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J2014003L002 GE Critical Power J2014003L002 I2C SHELF FOR CP300
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GP100H3M54TEZ GE Critical Power GP100 6 kW True Three Phase Rectifier, 110A rectifier with isolated dual I2C communications 54V

circuit using irf640 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1999 - irf640

Abstract: IRF640 P CHANNEL MOSFET IRF640 morocco circuit using irf640 IRF64 power MOSFET IRF640 fp irf640f stmicroelectronics datecode TO-220 0118mm
Text: Characteristics 5/9 IRF640 /FP Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive , Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 IRF640 /FP TO , ® IRF640 IRF640FP N - CHANNEL 200V - 0.150 - 18A TO-220/TO-220FP MESH OVERLAY TM MOSFET TYPE IRF640 IRF640F P s s s s V DSS 200 V 200 V R DS(on) < 0.18 < 0.18 ID 18 A 18 A TYPICAL RDS , 1 2 1 2 3 DESCRIPTION This power MOSFET is designed using he company's consolidated strip


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PDF IRF640 IRF640FP O-220/TO-220FP IRF640F O-220 O-220FP IRF640 P CHANNEL MOSFET IRF640 morocco circuit using irf640 IRF64 power MOSFET IRF640 fp stmicroelectronics datecode TO-220 0118mm
1999 - power MOSFET IRF640 fp

Abstract: irf640 circuit using irf640 power MOSFET IRF640 IRF640FP for irf640 IRF640 mosfet stmicroelectronics datecode TO-220
Text: Source-drain Diode Forward Characteristics 5/9 IRF640 /FP Fig. 1: Unclamped Inductive Load Test Circuit , IRF640 IRF640FP ® N - CHANNEL 200V - 0.150 - 18A TO-220/TO-220FP MESH OVERLAYTM MOSFET TYPE V DSS R DS(on) ID IRF640 IRF640FP 200 V 200 V < 0.18 < 0.18 18 A 18 A , CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION This power MOSFET is designed using he company , Symbol Parameter Value IRF640 V DS V DGR V GS Unit IRF640FP Drain-source Voltage (V GS


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PDF IRF640 IRF640FP O-220/TO-220FP O-220 power MOSFET IRF640 fp irf640 circuit using irf640 power MOSFET IRF640 IRF640FP for irf640 IRF640 mosfet stmicroelectronics datecode TO-220
1998 - irf640

Abstract: IRF640FP IRF640 P CHANNEL MOSFET
Text: operating area 3/7 IRF640 /FP Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped , Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/7 IRF640 , IRF640 IRF640FP ® N - CHANNEL 200V - 0.150 - 18A - TO-220/FP MESH OVERLAYTM MOSFET TYPE V DSS s s s s R DS(on) ID 200 V 200 V IRF640 IRF640F P < 0.18 < 0.18 18 , CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION This power MOSFET is designed using he company


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PDF IRF640 IRF640FP O-220/FP IRF640F O-220 irf640 IRF640FP IRF640 P CHANNEL MOSFET
2008 - irf640

Abstract: hexfet irf640 IRF640 circuit
Text: IRF640 , SiHF640 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , SiHF640-E3 IRF640 SiHF640 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER , apply Document Number: 91036 S-81241-Rev. A, 07-Jul-08 www.vishay.com 1 IRF640 , SiHF640 Vishay , -81241-Rev. A, 07-Jul-08 IRF640 , SiHF640 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise , . Temperature Document Number: 91036 S-81241-Rev. A, 07-Jul-08 www.vishay.com 3 IRF640 , SiHF640


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PDF IRF640, SiHF640 O-220 12-Mar-07 irf640 hexfet irf640 IRF640 circuit
2006 - IRF640

