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Part Manufacturer Description Datasheet Download Buy Part
LT1027DCN8-5#PBF Linear Technology LT1027 - Precision 5 Volt Reference; Package: PDIP; Pins: 8; Temperature Range: 0°C to 70°C
LT1027ECN8-5#PBF Linear Technology LT1027 - Precision 5 Volt Reference; Package: PDIP; Pins: 8; Temperature Range: 0°C to 70°C
LT1027ECS8-5 Linear Technology LT1027 - Precision 5 Volt Reference; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C
LT1027ACH-5 Linear Technology IC 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 5 V, MBCY8, METAL CAN, TO-5, 8 PIN, Voltage Reference
LT1027DMH Linear Technology IC 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 5 V, MBCY8, METAL CAN, TO-5, 8 PIN, Voltage Reference
LT1027BCH Linear Technology IC 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 5 V, MBCY8, METAL CAN, TO-5, 8 PIN, Voltage Reference

cce 7100 1027 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2003 - nec 16312 transistor

Abstract:
Text: 0.876 0.984 1.005 1.026 1.039 1.044 1.045 1.043 1.040 1.033 1.027 1.023 1.011 0.999 0.990 , 60.56 64.80 68.73 69.69 70.12 70.66 71.00 71.20 71.30 71.48 71.38 71.29 71.21 71.07 70.95 , 1.027 1.022 1.018 1.015 1.010 1.004 0.997 0.990 0.982 0.974 0.968 0.958 0.952 0.946 0.937 , LCPKG 0.7 nH LB 0.004 nH Base Collector CCE Q1 0.28 pF LE 0.004 nH CCEPKG 0.08 , Q1 Parameters 734.5e-18 MJC Parameters CCB CCE LB LE CCBPKG CCEPKG CBEPKG LBPKG


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PDF NE851M03 NE851M03 2e-15 AN1026. nec 16312 transistor cce 7100 BF 6591 sis 968 nec 16312 kf 203 transistor 16312 transistor cce 7100 1027 7063 transistor
nec 16312 transistor

Abstract:
Text: 0.876 0.984 1.005 1.026 1.039 1.044 1.045 1.043 1.040 1.033 1.027 1.023 1.011 0.999 0.990 , 58.95 60.56 64.80 68.73 69.69 70.12 70.66 71.00 71.20 71.30 71.48 71.38 71.29 71.21 71.07 , 1.027 1.022 1.018 1.015 1.010 1.004 0.997 0.990 0.982 0.974 0.968 0.958 0.952 0.946 0.937 , 0.6 nH LCPKG 0.7 nH LB 0.004 nH Collector CCE Q1 0.28 pF LE 0.004 nH , ) Parameters Q1 Parameters 734.5e-18 MJC Parameters CCB CCE LB LE CCBPKG CCEPKG CBEPKG


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PDF NE851M03 NE851M03 nec 16312 transistor Nec K 872 cce 7100 nec 16312 bjt npn m03 BJT IC Vce AT 1004 S12 AN1026 transistor KF 507 Laser Diode 808 2 pin 1000 mw
2006 - cce 7100

Abstract:
Text: 0.573 0.455 0.364 0.311 0.270 - 7.100 -29.800 -57.100 -69.600 -98.500 -123.900 -150.100 , -108.000 0.289 0.762 0.960 0.994 1.033 1.037 1.038 1.027 1.008 0.993 30.254 23.034 18.157 , LC Base CCE CCEPKG LE CBEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1 , CCE LB LC LE CCBPKG CCEPKG CBEPKG LBX LCX LEX NE68518 0.13e-12 0.14e-12 1.55e-9 , LCX LBX Collector LB Base CCE CCEPKG LE LEX Emitter BJT NONLINEAR MODEL


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PDF NE685 cce 7100 transistor d 13009 NE685 br 8764 cce 7100 1027 BJT BF 331 bf 0252 85500 transistor 2SC5015 transistor MJE 13009
2002 - cce 7100

