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cgh35 datasheet (4)

Part Manufacturer Description Type PDF
CGH35015F Cree 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Original PDF
CGH35030F Cree 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Original PDF
CGH351T500V2C Cornell Dubilier Aluminum Capacitors, Capacitors, CAP ALUM 350UF 500V SCREW Original PDF
CGH351T500V2C Mallory Capacitor Type CGH - Computer Grade Capacitors Original PDF

cgh35 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2012 - CGH35060

Abstract: No abstract text available
Text: CGH35060F2 / CGH35060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Cree's CGH35060F2 /P2 is a gallium , . Package Type : 440193 & 440206 PN: CGH3506 0F2 & CGH35 060P2 Typical Performance Over 3.1-3.5 GHz , GHz 11.5 46.7 10.1 62.0 -4.3 Units dB dBm dBm % dB Note: Measured in the CGH35060F2-TB amplifier , prior to packaging. 2 Measured in the CGH35060F2-TB test fixture. 3 100 µS Pulse Width at 20% Duty Cycle , Performance Small Signal Gain and Return Losses vs Frequency of the CGH35060F2 and CGH35060P2 VDD = 28 V, IDQ


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PDF CGH35060F2 CGH35060P2 CGH35060F2/P2 CGH3506 CGH35 060P2 CGH35060
2013 - Not Available

Abstract: No abstract text available
Text: CGH35060F2 / CGH35060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Cree’s CGH35060F2 /P2 is a gallium , . Package Type : 440193 & 440206 PN: CGH3506 0F2 & CGH35 060P2 Typical Performance Over 3.1-3.5 GHz , -7.3 -17.0 -4.3 dB Note: Measured in the CGH35060F2-TB amplifier circuit, under 100 µsec , Characteristics Notes: 1 Measured on wafer prior to packaging. 2 Measured in the CGH35060F2-TB test fixture , CGH35060F2 and CGH35060P2 VDD = 28 V, IDQ = 200 mA 20 15 10 S11,S21, S22 (dB) 5 0 -5 -10 -15


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PDF CGH35060F2 CGH35060P2 CGH35060F2/P2 CGH3506 CGH35 060P2
2013 - Not Available

Abstract: No abstract text available
Text: CGH35060F2 / CGH35060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Cree’s CGH35060F2 /P2 is a gallium , . Package Type : 440193 & 440206 PN: CGH3506 0F2 & CGH35 060P2 Typical Performance Over 3.1-3.5 GHz , -7.3 -17.0 -4.3 dB Note: Measured in the CGH35060F2-TB amplifier circuit, under 100 µsec , Characteristics Notes: 1 Measured on wafer prior to packaging. 2 Measured in the CGH35060F2-TB test fixture , CGH35060F2 and CGH35060P2 VDD = 28 V, IDQ = 200 mA 20 15 10 S11,S21, S22 (dB) 5 0 -5 -10 -15


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PDF CGH35060F2 CGH35060P2 CGH35060F2/P2 CGH3506 CGH35 060P2
2008 - 16312 transistor

Abstract: CGH35060F1-TB
Text: Drain Efficiency and Gain vs Output Power of the CGH35060F1 and CGH35060P1 in the CGH35060F1-TB , VDD = , and CGH35060P1 in Broadband Amplifier Circuit CGH35060F-TB , VDD = 28 V, IDQ = 250 mA 6.0 5.5 5.0 4.5 , CGH35060P1 in the CGH35060F1-TB , VDD = 28 V, IDQ = 250 mA, 802.16-2004 OFDM, PAR=9.8 dB 5.2 4.8 4.4 4.0 3.6 , CGH35060F1 / CGH35060P1 60 W, 3.3-3.9 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access , 3.4 GHz 12.2 1.82 1.83 23.1 10.3 Note: Measured in the CGH35060F1-TB amplifier circuit, under


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PDF CGH35060F1 CGH35060P1 CGH35060F CGH3506 CGH35 060P1 CGH35060P1 16312 transistor CGH35060F1-TB
2008 - Not Available

Abstract: No abstract text available
Text: (dBm) Typical EVM and Efficiency vs Output Power of CGH35060F1 and CGH35060P1 in the CGH35060F1-TB , CGH35060F1 / CGH35060P1 60 W, 3.3-3.9 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access , (TC = 25˚C) Package Type : 440193 & 440196 PN: CGH3506 0F1 & CGH35 060P1 of Demonstration , 13.1 dB Input Return Loss Note: Measured in the CGH35060F1-TB amplifier circuit, under 802.16 , Characteristics Notes: 1 Measured on wafer prior to packaging. 2 Measured in the CGH35060F1-TB test fixture