Abstract: IRF640FP ST IRF640 IRF640 circuit JESD97 power MOSFET IRF640 fp IRF640 morocco
Text: IRF640 IRF640FP N-channel 200V - 0.15 - 18A TO-220/TO-220FP Mesh overlayTM Power MOSFET General features Type VDSS RDS(on) ID IRF640 200V <0.18 18A IRF640FP 200V <0.18 , using the company's consolidated strip layout-based MESH OVERLAYTM process. This technology matches , Package Packaging IRF640 IRF640 TO-220 Tube IRF640FP IRF640FP TO-220FP Tube September 2006 Rev 9 1/14 www.st.com 14 Contents IRF640 - IRF640FP Contents 1


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PDF IRF640 IRF640FP O-220/TO-220FP O-220 O-220FP IRF640 IRF640FP ST IRF640 IRF640 circuit JESD97 power MOSFET IRF640 fp IRF640 morocco
2006 - IRF640

Abstract: IRF640 applications note circuit using irf640 power MOSFET IRF640 IRF640FP IRF640 mosfet JESD97
Text: Ob - ro P s) t( IRF640 - IRF640FP 3 Test circuit Test circuit Figure 14 , IRF640 IRF640FP N-channel 200V - 0.15 - 18A TO-220/TO-220FP Mesh overlayTM Power MOSFET General features Type VDSS RDS(on) ID IRF640 200V <0.18 18A IRF640FP 200V <0.18 , minimized 3 1 3 2 1 TO-220 TO-220FP Description This power MOSFET is designed using , Packaging IRF640 IRF640 TO-220 Tube IRF640FP IRF640FP TO-220FP Tube September


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PDF IRF640 IRF640FP O-220/TO-220FP O-220 O-220FP IRF640 IRF640 applications note circuit using irf640 power MOSFET IRF640 IRF640FP IRF640 mosfet JESD97
1999 - irf640

Abstract: IRF640 P CHANNEL MOSFET IRF P CHANNEL MOSFET TO-220 P Channel Power MOSFET IRF IRF640 morocco IRF640 circuit DI L6 IRF640FP power MOSFET IRF640 fp IRF n CHANNEL MOSFET
Text: Circuit For Inductive Load Switching And Diode Recovery Times 6/9 IRF640 /FP TO-220 MECHANICAL , IRF640 IRF640FP ® N - CHANNEL 200V - 0.150 - 18A TO-220/TO-220FP MESH OVERLAYTM MOSFET TYPE V DSS s s s s R DS(on) ID 200 V 200 V IRF640 IRF640FP < 0.18 < 0.18 , CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION This power MOSFET is designed using he company , Symbol Parameter Value IRF640 V DS V DGR V GS Un it IRF 640F P Drain-source Voltage (V


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PDF IRF640 IRF640FP O-220/TO-220FP O-220 irf640 IRF640 P CHANNEL MOSFET IRF P CHANNEL MOSFET TO-220 P Channel Power MOSFET IRF IRF640 morocco IRF640 circuit DI L6 IRF640FP power MOSFET IRF640 fp IRF n CHANNEL MOSFET
1999 - IRF640

Abstract: IRF640FP IRF64 IRF640 P CHANNEL MOSFET IRF640 morocco
Text: operating area 3/7 IRF640 /FP Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped , Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/7 IRF640 , IRF640 IRF640FP ® N - CHANNEL 200V - 0.150 - 18A - TO-220/FP MESH OVERLAYTM MOSFET TYPE V DSS s s s s R DS(on) ID 200 V 200 V IRF640 IRF640F P < 0.18 < 0.18 18 , CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION This power MOSFET is designed using he company


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PDF IRF640 IRF640FP O-220/FP IRF640F O-220 IRF640 IRF640FP IRF64 IRF640 P CHANNEL MOSFET IRF640 morocco
1996 - IRF640

Abstract: IRF640FI IRF640 morocco
Text: Waveforms Switching Time Test Circuit Gate Charge Test Circuit 6/9 IRF640 /FI TO , IRF640 IRF640FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS s s s s R DS( on) ID 200 V 200 V IRF640 IRF640FI < 0.18 < 0.18 18 A 10 A TYPICAL RDS , DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value IRF640 VD S V DG R V GS Unit , limited by safe operating area November 1996 1/9 IRF640 /FI THERMAL DATA TO-220 R thj-cas e