Abstract:
Text: 0.573 0.455 0.364 0.311 0.270 - 7.100 -29.800 -57.100 -69.600 -98.500 -123.900 -150.100 , -108.000 0.289 0.762 0.960 0.994 1.033 1.037 1.038 1.027 1.008 0.993 30.254 23.034 18.157 , LC Base CCE CCEPKG LE CBEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1 , CCB CCE LB LC LE CCBPKG CCEPKG CBEPKG LBX LCX LEX NE68518 0.13e-12 0.14e-12 1.55e-9 , LCX LBX Collector LB Base CCE CCEPKG LE LEX Emitter BJT NONLINEAR MODEL


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PDF NE685 cce 7100 85500 transistor br 8764 cce 7100 0913 transistor d 13009 539r P 13009 0803 NE685 BF109 2SC5015
LB 11911

Abstract:
Text: -78.400 MAG1 (dB) 0.158 0.381 0.659 0.763 0.939 1.027 1.060 1.062 1.039 1.004 26.071 , 1.041 1.027 1.002 28.178 21.486 17.526 16.062 13.203 9.874 8.077 6.833 5.072 4.419 , -62.300 -74.900 -105.800 -139.300 0.461 0.880 0.996 1.012 1.027 1.027 1.024 1.019 1.006 , 157.000 0.262 0.658 0.907 0.964 1.027 1.052 1.053 1.060 1.040 1.018 30.072 23.222 18.753 , 0.987 1.012 1.038 1.046 1.043 1.041 1.027 1.008 33.236 25.170 20.008 17.550 13.780 11.350


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PDF NE687 8739R NE687 LB 11911 SE 7889 85500 transistor mje 2055 90200 80500 TRANSISTOR 3231 sot-23 2SC5186 2SC5185 2SC5184
2002 - SE 7889

Abstract:
Text: -78.400 MAG1 (dB) 0.158 0.381 0.659 0.763 0.939 1.027 1.060 1.062 1.039 1.004 26.071 , 1.041 1.027 1.002 28.178 21.486 17.526 16.062 13.203 9.874 8.077 6.833 5.072 4.419 , -62.300 -74.900 -105.800 -139.300 0.461 0.880 0.996 1.012 1.027 1.027 1.024 1.019 1.006 , 157.000 0.262 0.658 0.907 0.964 1.027 1.052 1.053 1.060 1.040 1.018 30.072 23.222 18.753 , 0.987 1.012 1.038 1.046 1.043 1.041 1.027 1.008 33.236 25.170 20.008 17.550 13.780 11.350


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PDF NE687 8739R NE687 SE 7889 LB 11911 f 9370 9435 transistor 85500 transistor 80600 49700 2SC5186 2SC5185 2SC5184
tms4c1024

Abstract:
Text: 1027 only) A cce ss tim e from W low (TM S 4C 1 027 only) S tatic colum n d eco de m ode output hold , A0[ 5 A1[ 6 A2[ 7 A3[ 8 v ccE 9 Q ]3 D Us RÄS > NC 1 * A0 D n A2 ] 1 3 V CC 15 CAS V SS W TF , Four Sequential Single-Bit Access Within a Row By Toggling CAS · TM S4C 1027 -StaticC olum n Decode Mode , 4C 1027 -80 MIN MAX TM S 4C 1024 -10 T M S 4 C 1 0 2 5 -1 0 T M S 4C 1027 -10 M IN MAX TM S 4C 1024 -12 TM S 4C 1025 -12 T M S 4C 1027 -12 MIN MAX U N IT v OH Vq l l| H igh-level output


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PDF TMS4C1024, TMS4C1025, TMS4C1027 576-BIT S024F TMS4C1024/5/7S tms4c1024 sn74als6302 SN74ALS6301 4C1024 TMS4C1025
C1027

Abstract:
Text: , Cce SHORTED Cres - CgC Coes = Cce + C qc Cies \ Goes 1 10 100 VCE , vs. Case Temperature H6SSHS2 OGEOfil? C- 1027 This Material Copyrighted By Its Respective