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PDF CGH35060F1 CGH35060P1 CGH35060F CGH3506 CGH35 060P1 CGH35060P1
2008 - Not Available

Abstract: No abstract text available
Text: (dBm) Typical EVM and Efficiency vs Output Power of CGH35060F1 and CGH35060P1 in the CGH35060F1-TB , CGH35060F1 / CGH35060P1 60 W, 3.3-3.9 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access , (TC = 25˚C) Package Type : 440193 & 440196 PN: CGH3506 0F1 & CGH35 060P1 of Demonstration , 13.1 dB Input Return Loss Note: Measured in the CGH35060F1-TB amplifier circuit, under 802.16 , CGH35060F1-TB test fixture. 3 Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst


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PDF CGH35060F1 CGH35060P1 CGH35060F CGH3506 CGH35 060P1 CGH35060P1
2007 - transistor E 13007

Abstract: 54-619 00457 43251 cree marking information msl 9351 s-parameters
Text: CGH35015S-TB amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated , Units Volts Volts °C °C °C/W Note: 1 As measured on the CGH35015S-TB , using 11 vias, 2 mil plating , , Coding Type RS-CC, Coding Rate Type 2/3. 3 Measured in the CGH35015S-TB test fixture. 4 Measured on wafer , Preliminary CGH35015S-TB Demonstration Amplifier Circuit CGH35015S-TB Demonstration Amplifier Circuit , : +1.919.313.5778 www.cree.com/wireless CGH35015S-TB Demonstration Amplifier Circuit Schematic


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PDF CGH35015S CGH35015S CGH3501 transistor E 13007 54-619 00457 43251 cree marking information msl 9351 s-parameters
2009 - CGH103T250X4L

Abstract: CGH742T250X3L CGH702T250W4L CGH532T250V5L CGH502T250W3L CGH412T250V4L CGH292T250V3L CGH223T250X8L CGH172T250V2L CGH133T250X5L
Text: 29.6 7.4 9.3 2.0 5.625 350 CGH351T500V2 C 692.0 612.0 1.3 1.5 2.0 2.125 3,800


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PDF CGH172T450W3L CGH272T500X4 CGH182T450V5L CGH312T500X4L CGH242T450W4L CGH252T450X3L CGH362T500X5 CGH412T500X5L CGH692T500X8L CGH103T250X4L CGH742T250X3L CGH702T250W4L CGH532T250V5L CGH502T250W3L CGH412T250V4L CGH292T250V3L CGH223T250X8L CGH172T250V2L CGH133T250X5L
2005 - Not Available

Abstract: No abstract text available
Text: : +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless CGH35015F-TB Demonstration Amplifier Circuit CGH35015F-TB Demonstration Amplifier Circuit Outline 3-000522 REV 4 CGH35015-TB Copyright © 2005-2006 , 6.0 13.0 9.0 dB Input Return Loss Note: Measured in the CGH35015F-TB amplifier circuit , . 3 Measured in the CGH35015F-TB test fixture. Copyright © 2005-2006 Cree, Inc. All rights , www.cree.com/wireless CGH35015-TB Demonstration Amplifier Circuit Schematic CGH35015-TB Demonstration


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PDF CGH35015 CGH35015 CGH3501
2005 - Not Available

Abstract: No abstract text available
Text: CGH35030F CGH35030F in Broadband Amplifier Circuit CGH35030F-TB 26% 4.8 24% 4.4 EVM 22 , 5POS 1 - PCB, RO4350B, Er = 3.48, h = 20 mil 1 - CGH35030F 1 CGH35030F-TB , Return Loss 12.3 8.5 6.1 5.4 6.1 9.0 dB Note: Measured in the CGH35030F-TB , wafer prior to packaging. 2 Measured in the CGH35030F-TB test fixture. 3 Under 802.16 OFDM, 3.5 MHz , Efficiency at 23 dBm and 36 dBm vs Frequency of CGH35030 CGH35030F in Broadband Amplifier Circuit 6.0


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PDF CGH35030F CGH35030F CGH3503
2005 - Not Available

Abstract: No abstract text available
Text: Fax: +1.919.313.5778 www.cree.com/wireless CGH35030F-TB Demonstration Amplifier Circuit Schematic CGH35030F-TB Demonstration Amplifier Circuit Outline 3-000538 REV1 CGH35030-TB Copyright © 2005-2007 , .1CEN LK 5POS 1 Q1 CGH35030F 1 C8 J3,J4 CGH35030F-TB Demonstration Amplifier , Signal Gain EVM @ 36 dBm Note: Measured in the CGH35030F-TB amplifier circuit, under 802.16 OFDM , www.cree.com/wireless CGH35030F-TB Demonstration Amplifier Circuit Bill of Materials Designator


