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LT1056CMH Linear Technology IC OP-AMP, MBCY, Operational Amplifier
LT1077CIH Linear Technology IC OP-AMP, MBCY, Operational Amplifier
LM118AMH Linear Technology IC OP-AMP, MBCY, Operational Amplifier
LT1055CMH Linear Technology IC OP-AMP, MBCY, Operational Amplifier
LT1077CMH Linear Technology IC OP-AMP, MBCY, Operational Amplifier
LT1222MH Linear Technology IC OP-AMP, MBCY, Operational Amplifier

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x-ray cmos IMAGE SENSOR

Abstract: image sensor x-ray S11684
Text: scintillator. The detector (two-dimensional photodiode array), highperformance charge amplifier , and scanning , ) × 1/Sf .(1) (b) Active pixel type G : amplifier gain Q(t): integrated charge I(t , value after A/D conversion is set to the saturation charge value. Address switch Amplifier Data , amplifier first-stage transistor constants determined by charge amplifier 1/f noise constant of charge amplifier first-stage transistor gate oxide film capacitance of charge amplifier first-stage transistor W


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LEMO 5 pin out

Abstract: LEMO FGG.0B LEMO 14 pin LEMO LEMO 4-Pin LEMO 7 pin LEMO 8 pin x-ray cmos image sensor general electric x-ray scintillator amplifier
Text: twodimensional photodiode array, row-scanning vertical shift register, and 8 charge amplifier arrays. Each charge amplifier array has a horizontal shift register and consists of 300 ch charge amplifiers with CDS circuit , Scintillator Specification 50 × 50 120 × 120 2400 × 2400 2368 × 2340 Charge amplifier array USB 2.0 , electric charge is accumulated in each pixel according to the light intensity. The accumulated charge on , each amplifier array by scanning the horizontal shift register. The control board converts the analog


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PDF C9732DK-11 C9732DK-11 C9732DK-11. 14-bit KACCC0385EB KACCC0384EB 16-divided KACCC0447EA KACC1177E01 LEMO 5 pin out LEMO FGG.0B LEMO 14 pin LEMO LEMO 4-Pin LEMO 7 pin LEMO 8 pin x-ray cmos image sensor general electric x-ray scintillator amplifier
2012 - Not Available

Abstract: No abstract text available
Text: array, row-scanning vertical shift register, and 8 charge amplifier arrays. Each charge amplifier array has a horizontal shift register and consists of 132 ch charge amplifier with CDS circuit. CsI , Scintillator Specification 50 × 50 52.8 × 52.8 1056 × 1056 1032 × 1032 Charge amplifier array USB 2.0 TTL , charge is accumulated in each pixel according to the light intensity. The accumulated charge on each row , amplifier array by scanning the horizontal shift register. The control board converts the analog signal into


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PDF C9730DK-11 C9730DK-11 C9730DK-11. 14-bit SE-171 KACC1144E06
2015 - Not Available

Abstract: No abstract text available
Text: two-dimensional photodiode array, row-scanning vertical shift register, and 8 charge amplifier arrays. Each charge amplifier array has a horizontal shift register and consists of 132 ch charge amplifiers with CDS circuit , 52.8 × 52.8 1056 × 1056 1032 × 1032 Charge amplifier array USB 2.0 TTL Direct deposition CsI , electric charge is accumulated in each pixel according to the light intensity. The accumulated charge on , each amplifier array by scanning the horizontal shift register. The control board converts the analog


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PDF C9730DK-10 C9730DK-10 C9730DK-10. 14-bit B1201, KACC1143E09
2011 - LEMO 5 pin out

Abstract: No abstract text available
Text: , row-scanning vertical shift register, and 8 charge amplifier arrays. Each charge amplifier array has a horizontal shift register and consists of 300 ch charge amplifiers with CDS circuit. CsI scintillator is , × 50 120 × 120 2400 × 2400 2368 × 2340 Charge amplifier array USB 2.0, 14-bit TTL Direct deposition , converted to fluorescence, which then enters the two-dimensional photodiode array where electric charge is accumulated in each pixel according to the light intensity. The accumulated charge on each row is sequentially


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PDF C9732DK-11 C9732DK-11 C9732DK-11. 14-bit SE-171 KACC1177E02 LEMO 5 pin out
2012 - Not Available

Abstract: No abstract text available
Text: , row-scanning vertical shift register, and 8 charge amplifier arrays. Each charge amplifier array has a horizontal shift register and consists of 300 ch charge amplifiers with CDS circuit. CsI scintillator is , × 50 120 × 120 2400 × 2400 2368 × 2340 Charge amplifier array USB 2.0, 14-bit TTL Direct deposition , converted to fluorescence, which then enters the two-dimensional photodiode array where electric charge is accumulated in each pixel according to the light intensity. The accumulated charge on each row is sequentially