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PDF IRGPH50K 1000C 12-Turn-Off O-247AC C-1028 C1027 c1027 transistor transistor c1027 transistor c1026 C1026 C-1027 c1026 transistor transistor c1026 input output voltage IR2016 IRGPH50K
2001 - kf 13002

Abstract:
Text: 80.0 - 95.5 -101.9 - 102.7 -111.1 -122.9 -136.9 -152.2 -159.8 -161.6 K MAG1 0.40 0.45 , 89.6 - 93.7 - 102.7 -114.4 -128.5 -144.5 -153.9 -157.6 K MAG1 0.19 0.28 0.36 0.43 , LBPKG 0.05 nH LCPKG 0.05 nH LB 0.3 nH Collector Base CCE Q1 0.4 pF LE 0.42 , nH 0.42 nH 0.05 pF 0.05 pF 0.05 nH 0.05 nH 0.05 nH 0 RB Parameters CCB CCE LB LE


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PDF NE894M13 NE894M13 kf 13002 TRANSISTOR 9642 KF 13002 F transistor k 2723 transistor bf 393 S21E 024BF mje 3055 2SC5787
2002 - kf 13002

Abstract:
Text: - 102.7 -111.1 -122.9 -136.9 -152.2 -159.8 -161.6 K MAG1 0.40 0.45 0.54 0.63 0.75 0.81 , - 39.6 - 41.3 - 42.9 - 43.9 - 52.7 - 64.5 - 79.7 - 89.6 - 93.7 - 102.7 -114.4 -128.5 , nH Collector Base CCE Q1 0.4 pF LE 0.42 nH CCEPKG 0.05 pF LEPKG 0.05 nH , 227e-18 TR 1.0e-9 NC 1.17 EG 0.75 XTB Parameters CCB CCE LB LE CCBPKG CCEPKG


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PDF NE894M13 NE894M13 kf 13002 TRANSISTOR 9642 KF 13002 F mje 3055 2SC5787 S21E transistor BR 13002
cce 7100

Abstract:
Text: - 7.100 -2 No.1853-2/3 Collector Current,Iç - mA 2SA1434 No products described or contained , products described or contained herein for an above-mentioned use shall: © A cce p t full responsibility


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PDF 2SAl434-used cce 7100 cce+7100 Low frequency general-purpose amplifiers,
cce 7100

Abstract:
Text: 1 2 3 4 5 Average O u tput C urrent,I q - A 6 5 7 -1.0 -10 2 3 5 7-100 2 , contained herein for an above-mentioned use shall: (T) A cce p t full responsibility and indemnify and


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PDF N2579A SB50-18 N92579-3/3 cce 7100 2579A
2002 - ZS 1032

Abstract:
Text: -105.5 -124.6 -147.2 -170.3 169.2 150.9 138.1 129.5 124.1 116.7 110.1 102.7 97.6 91.4 85.1 79.6 72.9 68.3 , CCB LC LBX Base LB CCE LCX Collector CBEPKG LE CCEPKG LEX Emitter BJT NONLINEAR , 0.07 0.2 0 0.75 0 0.5 2e-12 3 1 0.05 0 50e-12 1.51 0 3 0 1 ADDITIONAL PARAMETERS Parameters CCB CCE


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PDF NE52418 NE52418 ZS 1032 NE 555 8 pin IC
2003 - IC 6201

Abstract:
Text: -105.5 -124.6 -147.2 -170.3 169.2 150.9 138.1 129.5 124.1 116.7 110.1 102.7 97.6 91.4 85.1 , MODEL CCBPKG SCHEMATIC CCB LC LBX LCX Collector LB Base CCE CBEPKG LE , 158 XCJC 0.2 CCE 0.19e-12 NF 1.006 CJS 0 LB 0.83e-9 VAF 1000


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PDF NE52418 NE52418 065e-12 IC 6201 0065E IC 4093 BE ZS 1032 4093 BF IC nec 555 NE52418-T1 rbm 1
Not Available