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PDF IRF640 IRF640FI 100oC O-220 ISOWATT220 IRF640 IRF640FI IRF640 morocco
IRF640 applications note

Abstract: IRF640 circuit
Text: IRF640 , SiHF640 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , Lead (Pb)-free SnPb TO-220AB IRF640PbF SiHF640-E3 IRF640 SiHF640 ABSOLUTE MAXIMUM RATINGS (TC = 25 , DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF640 , SiHF640 , THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF640 , TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF640 , SiHF640 Vishay Siliconix


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PDF IRF640, SiHF640 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF640 applications note IRF640 circuit
2009 - IRF640PBF

Abstract: IRF640 SiHF640 linear applications of power MOSFET IRF640 irf640 Vishay SiHF640-E3
Text: -Jul-08 IRF640 , SiHF640 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit , IRF640 , SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) · , MOSFET ORDERING INFORMATION TO-220 IRF640PbF SiHF640-E3 IRF640 SiHF640 Package Lead (Pb)-free , -Jul-08 www.vishay.com 1 IRF640 , SiHF640 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP , -81241-Rev. A, 07-Jul-08 IRF640 , SiHF640 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise


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PDF IRF640, SiHF640 O-220 O-220 50lectual 18-Jul-08 IRF640PBF IRF640 linear applications of power MOSFET IRF640 irf640 Vishay SiHF640-E3
2012 - IRF640 applications note

Abstract: IRF640 circuit IRF640 n-channel MOSFET
Text: IRF640 , SiHF640 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , Lead (Pb)-free SnPb TO-220AB IRF640PbF SiHF640-E3 IRF640 SiHF640 ABSOLUTE MAXIMUM RATINGS (TC = 25 , DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF640 , SiHF640 , THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF640 , TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF640 , SiHF640 Vishay Siliconix


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PDF IRF640, SiHF640 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF640 applications note IRF640 circuit IRF640 n-channel MOSFET
IRF640

Abstract: SiHF640 SiHF640-E3 linear applications of power MOSFET IRF640 IRF640 applications note IRF640 application note
Text: IRF640 , SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) · , S N-Channel MOSFET ORDERING INFORMATION TO-220AB IRF640PbF SiHF640-E3 IRF640 SiHF640 , DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF640 , SiHF640 , FORTH AT www.vishay.com/doc?91000 IRF640 , SiHF640 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C , DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF640 , SiHF640


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PDF IRF640, SiHF640 2002/95/EC O-220AB O-220AB 11-Mar-11 IRF640 SiHF640-E3 linear applications of power MOSFET IRF640 IRF640 applications note IRF640 application note
RF640

Abstract: irf640 IRF640 applications note IRF641 RF1S640SM9A IRF643 RF643 RF1S640 IRF640 circuit TA17422
Text:  IRF640 , IRF641, IRF642, .e-,conductor ¡RF643, RF1S640, RF1S640SM 16A and 18A, 150V and 200V , BRAND IRF640 TO-220AB IRF640 IRF641 TO-220AB IRF641 IRF642 TO-220AB IRF642 IRF643 TO-220AB IRF643 , 1998 . File Number 1585.4 IRF640 , IRF641, ÌRF642, IRF643, RF1S640, RF1S640SM Absolute Maximum Ratings Tc = 25°c, Unless Otherwise Specified IRF640 , RF1S640, RF1S640SM IRF641 IRF642 IRF643 UNITS , SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage IRF640 , IRF642, RF1S640


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PDF IRF640, IRF641, IRF642, RF643, RF1S640, RF1S640SM TB334 IRF640 O-220AB IRF640 RF640 IRF640 applications note IRF641 RF1S640SM9A IRF643 RF643 RF1S640 IRF640 circuit TA17422
1994 - IRF640 morocco