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PDF CGH35030F CGH35030F CGH3503
2005 - Not Available

Abstract: No abstract text available
Text: 5.625 350 CGH351T500V2 C 692.0 612.0 1.3 1.5 2.0 2.125 3,800 CGH382T350W4L 39.3 25.2


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2005 - A 12-15 GHz High Gain Amplifier

Abstract: HEADER RT
Text: CGH35030F Qty 1 1 1 1 1 1 1 1 3 2 2 2 1 1 1 1 1 CGH35030F-TB Demonstration Amplifier Circuit , % % dB Note: Measured in the CGH35030F-TB amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel , Measured in the CGH35030F-TB test fixture. 3 Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 , Frequency (GHz) Typical EVM and Efficiency at 23 dBm and 36 dBm vs Frequency of CGH35030 CGH35030F in , CGH35030F-TB 26% 24% EVM Drain Efficiency Efficiency 22% 20% 18% 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0.0


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PDF CGH35030F CGH35030F CGH3503 A 12-15 GHz High Gain Amplifier HEADER RT
2008 - CGH35060

Abstract: CGH35060F
Text: the CGH35060F in the CGH35060F-TB VDD = 28 V, IDQ = 250 mA, 802.16-2004 OFDM, PAR = 9.8 dB 16 15 14 , Efficiency vs Output Power of CGH35060F in the CGH35060F-TB VDD = 28 V, IDQ = 250 mA, 802.16-2004 OFDM, PAR , 3.4 GHz 12.2 1.82 1.83 23.1 10.3 Note: Measured in the CGH35060F-TB amplifier circuit, under 802.16 , Measured in the CGH35060F-TB test fixture. 3 Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 , CGH35060F-TB , VDD = 28 V, IDQ = 250 mA S21 16 0 14 S21 -2 12 -4 10 -6 S21 (dB) 8


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PDF CGH35060F CGH35060F CGH3506 10failure CGH35060
2005 - transistor 8772

Abstract: Transistor C 4927 8772 transistor CGH35030F
Text: Efficiency vs Frequency of CGH35030F CGH35030F in Broadband Amplifier Circuit CGH35030F-TB 26% 24% EVM , 3.48, h = 20 mil CGH35030F Qty 1 1 1 1 1 1 1 1 3 2 2 2 1 1 1 1 1 CGH35030F-TB Demonstration , % % dB Note: Measured in the CGH35030F-TB amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel , wafer prior to packaging. 2 Measured in the CGH35030F-TB test fixture. 3 Under 802.16 OFDM, 3.5 MHz , and 36 dBm vs Frequency of CGH35030 CGH35030F in Broadband Amplifier Circuit 6.0 5.5 5.0 4.5 4.0


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PDF CGH35030F CGH35030F CGH3503 transistor 8772 Transistor C 4927 8772 transistor
2005 - Not Available

Abstract: No abstract text available
Text: Vdc Surge ) 350 CGH351T500V2 C 692.0 612.0 520 CGH521T500V2L 470.0 416.0 710 CGH711T500V3 C 345.0


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PDF 12T500W5L CGH312T500X4L CGH412T500X5L CGH692T500X8L CGH272T500X4 CGH362T500X5 CGH621T450V2L CGH102T450V3L CGH142T450V4L CGH182T450V5L
2005 - Not Available

Abstract: No abstract text available
Text: 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless CGH35015F-TB Demonstration Amplifier Circuit Outline 3-000522 REV 4 CGH35015-TB CGH35015S-TB Demonstration Amplifier , Loss Note: Measured in the CGH35015F-TB amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1 , the CGH35015F-TB demonstration circuit and are not source and load pull of the transistor itself. CGH35015F-TB Demonstration Amplifier Circuit Copyright © 2005-2006 Cree, Inc. All rights reserved. The


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PDF CGH35015 CGH35015 CGH3501 35015S
2005 - Not Available

Abstract: No abstract text available
Text: HEADER RT>PLZ .1CEN LK 5POS 1 Q1 CGH35030F 1 C8 C13 J3,J4 CGH35030F-TB , Signal Gain EVM @ 36 dBm Note: Measured in the CGH35030F-TB amplifier circuit, under 802.16 OFDM , Fax: +1.919.313.5778 www.cree.com/wireless CGH35030F-TB Demonstration Amplifier Circuit Schematic CGH35030F-TB Demonstration Amplifier Circuit Outline 3-000538 REV2 CGH35030F-TB Copyright © 2005-2008 , www.cree.com/wireless CGH35030F-TB Demonstration Amplifier Circuit Bill of Materials Designator


