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Part Manufacturer Description Datasheet Download Buy Part
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

chip die npn transistor Datasheets Context Search

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schematic diagram 48 volt UPS

Abstract: 12 volt zener diode on pspice 74 Series IC Manual TM3J 750 ohm resistor pnp npn dual emitter connected pnp high emitter base voltage 15 volt transistor schottky model spice 7.5 volt zener diode on pspice design manual
Text: transistor in the 700 Series has three modes of operation, NPN transistor , lateral PNP transistor , and substrate PNP transistor . Pin Function 1. NPN Base, PNP Collector 2. NPN Emitter 3. NPN Collector, PNP , Emitter NPN Transistor As an NPN transistor there are two separate bases and three emitters which you , 24mA (8mA per emitter) The base emitter junction of the NPN transistor makes an excellent 5.9 volt , ) 3 E C I SEMICONDUCTOR MflE D 30267^7 DDDDDb? TMb «ECIS T-M-3J EEI NPN Transistor hFE vs Ic (1


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PDF 800MHz) schematic diagram 48 volt UPS 12 volt zener diode on pspice 74 Series IC Manual TM3J 750 ohm resistor pnp npn dual emitter connected pnp high emitter base voltage 15 volt transistor schottky model spice 7.5 volt zener diode on pspice design manual
73412

Abstract: CHIP transistor 348 NE64535 npn silicon low noise microwave transistor NE24318 NE64500 NE02135 NE889 NE68039 p08c
Text: . 3-35 NPN Medium Power Microwave Transistor . 3-39 NPN Medium Power Microwave Transistor . 3-39 NPN Silicon High Speed Switching Transistor . 3-43 NPN Silicon High Speed Switching Transistor . 3-43 NPN Silicon High Speed Switching Transistor


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PDF NE46134 NE85634 NE46734 NE85634 NE46134 NE85619 NE68119 73412 CHIP transistor 348 NE64535 npn silicon low noise microwave transistor NE24318 NE64500 NE02135 NE889 NE68039 p08c
chip die npn transistor

Abstract: MM1007
Text: COMPONENT PERFORMANCE Transistor Performance Small NPN , 1X, 2X Parameter Useful Current Range Current , devices fabricated on the same chip also allows precision circuits to be realized. Medium Current NPN , Macrochips. This device is fabricated with the same process steps used for the NPN transistor . This device , available for circuit designers Small NPN Cell Transistor (2x) g ra H w le °i P e l , to be used as a crossunder resistor. Small NPN Peripheral Transistor (1X) ^ Selected


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PDF PS2314, chip die npn transistor MM1007
op amp 741 model PSpice

Abstract: pnp transistor 3609 pnp npn dual emitter connected plessey capacitor MM1008 DN660 me 4946 MM-10004 transistor 2x operational amplifier discrete schematic
Text: interface circuits. The close match in transistor parameters for devices fabricated on the same chip also , NPN Cell Transistor (2x) B All array cells and some peripheral components use double base/double , resistor. |!5~lcj o © Small NPN Peripheral Transistor (1X) ° Selected peripheral NPN transistors have , Copyrighted By Its Respective Manufacturer Emitter Pinch Resistor/Small NPN Transistor E Each array cell contains a dual function structure consisting of a single base/single emitter small signal NPN transistor


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PDF PS2314, op amp 741 model PSpice pnp transistor 3609 pnp npn dual emitter connected plessey capacitor MM1008 DN660 me 4946 MM-10004 transistor 2x operational amplifier discrete schematic
1999 - Darlington pair IC with 15 Amp

Abstract: disadvantages of capacitor 150 watt amplifier advantages and disadvantages PNP DARLINGTON SINK DRIVER 500ma darlington pair transistor 1A power Junction FET advantages and disadvantages sr004 amplifier advantages and disadvantages linear regulator application
Text: , a PNP transistor occupies more die area to pass the same amount of current as an NPN transistor . Due , the sum of the VCE for the PNP transistor plus the VBE of each NPN transistor or 2VBE ( NPN ) + VCE(sat , the NPN darlington and PNP transistor composite or ILOAD/b3. The NPN darlington output stage is still , power NPN transistor , driven by a PNP transistor . The total dropout voltage is VBE ( NPN ) + VCE(sat)(PNP , structure, the base drive of the NPN pass transistor flows into the load and only the smaller bias current