Abstract: irf640 IRF640 applications note IRF640FI schematic diagram UPS equivalent IRF640 FI schematic diagram UPS 600 Power free
Text: Circuit 6/6 IRF640 /FI TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN , IRF640 IRF640FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF640 IRF640FI s s , ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value IRF640 VD S V DG R V GS Unit IRF640FI , operating area July 1993 1/6 IRF640 /FI THERMAL DATA TO-220 R thj-cas e Rthj- amb R th c-s Tl , . 6.5 13 1600 270 50 Max. Unit S 2100 350 70 pF pF pF IRF640 /FI ELECTRICAL


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PDF IRF640 IRF640FI 100oC O-220 ISOWATT220 IRF640 morocco irf640 IRF640 applications note IRF640FI schematic diagram UPS equivalent IRF640 FI schematic diagram UPS 600 Power free
Not Available

Abstract: No abstract text available
Text: Characteristics GC66980 IRF640 /FP Fig. 1 : Unclamped Inductive Load Test Circuit Fig. 2: Unclamped , Circuit Fig. 5 : Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 IRF640 , IRF640 IRF640FP N - CHANNEL 200V - 0.150« - 18A TO-220/TO-220FP MESH OVERLAY™ MOSFET TYPE , INTRINSIC CAPACITANCES . GATE CHARGE MINIMIZED DESCRIPTION This power MOSFET is designed using he , s s , T j < T jm a x 1/9 IRF640 /FP THERMAL DATA TO -220 R e s is ta n c e J u n c tio


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PDF IRF640 IRF640FP O-220/TO-220FP IRF640/FP O-22QFP
IRF640FI

Abstract: GC525
Text: ¿57 SGS-THOMSON IRF640 IRF640FI N- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE Vdss RDS(on) Id IRF640 IRF640FI 200 V 200 V < 0.18 a <0.18 0. 18 A 10 A . TYPICAL RDs(on) = 0.145 Q. . AVALANCHE , -220 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM a (2) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit IRF640 , operating area November 1996 1/9 IRF640 /FI THERMAL DATA TO-220 ISOWATT220 Rthj-case Thermal Resistance , 1600 270 50 2100 350 70 PF PF PF 2/9 /w SGS-THOMSON 6siieR®iiLii£irR®(iaies IRF640 /FI ELECTRICAL


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PDF IRF640 IRF640FI O-220 ISOWATT220 IRF640FI IRF640/FI ISOWATT22Q GC525
2011 - Not Available

Abstract: No abstract text available
Text: IRF640 , SiHF640 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , Lead (Pb)-free SnPb TO-220AB IRF640PbF SiHF640-E3 IRF640 SiHF640 ABSOLUTE MAXIMUM RATINGS (TC = 25 , DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF640 , SiHF640 , THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF640 , TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF640 , SiHF640 Vishay Siliconix


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PDF IRF640, SiHF640 2002/95/EC O-220AB 11-Mar-11
2013 - Not Available

Abstract: No abstract text available
Text: ?91000 IRF640 , SiHF640 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit , IRF640 , SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â , IRF640 SiHF640 Package Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless , DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF640 , SiHF640 Vishay Siliconix THERMAL RESISTANCE , TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF640 , SiHF640 Vishay Siliconix


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PDF IRF640, SiHF640 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
2001 - linear applications of power MOSFET IRF640

Abstract: power MOSFET IRF640 for irf640 IRF640 applications note irf640 IRF640 application note IRF640 field-effect power transistor RF1S640SM9A RF1S640SM TA17422
Text: IRF640 , RF1S640, RF1S640SM Data Sheet January 2002 18A, 200V, 0.180 Ohm, N-Channel Power , to PC Boards" Symbol BRAND IRF640 TO-220AB RF1S640 TO-262AA RF1S640 RF1S640SM TO-263AB D IRF640 RF1S640 G NOTE: When ordering, use the entire part number. Add the , DRAIN GATE IRF640 , RF1S640, RF1S640SM Rev. B IRF640 , RF1S640, RF1S640SM TC = 25oC, Unless , Tpkg IRF640 , RF1S640, RF1S640SM 200 200 18 11 72 ±20 125 1.0 580 -55 to 150 UNITS V V


