SILICON MATCHED hFE TRANSISTORS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT5089M10 consists of two individual, isolated 5089 NPN silicon transistors with matched hFE. This ULTRAminiTM device is manufactured by the epitaxial planar process and epoxy molded in an SOT-363 surface mount package. The CMKT5089M10 has been designed , . R1 (13-November 2002) Central TM CMKT5089M10 SURFACE MOUNT ULTRAminiTM DUAL NPN SILICON


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PDF CMKT5089M10 OT-363 13-November C9M0 MARKING CODE c9m0 SOT363
sot-363 MARKING l0

Abstract: No abstract text available
Text: CMKT5089M10 SURFACE MOUNT ULTRAminiTM DUAL NPN SILICON MATCHED hpE TRANSISTORS Central DESCRIPTION: Semiconductor Corp. The CENTRAL SEMICONDUCTOR CMKT5089M10 consists of two individual, isolat ed 5089 NPN silicon transistors with matched hpE- This ULTRAminiTMdevice is manufactured by the epitaxial planar process and epoxy molded in an SOT-363 surface mount package. The CMKT5089M10 has been , Central" Semiconductor Corp. CMKT5089M10 SURFACE MOUNT ULTRAminiTM DUAL NPN SILICON MATCHED hpE


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PDF CMKT5089M10 OT-363 13-November OT-363 sot-363 MARKING l0
2010 - "dual TRANSISTORs" sot363

Abstract: CMKT5089M10
Text: CMKT5089M10 SURFACE MOUNT DUAL NPN SILICON MATCHED hFE TRANSISTORS SOT-363 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous , w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT5089M10 consists of , package. The CMKT5089M10 has been designed for applications requiring high gain and low noise. MARKING , R4 (13-January 2010) CMKT5089M10 SURFACE MOUNT DUAL NPN SILICON MATCHED hFE TRANSISTORS SOT


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PDF CMKT5089M10 OT-363 OT-363 CMKT5089M10 13-January "dual TRANSISTORs" sot363
2003 - C9M0

Abstract: CMKT5089M10
Text: Central CMKT5089M10 SURFACE MOUNT ULTRAminiTM DUAL NPN SILICON MATCHED hFE TRANSISTORS SOT-363 CASE MAXIMUM RATINGS: (TA=25°C) TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT5089M10 consists of two (2) individual, isolated 5089 NPN silicon transistors with matched , SOT-363 surface mount package. The CMKT5089M10 has been designed for applications requiring high , ) Central TM Semiconductor Corp. CMKT5089M10 SURFACE MOUNT ULTRAminiTM DUAL NPN SILICON MATCHED


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PDF CMKT5089M10 OT-363 CMKT5089M10 C9M0
2008 - dual sot363

Abstract: C9M0 CMKT5089M10
Text: CMKT5089M10 Central TM Semiconductor Corp. SURFACE MOUNT ULTRAminiTM DUAL NPN SILICON MATCHED hFE TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT5089M10 consists of two (2) individually isolated 5089 NPN silicon transistors with matched hFE. This ULTRAminiTM device is manufactured , CMKT5089M10 has been designed for applications requiring high gain and low noise. MARKING CODE: C9M0 SOT , UNITS mV R3 (21-November 2008) Central TM Semiconductor Corp. CMKT5089M10 SURFACE


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PDF CMKT5089M10 OT-363 CMKT5089M10 21-November dual sot363 C9M0
Not Available

Abstract: No abstract text available
Text: CMKT5089M10 SURFACE MOUNT DUAL NPN SILICON MATCHED hFE TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT5089M10 consists of two (2) individually isolated 5089 NPN silicon transistors with matched hFE. This ULTRAmini™ device is manufactured by the epitaxial planar process and epoxy molded in an SOT-363 surface mount package. The CMKT5089M10 has been , 5.0 UNITS mV R4 (13-January 2010) CMKT5089M10 SURFACE MOUNT DUAL NPN SILICON MATCHED hFE