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1998 - PNP DARLINGTON SINK DRIVER 500ma

Abstract: 150 watt amplifier advantages and disadvantages power Junction FET advantages and disadvantages Darlington pair IC with 15 Amp disadvantages of capacitor darlington pair transistor 1A npn darlington transistor 150 watts PNP DARLINGTON SINK DRIVER Darlington pair IC single linear regulator application
Text: transistor plus the VBE of each NPN transistor or to rise. In response, the voltage at the non inverting , is the load current divided by the gain of the NPN darlington and PNP transistor composite or ILOAD , . The pass device is a single power NPN transistor , driven by a PNP transistor . The total dropout , counterpart. In the composite structure, the base drive of the NPN pass transistor flows into the load and , adds cost to the system. Finally, a PNP transistor occupies more die area to pass the same amount of


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Not Available

Abstract: No abstract text available
Text: Pada Array Cell» Total Total Transistor * Restatane* Die Size (Mila) MMA 14 2 , OOllb'ifi T T-42-21 COMPONENT PERFORMANCE Transistor Performance Parameter Small NPN , 1X, 2X , devices fabricated on the same chip also allows precision circuits to be realized. Medium Current NPN , Macrochips. This device is fabricated with the same process steps used for the NPN transistor . This device , circuit designers Small NPN Cell Transistor (2x) B All array cells and some peripheral components


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PDF 37bfl522 thoro444410 PS2314,
darlington pair transistor 1A

Abstract: npn darlington transistor 150 watts chip die npn transistor darlington die
Text: the PNP transistor plus the VB E of each NPN transistor or 2V be ( NPN ) + VC E(sat) = 2V The inputs to , current is the load current divided by the gain of the NPN darlington and PNP transistor composite or I Lo , detailed discus sion.) This capacitor adds cost to the system. Finally, a PNP transistor occupies more die area to pass the same amount of current as an NPN transistor . Due to the fact that bipolar processes , structure. The pass device is a single power NPN transistor , driven by a PNP transistor . The total dropout


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PDF LM109 CS-8129 CS-8121 darlington pair transistor 1A npn darlington transistor 150 watts chip die npn transistor darlington die
2005 - chip die npn transistor

Abstract: No abstract text available
Text: adjacent or in other places on the same chip . Large NPN Transistor The large NPN transistor , located , the collector of the NPN transistor . Sinker 2-8 + + - - - - + + - , depth between the base and emitter diffusions forms the actual base of the NPN transistor . For high , Substrate + - + + + + - + For the center layer of the NPN transistor , the base , + + Substrate + + + + NPN Transistor 2-12 The wafer is finished at this


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2009 - allegro 3 PIN hall effect sensor

Abstract: allegro HALL EFFECT SENSOR hall effect sensor 4 pin ic hall effect sensor 3pin circuit diagram of hall effect allegro hall active and passive electronic components difference hall sensor 4pin active and passive electronic components 4 pin hall throttle sensor
Text: transistor structures. Figure 4 shows cross-sections of both NPN and PMOS transistors. S G D P , of a PMOS (top) and an n NPN type BJT transistor (bottom) 296065-AN Allegro MicroSystems, Inc , IC chip Figure 7. A typical complete Hall device package, showing the mounted die and wire , generated by a south pole. A positive field will turn on the output transistor and connect the output to , output transistor is called the magnetic operating point, and is abbreviated BOP. When the field is