Abstract:
Text: , tra llic signal, com bustion control, all types of safety devices, etc.). TOSHIBA c annot a cce p t , 0.219 0.279 102.7 82.0 58.6 30.3 -5.8 -51.4 -94.6 -125.1 0.081 0.097 0.111 0.123 0.130


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PDF 10T7BS0
1997 - BFQ 540 application

Abstract:
Text: 800 MHz 2 (5) Unit fT 7.5 GHz Ccb 0.4 pF Cce 0.3 pF Ceb 1.0 , ­51.3 ­ 102.7 ­129.7 ­156.6 ­171.8 174.2 159.7 140.9 135.5 ­60.5 ­114.6 ­141.2 ­165.8 ­178.5


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PDF BFQ65 D-74025 17-Apr-96 BFQ 540 application BFQ65 BFQ 540
1995 - 5252 F ic

Abstract:
Text: GHz Ccb 0.4 pF Cce 0.3 pF Ceb 1.0 pF F F 1.3 1.7 dB dB F F , ­ 102.7 ­129.7 ­156.6 ­171.8 174.2 159.7 140.9 135.5 ­60.5 ­114.6 ­141.2 ­165.8 ­178.5 169.5


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PDF D-74025 5252 F ic BFQ 540 application 5252 F 1009 IC 7560 transistor BFQ 263
kf 13002

Abstract:
Text: - 102.7 -111.1 -122.9 -136.9 -152.2 -159.8 -161.6 K MAG1 0.40 0.45 0.54 0.63 0.75 0.81 , - 39.6 - 41.3 - 42.9 - 43.9 - 52.7 - 64.5 - 79.7 - 89.6 - 93.7 - 102.7 -114.4 -128.5 , nH Collector Base CCE Q1 0.4 pF LE 0.42 nH CCEPKG 0.05 pF LEPKG 0.05 nH , 0.05 nH 0 RB Parameters CCB CCE LB LE CCBPKG CCEPKG LBX LCX LEX 1.11 RE


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PDF NE894M13 NE894M13 kf 13002 2SC5787 TRANSISTOR 9642 NE894M13-A NE894M13-T3-A rf npn power transistor c 10-12 ghz s-1125 S21E
2005 - IB 6410

Abstract:
Text: 7.898 4.669 3.781 3.134 2.266 1.773 1.442 S12 ANG 140.8 113.4 102.7 63.0 47.0 32.4 5.9 , LBX LB 0.15nH CCB Q1 1.3nH 0.58nH CCE BASE 0.15pF CCE_PKG 0.5pF CBE_PKG , VTF 4.58 VAR 18 ITF 0.01 CCB 0.05e-12 IKR 0.015 PTF 0 CCE


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PDF NE696M01 NE696M01 NE685) OT363 IB 6410 IC 7107 lex m01 001 NE685 NE696M01-T1 NE696M01-T1-A S21E
2003 - nec K 3570

Abstract:
Text: 7.898 4.669 3.781 3.134 2.266 1.773 1.442 S12 ANG 140.8 113.4 102.7 63.0 47.0 32.4 5.9 , LBX LB 0.15nH CCB 1.3nH BASE Q1 0.58nH CCE 0.15pF CCE_PKG 0.5pF CBE_PKG , 4.58 VAR 18 ITF 0.01 CCB 0.05e-12 IKR 0.015 PTF 0 CCE 0.15e-12


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PDF NE696M01 NE696M01 NE685) OT363 4e-12 18e-12 696M01 nec K 3570 bf 695 ikr 251 OF BJT 547 S21E NE696M01-T1 NE685 bjt 522 lex m01 001
2007 - KF 13002 F

Abstract:
Text: 0.261 - 95.5 1.03 0.331 -101.9 0.99 0.369 - 102.7 0.95 0.379 -111.1 0.91 0.384 -122.9 0.89 , 1.04 0.345 - 64.5 1.05 0.373 - 79.7 1.00 0.439 - 89.6 0.93 0.483 - 93.7 0.86 0.499 - 102.7 , 0.05 pF CCB 0.01 pF LBPKG 0.05 nH LCPKG 0.05 nH LB 0.3 nH Base Collector CCE Q1 , Parameters CCB CCE LB LE