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PDF CMKT5089M10 OT-363 CMKT5089M10 OT-363 13-January
Not Available

Abstract: No abstract text available
Text: CMKT5089M10 SURFACE MOUNT ULTRAminiTM DUAL NPN SILICON MATCHED hpE TRANSISTORS Central Semiconductor Corp. ULTRAmini DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT5089M10 consists of two (¿) individual, iso lated 5089 NPN silicon transistors with matched hpE- This ULTRAminiTM device is mapufactured by the epitaxial planar process and epoxy molded in an SOT-363 surface mount package. The CMKT5089M10 , page 816. R2 (7-August 2003) 256 Central" Semiconductor Corp. CMKT5089M10 s u rfa c e m ount


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PDF CMKT5089M10 OT-363 CP188 OT-363
2002 - TRANSISTOR MARKING 06

Abstract: CMKT5089M10 SOT-363 marking 05 dual npn
Text: Central CMKT5089M10 TM Semiconductor Corp. ULTRAminiTM DUAL NPN SILICON MATCHED TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT5089M10 is a Dual, NPN silicon matched transistor manufactured by the epitaxial planar process, epoxy molded in an ULTRAminiTM SOT-363 surface mount package. This device is designed for applications requiring high gain and low noise. Marking Code is C9M0 , Semiconductor Corp. CMKT5089M10 DUAL NPN SILICON MATCHED TRANSISTOR SOT-363 CASE - MECHANICAL OUTLINE


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PDF CMKT5089M10 CMKT5089M10 OT-363 06-May TRANSISTOR MARKING 06 SOT-363 marking 05 dual npn
102 TRANSISTOR

Abstract: CMKT5089M10
Text: PROCESS CP388X Small Signal Transistor NPN- Low Noise Amplifier Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 13 x 13 MILS Die Thickness 5.9 MILS Base Bonding Pad Area 3.9 x 3.9 MILS Emitter Bonding Pad Area 5.4 x 5.4 MILS Top Side Metalization Al-Si - 17,000Å Back Side Metalization Au - 12,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER 102,852 PRINCIPAL DEVICE TYPES CMKT5089M10 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631


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PDF CP388X CMKT5089M10 102 TRANSISTOR CMKT5089M10
a42e

Abstract: IC 7410 sot-89 A63 CZT900K npn 2907A A92E 2222a A77 SOT23 2222ae 3906 npn
Text: CMPT5089 CMPT930 5088 5088E PNP CMKT5089M10 (2x Matched) 5089 930 NPN 5089


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PDF OD-923 OT-923 OT-953 OD-523 OT-523 OT-563 OD-323 OT-323 OT-363 OD-123 a42e IC 7410 sot-89 A63 CZT900K npn 2907A A92E 2222a A77 SOT23 2222ae 3906 npn
transistor 3904

Abstract: transistor 2222a transistor 2222a sot 89 2907a TRANSISTOR PNP sot 23 transistor 70.2 pnp transistor 800v 2907A PNP bipolar transistors transistor 5 Amp 700 volt 3906 npn transistor A92 SOT 89
Text: · CMKT3946 · CMKT5088 · CMKT5087 · CMKT5078 · CMKT5089M10 - 2 x 2222A NPN Transistors 2 x 2907A


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PDF OT-23 CMPT491E CMPT591E OT-23 OT-223 CMPTA46 CMPTA96 CZTA46 CZTA96 transistor 3904 transistor 2222a transistor 2222a sot 89 2907a TRANSISTOR PNP sot 23 transistor 70.2 pnp transistor 800v 2907A PNP bipolar transistors transistor 5 Amp 700 volt 3906 npn transistor A92 SOT 89
part MARKING k48

Abstract: marking bc p28 CM0Z15L W4W MARKING CMSD4448 CMZ5945B CMPSH-3SE marking code ca2 CM0Z11V CMZ5936B
Text: CMPZ5245B P6SMB8.2A 1.5SMC8.2A 1.5SMC8.2CA P6SMB8.2CA CMPZ5246B CMPZ5247B CMPZ5248B CMPZ5249B CMKT5089M10