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PDF 296065-AN allegro 3 PIN hall effect sensor allegro HALL EFFECT SENSOR hall effect sensor 4 pin ic hall effect sensor 3pin circuit diagram of hall effect allegro hall active and passive electronic components difference hall sensor 4pin active and passive electronic components 4 pin hall throttle sensor
2001 - Alternator regulator

Abstract: feedback current limiting circuit overvoltage protections application note CS8101
Text: impractical to design on chip reverse battery protection for NPN and composite NPN /PNP regulators. NPN and NPN /PNP composite regulators rely on off chip reverse battery protection in the form of a blocking , results in larger on chip transistors and therefore larger die size, possibly in bigger packages and all , load conditions. In a short circuit condition, not only is the pass transistor sourcing excessive current, the voltage across it is maximal. (Since VOUT is ground, the voltage across the transistor is


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PDF SR005AN/D r14525 Alternator regulator feedback current limiting circuit overvoltage protections application note CS8101
1998 - Design and Fabrication of 5V Constant Voltage Power supply

Abstract: CS-8101 alarm system with constant current source inductive power regulator electromechanical VOLTAGE REGULATOR PNP DARLINGTON SINK DRIVER 500ma linear regulator application
Text: transistor is VIN.) Linear regulators typically use one of two types of short circuit protection on chip , fabrication processes. This results in larger on chip transistors and therefore larger die size, possibly in , drop PNP regulators. However, it is impractical to design on chip reverse battery protection for NPN and composite NPN /PNP regulators. NPN and NPN /PNP composite regulators rely on off chip reverse , or excessive load conditions. In a short circuit condition, not only is the pass transistor sourcing


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2005 - MP4T80100

Abstract: MP4T801 M-Pulse Microwave NPN transistor 5 watts chip die npn transistor
Text: M-Pulse Microwave 8 Volt, NPN Transistor Medium Power Features · · · MP4T80100 Die , ) Description The MP4T80100 series of our medium power high gain npn transistor has a power output of .5 watts , available in chip (MP4T80100), 200mil BEO (MP4T801510). Die size = 350 X 450 uM Bottom of die is , Volt, Mediam Power Transistor MP4T801 Series Electrical Specifications at 25°C Symbol , IC = 220 mA f = .9 GHz Power Output Class C Units GHz MP4T80100 Chip 6 typ


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PDF MP4T80100 MP4T80100 300mA MP4T801 MP4T80100) 200mil MP4T801510) MP4T801510 M-Pulse Microwave NPN transistor 5 watts chip die npn transistor
Not Available

Abstract: No abstract text available
Text: M-Pulse Microwave 8 Volt, NPN Transistor Medium Power Die Outline MP4T80100 Features â , ) Description The MP4T80100 series of our medium power high gain npn transistor has a power output of .5 watts , available in chip (MP4T80100), 200mil BEO (MP4T801510). Die size = 350 X 450 uM Bottom of die is , MP4T801 Series 8 Volt, Mediam Power Transistor Electrical Specifications at 25°C Symbol , IC = 220 mA f = .9 GHz Power Output Class C Units GHz MP4T80100 Chip 6 typ


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PDF MP4T80100 MP4T80100 300mA MP4T801 MP4T80100) 200mil MP4T801510) MP4T801510
Design and Fabrication of 5V Constant Voltage Power supply

Abstract: No abstract text available
Text: protection for NPN and composite NPN /PNP regulators. NPN and N PN /PNP composite regulators rely on off chip , , not only is the pass transistor sourcing excessive cur rent, the voltage across it is maximal. (Since V0(JT is ground, the voltage across the transistor is VIN .) Linear regulators typically use one of two types of short circuit protection on chip : constant current limit or foldback current limit. In a , transistor Q3 (VB E 3 =IB/R ) increases, turning on Q3. Q3's collector current is steered away from Q l


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1999 - linear regulator application