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PDF C9732DK-11 C9732DK-11 C9732DK-11. 14-bit SE-171 KACC1177E03
2008 - charge amplifier array

Abstract: No abstract text available
Text: array, row-scanning vertical shift register, and 8 charge amplifier arrays. Each charge amplifier array has a horizontal shift register and consists of 132 ch charge amplifiers with CDS circuit. CsI , Scintillator Specification 50 × 50 52.8 × 52.8 1056 × 1056 1032 × 1032 Charge amplifier array USB 2.0 TTL , charge is accumulated in each pixel according to the light intensity. The accumulated charge on each row , amplifier array by scanning the horizontal shift register. The control board converts the analog signal into


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PDF C9730DK-10 C9730DK-10 C9730DK-10. 14-bit SE-171 KACC1143E03 charge amplifier array
2009 - Not Available

Abstract: No abstract text available
Text: array, row-scanning vertical shift register, and 8 charge amplifier arrays. Each charge amplifier array has a horizontal shift register and consists of 132 ch charge amplifiers with CDS circuit. CsI , Scintillator Specification 50 × 50 52.8 × 52.8 1056 × 1056 1032 × 1032 Charge amplifier array USB 2.0 TTL , charge is accumulated in each pixel according to the light intensity. The accumulated charge on each row , amplifier array by scanning the horizontal shift register. The control board converts the analog signal into


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PDF C9730DK-10 C9730DK-10 C9730DK-10. 14-bit SE-171 KACC1143E03
2015 - Not Available

Abstract: No abstract text available
Text: two-dimensional photodiode array, row-scanning vertical shift register, and 8 charge amplifier arrays. Each charge amplifier array has a horizontal shift register and consists of 300 ch charge amplifiers with CDS circuit , 120 × 120 2400 × 2400 2368 × 2340 Charge amplifier array USB 2.0, 14-bit TTL Direct , electric charge is accumulated in each pixel according to the light intensity. The accumulated charge on , each amplifier array by scanning the horizontal shift register. The control board converts the analog


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PDF C9732DK-11 C9732DK-11 C9732DK-11. 14-bit B1201, KACC1177E06
xr 2204

Abstract: XR-100T-CZT XR-100CR Amptek RTD 1055 lemo connector lemo 6 pin connector LEMO px2cr 9pin D-connector
Text: ) Peaks due to partial charge collection 10 µs/div Figure 4. PX2CR Amplifier Output Shaping Time , and includes a spectroscopy grade Shaping Amplifier . The XR-100CR/PX2CR system ensures stable , . The thermoelectric cooler cools both the silicon detector and the input FET transistor to the charge , charge sensitive preamplifier. The reset transistor, which is typically used in most other systems has , injecting a precise charge pulse through the detector capacitance to the input FET. This method eliminates


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PDF XR-100CR xr 2204 XR-100T-CZT Amptek RTD 1055 lemo connector lemo 6 pin connector LEMO px2cr 9pin D-connector
2012 - LEMO k series

Abstract: LEMO 5 pin out
Text: array, row-scanning vertical shift register, and 8 charge amplifier arrays. Each charge amplifier array has a horizontal shift register and consists of 132 ch charge amplifiers with CDS circuit. CsI , Scintillator Specification 50 × 50 52.8 × 52.8 1056 × 1056 1032 × 1032 Charge amplifier array USB 2.0 TTL , charge is accumulated in each pixel according to the light intensity. The accumulated charge on each row , amplifier array by scanning the horizontal shift register. The control board converts the analog signal into


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PDF C9730DK-10 C9730DK-10 C9730DK-10. 14-bit SE-171 KACC1143E06 LEMO k series LEMO 5 pin out
2010 - CMOS blemish specification

Abstract: No abstract text available
Text: , row-scanning vertical shift register, and 8 charge amplifier arrays. Each charge amplifier array has a horizontal shift register and consists of 300 ch charge amplifiers with CDS circuit. CsI scintillator is , × 50 120 × 120 2400 × 2400 2368 × 2340 Charge amplifier array USB 2.0, 14-bit TTL Direct deposition , converted to fluorescence, which then enters the two-dimensional photodiode array where electric charge is accumulated in each pixel according to the light intensity. The accumulated charge on each row is sequentially


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PDF C9732DK C9732DK C9732DK. 14-bit SE-171 KACC1125E09 CMOS blemish specification
2011 - sensor x-ray

Abstract: LEMO 5 pin out CMOS Camera Module CSI usb Interface
Text: array, row-scanning vertical shift register, and 8 charge amplifier arrays. Each charge amplifier array has a horizontal shift register and consists of 132 ch charge amplifiers with CDS circuit. CsI , Scintillator Specification 50 × 50 52.8 × 52.8 1056 × 1056 1032 × 1032 Charge amplifier array USB 2.0 TTL , charge is accumulated in each pixel according to the light intensity. The accumulated charge on each row , amplifier array by scanning the horizontal shift register. The control board converts the analog signal into