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PDF CMOD2004 CMLD2004 CMLD2004A CMLD2004C CMLD2004S CMLD2004DO BC846A CMSZ5250B CMST3904 BC846B part MARKING k48 marking bc p28 CM0Z15L W4W MARKING CMSD4448 CMZ5945B CMPSH-3SE marking code ca2 CM0Z11V CMZ5936B
BAT 13003 D

Abstract: SMBJ5.OCA bat 13003 em 434 CMHD3595 CMR1U-02M CMSD4448 CMPS5064 CMSH3-40 CMPSH-3SE
Text: CMKT5087 CMKT5088 CMKT5089M10 CMLD2004 CMLD2004A CMLD2004C CMLD2004S CMLD6263 CMLD6263DO CMLDM7002A CMLSH , CMKT3904 CMKT3906 CMKT3946 CMKT5078 CMKT5087 CMKT5088 CMKT5089M10 CMLD2004 CMLD2004A CMLD2004C CMLD2004S


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PDF 30WQ03F 30WQ04F 30WQ05F 30WQ06F 50WF10F 50WF20F 50WF30F 50WF40F BAL99 BAR42 BAT 13003 D SMBJ5.OCA bat 13003 em 434 CMHD3595 CMR1U-02M CMSD4448 CMPS5064 CMSH3-40 CMPSH-3SE
TRANSISTOR NPN BA RV SOT - 89

Abstract: bc816 transistor ZT 2222a BO338 2222A transistors CMPSH-3SE CMPZ4124 BG SOT26 CMZ5945B CMR1U-02M
Text: Transistor CMKT5089M10 Dual Matched NPN Transistors 35 50 35 50 30 50 30 50 4.5 3.0 4.5 30 50 50 50 50 20 35 , 0.5 10 4.0 50 20 NOTE: CMKT5089M10 is Dual NPN Transistor matched for hep ± 10% 53


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PDF CQ89N CQ89DS CQ89MS CQ89NS OT-89 CMPSS061 CMPS5062 CMPS5063 CMPS5064 CZS5064 TRANSISTOR NPN BA RV SOT - 89 bc816 transistor ZT 2222a BO338 2222A transistors CMPSH-3SE CMPZ4124 BG SOT26 CMZ5945B CMR1U-02M
CMZ5945B

Abstract: CMZ5947B CMPZ4124 CMZ5930B CMZ5936B CMPZ4614 CMZ5926B CMZ5927B CMZ5931B CMZ5928B
Text: PNP Transistors CMKT5078 1 x 5088 NPN Transistor 1 x 5087 PNP Transistor CMKT5089M10 Dual Matched NPN Transistors 30 25 4.5 50 15 400 NOTE: CMKT5089M10 is Dual NPN


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PDF OT-23 350mW CMPT8099 CMPT2222A OT-23 OT-223 OT-89 CQ89D CQ89DS CMPS5061 CMZ5945B CMZ5947B CMPZ4124 CMZ5930B CMZ5936B CMPZ4614 CMZ5926B CMZ5927B CMZ5931B CMZ5928B
CMSD4448

Abstract: CMR1U-02M CMSH3-40 CMPZ4124 CMXZ2V4TO CMXZ47VTO CMSH3-100 CMPZDC47V BST60 em 328
Text: CMKT3906 CMKT3946 CMKT5078 CMKT5087 CMKT5088 CMKT5089M10 CMLD2004 CMLD2004A 168 170 224 226 , €¢ CMKT5088 CMKT5089M10 CMLD2004 CMLD2004A C ode 77 57 57 63 59 57 59 59 64 EM EM 64


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PDF 1MN10 CMXD4448 10BQ015 CMSH1-20ML 10MF2 CMR1U-02M 10MQ040 CMSH1-40M 10MQ060 CMSH1-60M CMSD4448 CMR1U-02M CMSH3-40 CMPZ4124 CMXZ2V4TO CMXZ47VTO CMSH3-100 CMPZDC47V BST60 em 328
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