Abstract: No abstract text available
Text: protection for NPN and composite NPN /PNP regulators. NPN and NPN /PNP composite regulators rely on off chip , excessive load conditions. In a short circuit condition, not only is the pass transistor sourcing excessive current, the voltage across it is maximal. (Since VOUT is ground, the voltage across the transistor is VIN.) Linear regulators typically use one of two types of short circuit protection on chip : constant current , , the base voltage of transistor Q3 (VBE3 =IB/R) increases, turning on Q3. Q3Õs collector current is


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1997 - laser diode spice modeling

Abstract: laser diode spice model simulation spice ATF 10136 ATF13136 atf-10136 spice MSA-09 mmic a20 MSA-0311 S parameters for ATF 10136 AT-41500
Text: and reliability. Transistor Chip Use This is an abstract from Application Note AN-A005: Transistor Chip Use. Packaging, Shipment, and Storage Hewlett-Packard chips are supplied in two inch , . Each chip tray is enclosed in a plastic box to protect the die during shipping. Up to 300 chips can , produce a fillet around the die . 4. Using tweezers or a vacuum collet, pick up the chip that is to be die attached and orient it properly for placement on the mounting surface. 5. Place the chip on the


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PDF 42E-13 04E-1 53E-13 5E-12 87E-2 1E-14) INA-12 900MHz 900E6) laser diode spice modeling laser diode spice model simulation spice ATF 10136 ATF13136 atf-10136 spice MSA-09 mmic a20 MSA-0311 S parameters for ATF 10136 AT-41500
transistor schottky model spice

Abstract: SPICE thyristor model 7 segment SPICE Device Model
Text: R AN SISTO R S 2.1 NPN Transistor Properties and Usage. 3-11 2.2 Choosing the Collector Current. 3-11 2.3 NPN Transistor Vbe Matching. 3-12 2.4 NPN Transistor ß Matching. 3-13 2.5 Low-Noise 2.6 NPN Transistor Saturation , 4.1 The Diode-Connected NPN Transistor . 3-17 4.2 Schottky Diodes


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PDF VJ900 VJ900 D0011L3 T-42-21 transistor schottky model spice SPICE thyristor model 7 segment SPICE Device Model
2001 - npn darlington transistor 150 watts

Abstract: 100 amp npn darlington power transistors 150 watt amplifier advantages and disadvantages 7 amps pnp transistor darlington pair transistor PNP DARLINGTON SINK DRIVER CS8129 CS8121 Darlington npn Darlington npn 2 amp
Text: , a PNP transistor occupies more die area to pass the same amount of current as an NPN transistor , the PNP transistor plus the VBE of each NPN transistor or 2.0 VBE( NPN ) ) VCE(sat) [ 2.0 V The , darlington and PNP transistor composite or ILOAD/3. The NPN darlington output stage is still quite widely , structure. Figure 4 shows the basic structure. The pass device is a single power NPN transistor , driven by , counterpart. In the composite structure, the base drive of the NPN pass transistor flows into the load and


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PDF SR004AN/D r14525 npn darlington transistor 150 watts 100 amp npn darlington power transistors 150 watt amplifier advantages and disadvantages 7 amps pnp transistor darlington pair transistor PNP DARLINGTON SINK DRIVER CS8129 CS8121 Darlington npn Darlington npn 2 amp
10KO

Abstract: WUI6817157 pnp 8 transistor array
Text: permit practical values from 50n to 200KQ, on the same chip Die size optimized for narrow (.150" wide , 22 Metal pitch, ¿iM 14 Metal resistance, mQ/square 40,60s Small NPN transistor Vceo, mln 12 , they retain the flexible transistor geometries that allow most integrations to be accomplished with a , dedicated mask levels) Is available. The arrays feature four transistor geometries arranged in a macrocell matrix, combined with a wide range of diffused and ion implant resistor values. 1 GHz process ( NPN Ft


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PDF 2Qb75Sb 00Dlb33 40/jA 114x74 WUI6817157 10KO WUI6817157 pnp 8 transistor array
MPS6502