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PDF C9730DK-10 C9730DK-10 C9730DK-10. 14-bit SE-171 KACC1143E05 sensor x-ray LEMO 5 pin out CMOS Camera Module CSI usb Interface
2011 - Not Available

Abstract: No abstract text available
Text: , row-scanning vertical shift register, and 8 charge amplifier arrays. Each charge amplifier array has a horizontal shift register and consists of 300 ch charge amplifiers with CDS circuit. CsI scintillator is , × 50 120 × 120 2400 × 2400 2368 × 2340 Charge amplifier array USB 2.0, 14-bit TTL Direct deposition , converted to fluorescence, which then enters the two-dimensional photodiode array where electric charge is accumulated in each pixel according to the light intensity. The accumulated charge on each row is sequentially


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PDF C9732DK-11 C9732DK-11 C9732DK-11. 14-bit SE-171 KACC1177E02
2009 - Not Available

Abstract: No abstract text available
Text: array, row-scanning vertical shift register, and 8 charge amplifier arrays. Each charge amplifier array has a horizontal shift register and consists of 132 ch charge amplifiers with CDS circuit. CsI , Scintillator Specification 50 × 50 52.8 × 52.8 1056 × 1056 1032 × 1032 Charge amplifier array USB 2.0 TTL , charge is accumulated in each pixel according to the light intensity. The accumulated charge on each row , amplifier array by scanning the horizontal shift register. The control board converts the analog signal into


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PDF C9730DK-10 C9730DK-10 C9730DK-10. 14-bit SE-171 KACC1143E03
2010 - LEMO

Abstract: EN-61326-1 scintillator amplifier C9728DK-10 C9730DK-10 ECG REPLACEMENT EN61326-1 x-ray cmos image sensor CMOS Camera Module CSI charge amplifier
Text: photodiode array, row-scanning vertical shift register, and 8 charge amplifier arrays. Each charge amplifier array has a horizontal shift register and consists of 132 ch charge amplifiers with CDS circuit. CsI , × 50 52.8 × 52.8 1056 × 1056 1032 × 1032 Charge amplifier array USB 2.0 TTL Direct deposition , charge is accumulated in each pixel according to the light intensity. The accumulated charge on each row , amplifier array by scanning the horizontal shift register. The control board converts the analog signal


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PDF C9730DK-10 C9730DK-10 C9730DK-10. 14-bit SE-171 KACC1143E04 LEMO EN-61326-1 scintillator amplifier C9728DK-10 ECG REPLACEMENT EN61326-1 x-ray cmos image sensor CMOS Camera Module CSI charge amplifier
2008 - Not Available

Abstract: No abstract text available
Text: , row-scanning vertical shift register, and 8 charge amplifier arrays. Each charge amplifier array has a horizontal shift register and consists of 300 ch charge amplifiers with CDS circuit. CsI scintillator is , × 50 120 × 120 2400 × 2400 2368 × 2340 Charge amplifier array USB 2.0, 14-bit TTL Direct deposition , converted to fluorescence, which then enters the two-dimensional photodiode array where electric charge is accumulated in each pixel according to the light intensity. The accumulated charge on each row is sequentially


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PDF C9732DK C9732DK C9732DK. 14-bit SE-171 KACC1125E07
2008 - sensor x-ray

Abstract: No abstract text available
Text: made up of a twodimensional photodiode array, row-scanning vertical shift register, and 8 charge amplifier arrays. Each charge amplifier array has a horizontal shift register and consists of 78 ch charge , 624 608 × 616 Charge amplifier array LVDS (differential), 13-bit 15.15 LVDS (differential) TTL , photodiode array where electric charge is accumulated in each pixel according to the light intensity. The accumulated charge on each row is sequentially selected by the row-scanning vertical shift register


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PDF C10322D C10322D 13-bit SE-171 KACC1132E06 sensor x-ray
2009 - x-ray cmos IMAGE SENSOR

Abstract: C973
Text: , row-scanning vertical shift register, and 8 charge amplifier arrays. Each charge amplifier array has a horizontal shift register and consists of 300 ch charge amplifiers with CDS circuit. CsI scintillator is , × 50 120 × 120 2400 × 2400 2368 × 2340 Charge amplifier array USB 2.0, 14-bit TTL Direct deposition , converted to fluorescence, which then enters the two-dimensional photodiode array where electric charge is accumulated in each pixel according to the light intensity. The accumulated charge on each row is sequentially


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PDF C9732DK C9732DK C9732DK. 14-bit SE-171 KACC1125E08 x-ray cmos IMAGE SENSOR C973
2009 - Not Available