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PDF CGH35030F CGH35030F CGH3503
MPF CAPACITOR

Abstract: CGH742T250X3L CGH702T250W4L CGH532T250V5L CGH502T250W3L CGH412T250V4L CGH292T250V3L CGH223T250X8L CGH172T250V2L CGH133T250X5L
Text: 5.625 350 CGH351T500V2 C 692.0 612.0 1.3 1.5 2.0 2.125 3,800 CGH382T350W4L 39.3 25.2


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2005 - Not Available

Abstract: No abstract text available
Text: CGH35015-TB CGH35015S-TB Demonstration Amplifier Circuit Outline 3-000529 REV 1 CGH35015S-TB , Loss Note: Measured in the CGH35015F-TB amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1 , , Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3. 3 Measured in the CGH35015F-TB test , 440166 package. Note 2: Impedances are extracted from the CGH35015F-TB demonstration circuit and are not source and load pull of the transistor itself. CGH35015F-TB Demonstration Amplifier Circuit


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PDF CGH35015 CGH35015 CGH3501 35015S
2014 - Not Available

Abstract: No abstract text available
Text: , W/.500 SMA FLNG 2 HEADER RT>PLZ .1CEN LK 9POS 1 BASEPLATE, CGH35120 1 PCB, RO4350B


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PDF CGHV40100 CGHV40100 CGHV40100, CGHV40 V40100P
1998 - Mallory CGH772T450X8L

Abstract: CGH742T250X3L CGH702T250W4L CGH532T250V5L CGH502T250W3L CGH412T250V4L CGH292T250V3L CGH223T250X8L CGH172T250V2L CGH133T250X5L
Text: CGH351T500V2C CGH521T500V2L CGH711T500V3C CGH901T500V3L CGH112T500V4C CGH122T500W3C CGH132T500V4L


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PDF -40gC CGH351T500V2C CGH521T500V2L CGH711T500V3C CGH901T500V3L CGH112T500V4C CGH122T500W3C CGH132T500V4L CGH152T500V5C CGH152T500W3L Mallory CGH772T450X8L CGH742T250X3L CGH702T250W4L CGH532T250V5L CGH502T250W3L CGH412T250V4L CGH292T250V3L CGH223T250X8L CGH172T250V2L CGH133T250X5L
2007 - CGH25120F

Abstract: CGH09120F CDPA21480 ofdm predistortion CGH27060F 440117 CGH55030F CGH27015F CGH27015P CGH27030F
Text: 802.162004 RCE2 Drain Efficiency Package CGH35015F 3.3 to 3.9 GHz 28 V 2W 12 dB -34 dB 26 % 440166 CGH35015P 3.3 to 3.9 GHz 28 V 2W 12 dB -34 dB 26 % 440196 CGH35030F 3.3 to 3.9 GHz 28 V 4W 12 dB -34 dB 25 % 440166 CGH35060F


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PDF CDPA21480, CGH21240F CDPA21480 CGH25120F CGH09120F ofdm predistortion CGH27060F 440117 CGH55030F CGH27015F CGH27015P CGH27030F
2007 - High Efficiency, High Linearity GaN HEMT Amplifiers for WiMAX Applications

Abstract: ofdm amplifier NEc hemt CGH35015 power amplifier circuit diagram with pcb layout GaN amplifier GaN photo diode CGH35015S operational amplifier discrete schematic CGH27015
Text: linearity under OFDM modulation. CGH35015S-Based Amplifier Design The CGH35015S employs an unmatched , (CGH27015S, 35015S and 35030S) and one using a ceramic/metal packaged transistor- the CGH35030F. The , date. CGH35030S-Based Amplifier Figure 10(a) · Schematic of CGH27015S amplifier. CGH27015S-Based , of package model for CGH35030S. High Frequency Design WiMAX AMPLIFIERS Figure 13a · Schematic of CGH35030S-based amplifier. The design flow was very similar to that of the 15 W devices


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2007 - CGH40025P

Abstract: cgh60015 CGH40010P Gan hemt transistor x band GaN ADS cgh40120F CGH60015D cgh60120D CGH60060D CGH60030D cgh40045f
Text: CGH35120F at 3.6 GHz ­ Triangles are measured values GaN HEMT for Broadband Amplifiers (Example Reference


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