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PDF NE894M13 NE894M13 KF 13002 F TRANSISTOR 9642 kf 13002 rbm 0505 2SC5787 S21E Q1 k 1821 NE894M13-T3-A NE894M13-A
2005 - transistor NEC D 882 p

Abstract:
Text: 8.644 4.745 3.260 2.478 2.009 1.681 1.277 1.027 0.852 0.714 0.605 ANG 155.0 138.0 108.8 89.5 78.7 70.1 , -76.2 -100.3 -119.1 -133.0 -143.9 -153.0 -160.7 -166.9 -173.7 161.3 139.8 119.5 102.7 9.820 9.367 7.387 , NE85618 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LCX LBX Base LB LC CCE Collector CBEPKG LE , ohms volts amps ADDITIONAL PARAMETERS Parameters CCB CCE LB LC LE CCBPKG CCEPKG CBEPKG LBX LCX LEX , Q1 LCX LBX Base LB CCE Collector LE CCEPKG LEX Emitter BJT NONLINEAR MODEL


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PDF NE856 transistor NEC D 882 p NE85630-T1-A Transistor BF 479 transistor c 1349
2006 - 016p

Abstract:
Text: 8.644 4.745 3.260 2.478 2.009 1.681 1.277 1.027 0.852 0.714 0.605 S22 K ANG MAG1 , -143.9 -153.0 -160.7 -166.9 -173.7 161.3 139.8 119.5 102.7 -18.6 -39.4 -75.7 -121.3 -146.2 , CCBPKG CCB LCX LBX LB Collector LC Base CCE CBEPKG CCEPKG LE LEX Emitter , 1.1e-12 VJC 0.7 Parameters CCB CCE LB LC LE CCBPKG CCEPKG CBEPKG LBX LCX LEX , Base CCE CCEPKG LE LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1) UNITS Parameter


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PDF NE856 016p NE85633-T1B-A transistor NEC b 882 p NEC NE85635 NEC 2501 LE 737 NE85600 mje 1303 3S214 2SC5011 13 608
NE856

Abstract:
Text: 3.260 2.478 2.009 1.681 1.277 1.027 0.852 0.714 0.605 S22 K ANG MAG1 MAG ANG , 161.3 139.8 119.5 102.7 -18.6 -39.4 -75.7 -121.3 -146.2 -163.3 -176.2 173.0 162.7 153.7 , CCBPKG CCB LCX LBX LB Collector LC Base CCE CBEPKG CCEPKG LE LEX Emitter , VJC 0.7 Parameters CCB CCE LB LC LE CCBPKG CCEPKG CBEPKG LBX LCX LEX NE85618 , Base CCE CCEPKG LE LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1) UNITS Parameter


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PDF NE856 NE856 Transistor BJT 547 b NE AND micro-X Micro-X Marking 865 low noise Micro-X marking "K" ic nec 2501 668 0624 2SC5011 2SC5006 2SC4226
2sc3357

Abstract:
Text: 8.644 4.745 3.260 2.478 2.009 1.681 1.277 1.027 0.852 0.714 0.605 S22 K ANG MAG1 , 161.3 139.8 119.5 102.7 -18.6 -39.4 -75.7 -121.3 -146.2 -163.3 -176.2 173.0 162.7 153.7 , CCBPKG CCB LCX LBX LB Collector LC Base CCE CBEPKG CCEPKG LE LEX Emitter , 1.1e-12 VJC 0.7 Parameters CCB CCE LB LC LE CCBPKG CCEPKG CBEPKG LBX LCX LEX , Base CCE CCEPKG LE LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1) UNITS Parameter


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PDF NE856 NE856 NE85632 NE85633-T1B NE85634-T1 NE85635 NE85639-T1 NE85639R-T1 2sc3357 973-120 NE85600 NE AND micro-X Micro-X Marking 865 marking K "micro x" 2SC5011 2SC5006 transistor marking 551 sot-89
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