Abstract: No abstract text available
Text: , row-scanning vertical shift register, and 8 charge amplifier arrays. Each charge amplifier array has a horizontal shift register and consists of 300 ch charge amplifiers with CDS circuit. CsI scintillator is , × 50 120 × 120 2400 × 2400 2368 × 2340 Charge amplifier array USB 2.0, 14-bit TTL Direct deposition , converted to fluorescence, which then enters the two-dimensional photodiode array where electric charge is accumulated in each pixel according to the light intensity. The accumulated charge on each row is sequentially


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PDF C9732DK C9732DK C9732DK. 14-bit SE-171 KACC1125E07
2007 - x-ray cmos image sensor

Abstract: LEMO CMOS Camera Module CSI LEMO FGG.0B image sensor x-ray SE-171 CLAD56 C9730DK-10 scintillator amplifier jae de-9pf-n
Text: Scintillator Specification 50 × 50 52.8 × 52.8 1056 × 1056 1032 × 1032 Charge amplifier array USB2 , also has 8 charge-sensitive amplifier arrays each having 132 channel amplifiers with a horizontal shift register. Analog video signals are amplified as the charge on each video line by 1056 ch charge amplifiers with CDS (Correlated Double Sampling) circuits added, and are output each of 8 amplifier arrays. The , pairs/mm Saturation charge Csat 6.4 M electrons Dynamic range 5100 Defect line *5 10 lines


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PDF C9730DK-10 C9730DK-10 C9730DK-10. 14-bit SE-171 KACC1143E01 x-ray cmos image sensor LEMO CMOS Camera Module CSI LEMO FGG.0B image sensor x-ray CLAD56 scintillator amplifier jae de-9pf-n
2008 - sensor x-ray

Abstract: de-9pf-n "frame grabber"
Text: Charge amplifier array USB2.0 TTL Direct deposition CsI C9730DK-10 Unit µm mm pixels pixels - s , charge-sensitive amplifier arrays each having 132 channel amplifiers with a horizontal shift register. Analog video signals are amplified as the charge on each video line by 1056 ch charge amplifiers with CDS (Correlated Double Sampling) circuits added, and are output each of 8 amplifier arrays. The control board converts , Saturation charge Csat 6.4 M electrons Dynamic range 5100 Defect line *5 10 lines Output offset *6 260 800


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PDF C9730DK-10 C9730DK-10 C9730DK-10. 14-bit SE-171 KACC1143E02 sensor x-ray de-9pf-n "frame grabber"
2007 - LEMO

Abstract: scintillator scintillator amplifier AC100 C9732DK CLAD56 SE-171 x-ray cmos image sensor
Text: × 2340 Charge amplifier array USB2.0 TTL Direct deposition CsI Unit µm mm pixels pixels , charge-sensitive amplifier arrays each having 300 channel amplifiers with a horizontal shift register. Analog video signals are amplified as the charge on each video line by 2400 ch charge amplifiers with CDS (Correlated Double Sampling) circuits, and are output is obtained from each of 8 amplifier arrays. The control board , LSB/mR Resolution *4 Reso 9 10 line pairs/mm Saturation charge Csat 6.4 M electrons Dynamic


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PDF C9732DK C9732DK C9732DK. 14-bit SE-171 KACC1125E05 LEMO scintillator scintillator amplifier AC100 CLAD56 x-ray cmos image sensor
2008 - sensor x-ray

Abstract: No abstract text available
Text: × 50 120 × 120 2400 × 2400 2368 × 2340 Charge amplifier array USB2.0 TTL Direct deposition CsI , charge-sensitive amplifier arrays each having 300 channel amplifiers with a horizontal shift register. Analog video signals are amplified as the charge on each video line by 2400 ch charge amplifiers with CDS (Correlated Double Sampling) circuits added, and are output each of 8 amplifier arrays. The control board converts , *4 Reso 9 10 line pairs/mm Saturation charge Csat 6.4 M electrons Dynamic range 5100 Defect line *5


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PDF C9732DK C9732DK C9732DK. 14-bit SE-171 KACC1125E06 sensor x-ray
2001 - LEMO FFA-00

Abstract: Rs422 timing diagram LEMO FFA.00 image sensor x-ray x-ray cmos image sensor charge amplifier x-ray biomedical sensor C7410 LEMO scintillator amplifier
Text: amplifier array chips with a horizontal shift register, sense the charge on each of the video line and , sensor s Specifications Parameter Readout Amplifier feedback capacitance Video output waveform Video output polarity Conditions Description Charge amplifier array 0.2 pF Rectangular waveform , speed external Noise (rms) Saturation charge Resolution Output impedance Pixel size Number of


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PDF C7410 C7410 SE-171 KACC1043E02 LEMO FFA-00 Rs422 timing diagram LEMO FFA.00 image sensor x-ray x-ray cmos image sensor charge amplifier x-ray biomedical sensor LEMO scintillator amplifier
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