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PDF IRF640, RF1S640, RF1S640SM TA17422. linear applications of power MOSFET IRF640 power MOSFET IRF640 for irf640 IRF640 applications note irf640 IRF640 application note IRF640 field-effect power transistor RF1S640SM9A RF1S640SM TA17422
2008 - 200 Amp bridge mosfet

Abstract: circuit using irf640 AD7794 AD7795 07488 irf640 Current source IRF640 applications note AN-968 AD8610ARZ
Text: Figure 5 uses a control loop to set the gate voltage of a MOSFET ( IRF640 N-channel). The circuit in , voltage MOSFET is used, like the IRF640 , which has a 200 V absolute maximum rating, then this circuit , R2 10 D1 10k Figure 5. Current Sink Using IRF640 MOSFET, 1000 mA C D2 1 , that are available to designers when designing current sources using ICs from Analog Devices, Inc. It , option for a current source is an op amp driven circuit is shown in Figure 3. The AD8610 op amp is a


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PDF AN-968 AD7794/AD7795 AD7794 AN07488-0-10/08 200 Amp bridge mosfet circuit using irf640 AD7795 07488 irf640 Current source IRF640 applications note AN-968 AD8610ARZ
Not Available

Abstract: No abstract text available
Text: ?91000 IRF640 , SiHF640 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit , IRF640 , SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â , IRF640 SiHF640 Package Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless , DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF640 , SiHF640 Vishay Siliconix THERMAL RESISTANCE , TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF640 , SiHF640 Vishay Siliconix


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PDF IRF640, SiHF640 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
2001 - IRF640 applications note

Abstract: irf640 RF1S640SM9A TA17422 power MOSFET IRF640 RF1S640 RF1S640SM TB334
Text: IRF640 , RF1S640SM Data Sheet June 1999 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs Title , Components to PC Boards" Symbol BRAND IRF640 wer OSTs) uthor 1585.5 Features These are , integrated circuits. File Number TO-220AB RF1S640SM TO-263AB D IRF640 RF1S640 G NOTE , ) er () OCI O frk ©2001 Fairchild Semiconductor Corporation IRF640 , RF1S640SM Rev. A IRF640 , RF1S640SM TC = 25oC, Unless Otherwise Specified Absolute Maximum Ratings IRF640 , RF1S640SM


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PDF IRF640, RF1S640SM TA17422. TB334 IRF640 RF1S640SM IRF640 applications note irf640 RF1S640SM9A TA17422 power MOSFET IRF640 RF1S640 TB334
1999 - IRF640 applications note

Abstract: irf640 RF1S640SM9A TB334 TA17422 RF1S640 RF1S640SM IRF640 INTERSIL
Text: IRF640 , RF1S640SM Data Sheet 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs These are , Components to PC Boards" Symbol BRAND IRF640 TO-220AB RF1S640SM TO-263AB D IRF640 , ://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRF640 , RF1S640SM TC = 25oC, Unless Otherwise Specified Absolute Maximum Ratings IRF640 , RF1S640SM 200 200 18 11 72 ±20 125 1.0 , RJA Free Air Operation, IRF640 - - 62 oC/W RJA RF1S640SM Mounted on FR-4 Board


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PDF IRF640, RF1S640SM TA17422. IRF640 applications note irf640 RF1S640SM9A TB334 TA17422 RF1S640 RF1S640SM IRF640 INTERSIL
2014 - Not Available

Abstract: No abstract text available
Text: ?91000 IRF640 , SiHF640 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit , IRF640 , SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â , IRF640 SiHF640 Package Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless , DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF640 , SiHF640 Vishay Siliconix THERMAL RESISTANCE , TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF640 , SiHF640 Vishay Siliconix


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PDF IRF640, SiHF640 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
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