Abstract: ATP01 mc 6501 TRANSISTOR C-111 MPQ6002 baw 92 2N2219 transistor substitute 2N2218 MP06001 2N2905
Text: Product fj = 400 MHz (Typ) @ lc = 50 mAdc • NPN Transistor Similar to 2N2218 or 2N2219 • PNP Transistor Similar to 2N2904 or 2N2905 • TO-116 Package - Compact Sire Compatible with IC Automatic , Collector Current - Continuous 'C 500 mAdc Each Transistor Four Transistore Equal Power Power , Thermal Resistance Each Die 125 193 Effective, 4 Die 41.6 100 °c/w Coupling Factors Q1-Q4 or Q2-Q3 30 , THERMAL RESISTANCE In multiple chip devices, coupling of heat between di« occur«. The junction


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PDF MPQ6001 MPQ6002 MPQ6501 MPQ6502 2N2218 2N2219 2N2904 2N2905 O-116 MPQ6501, MPS6502 ATP01 mc 6501 TRANSISTOR C-111 baw 92 2N2219 transistor substitute MP06001 2N2905
H31D

Abstract: MP4T243 MP4T856 MP4T6825 MP4T645 MP4T6365 MP4T6325 MP4T6310 MP4T56800 Silicon bipolar RF transistor microwave t
Text: . . . . . . . . . . . . . . . . . . . . . . . NPN Silicon Transistor MP4T645 Silicon Bipolar High , passage of the chip into the needle. If a vacuum pickup is not available, the die can be picked up by , temperature limit of the chip or component. I Conductive Epoxy Die Attachment R S Place the , solder flow onto the chip backing. Remove the substrate from the heat source as soon as the die , Chip Capacitors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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transistor schottky model spice

Abstract: No abstract text available
Text: TRANSISTORS 2.1 NPN Transistor Properties and Usage. 2-10 2.2 NPN Transistor Vbe Matching. 2-10 2.3 NPN Transistor ß Matching , NPN Transitors 10.8: Type TLP1 Lateral PNP Transistor . 10.9: Type T3S Schottky NPN Transistor . 10.10: Type T30S Schottky NPN Transistor . 10.11: Type T25S Schottky NPN Transistor . 10.12: Type T50S Schottky NPN Transistor


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PDF VJ800 T-H2-21 transistor schottky model spice
2013 - smd transistor 12W 13

Abstract: transistor SMD 12W MOSFET smd transistor 12W 3 pins transistor SMD 12W D13005 E D13005 D13005 transistor smd transistor 12W 55
Text: . Innovative PowerTM DESCRIPTION Switch Drive. Switch node for the external NPN transistor . Connect this , . Ground. Base Drive. Base driver for the external NPN transistor . Power Supply. This pin provides bias , transients and compensated with the internal compensation network, modulates the external NPN transistor , driver output that drives the emitter of an external high voltage NPN transistor . This baseemitter-drive , rectified high voltage DC rail supplies current to the base of the NPN transistor . This results in an


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PDF ACT365 10-Jan-13 ACT365 150mW smd transistor 12W 13 transistor SMD 12W MOSFET smd transistor 12W 3 pins transistor SMD 12W D13005 E D13005 D13005 transistor smd transistor 12W 55
2012 - transistor BD 222 SMD

Abstract: D13005 transistor SMD 12W D13005 transistor transistor SMD 12W MOSFET D13005 E transformer winding formula 220v Ac to 12v Dc
Text: DESCRIPTION 1 SW Switch Drive. Switch node for the external NPN transistor . Connect this pin to the , internal compensation network, modulates the external NPN transistor peak current at CS pin with current , emitter of an external high voltage NPN transistor . This baseemitter-drive method makes the drive circuit , DC rail supplies current to the base of the NPN transistor . This results in an amplified emitter , power current path is formed by the transformer’s primary winding, the NPN transistor , the ACT337


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PDF ACT337 14-Nov-12 ACT337 transistor BD 222 SMD D13005 transistor SMD 12W D13005 transistor transistor SMD 12W MOSFET D13005 E transformer winding formula 220v Ac to 12v Dc
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