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Part Manufacturer Description Datasheet Download Buy Part
LTC1064-4 Linear Technology IC SWITCHED CAPACITOR FILTER, BUTTERWORTH, LOWPASS, PDIP14, Active Filter
LTC1060MJ/883 Linear Technology IC DUAL SWITCHED CAPACITOR FILTER, RESISTOR PROGRAMMABLE, UNIVERSAL, CDIP20, CERDIP-20, Active Filter
LTC1061MS Linear Technology IC TRIPLE SWITCHED CAPACITOR FILTER, UNIVERSAL, PDSO20, PLASTIC, SOL-20, Active Filter
LTC1064-2MJ Linear Technology IC SWITCHED CAPACITOR FILTER, BUTTERWORTH, LOWPASS, CDIP14, 0.300 INCH, HERMETIC SEALED, CERDIP-14, Active Filter
LTC1064-4MJ/883B Linear Technology IC SWITCHED CAPACITOR FILTER, BUTTERWORTH, LOWPASS, CDIP14, CERDIP-14, Active Filter
LTC1064-7MJ#TRPBF Linear Technology IC SWITCHED CAPACITOR FILTER, BESSEL, LOWPASS, CDIP14, LEAD FREE, CERDIP-14, Active Filter

capacitor 10 nf Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
vk200 rf choke

Abstract: vk200 MRF156 VK200 r.f choke arco 469 340G-02 choke vk200 MOSFET J220 MRF156120 Arco 469 ceramic capacitor
Text: 469 80- 480 pF, ARCO 466 0.1 Chip Capacitor 0.01 Ceramic Disk Capacitor 10 nF , Electrolytic Capacitor , Chip Capacitor 0.01 Ceramic Disk Capacitor 10 nF , Electrolytic Capacitor L1 L2 R1, R2 R3 RFC1, RFC2 , 80-480 pF, ARCO 466 0.1 Chip Capacitor 0.01 Ceramic Disk Capacitor 10 |iF, Electrolytic Capacitor L1 , = 10V, lD = 10 A> Forward Transconductance (V d s = 10 V ,Id = 5A) DYNAMIC CHARACTERISTICS Input , " Diameter 12 AWG, Tin Copper Wire 100 £2, 1 W 51 Q, 1 W VK200 RF Choke Figure 10 . MRF156 60 MHz Test


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PDF MRF156 MRF156R 340G-02, O-264AA) VK200 MRF156120 MRF156R 83-j3 vk200 rf choke VK200 r.f choke arco 469 340G-02 choke vk200 MOSFET J220 Arco 469 ceramic capacitor
OM961

Abstract: OM991 hybrid audio amplifier PHILIPS WIDE BAND AMPLIFIERS Audio Power Amplifiers KL-139 philips om961
Text: C1 10 V capacitor 47 nF C2 capacitor ( 10 %) 270 pF C3 capacitor ( 10 %) 120 pF C4 100 V capacitor 100 |iF C5 63 V capacitor 470 nF C6 100 V capacitor 100 nF C7 63 V capacitor 10 nF C8 63 V capacitor 10 nF C9 63 V capacitor 1HF L inductor 4 |iH Rl load resistance 4 or 8 Ì2 July 1991 911 , 1 1.4 - 1.4 1.7 V V Ri input impedance determined by input circuitry - 10 - kn Go open loop gain , frequency response P0 = rated value - 10 dB (-1 dB) 30 - 40000 Hz fp power bandwidth -3dB 20 - 40000 Hz S/N


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PDF OM961/OM991 OM961 OM991 7Z75800 7Z75802 /OM991 hybrid audio amplifier PHILIPS WIDE BAND AMPLIFIERS Audio Power Amplifiers KL-139 philips om961
2010 - TL235

Abstract: LM78L05ACM-ND LM78L05ACMND PTFB091507 TL230 ATC100B330JW500XB TL1081
Text: C209 C210 Description Chip capacitor , 33 pF Chip capacitor , 4.71 µF Capacitor , 10 nF Chip capacitor , 56 pF Chip capacitor , 3.3 pF Chip capacitor , 3.9 pF Chip capacitor , 1.5 pF Capacitor , 10 nF Chip capacitor , 4.7 pF Electrolytic cap., 100 uF, 50 V Chip capacitor , 1.2 pF Capacitor , 10 nF Chip capacitor , 56 , , 10 nF Chip capacitor , 1 pF Chip capacitor , 1 µF Tantalum capacitor , 10 µF, 35 V Chip capacitor , 1 nF Chip capacitor , 100 nF Resistor, 10 Resistor, 5.1 Resistor, 10 Resistor, 1.3k Resistor, 1.2k


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PDF PTFB091507FH PTFB091507FH H-34288-4/2 16ubstances. TL235 LM78L05ACM-ND LM78L05ACMND PTFB091507 TL230 ATC100B330JW500XB TL1081
transistor tt 2222

Abstract: itt 2222 TT 2222 npn MRC113 MRC114 2222-581 TT 2222 bc32 transistor Philips 2222-581 ITT 2222 A
Text: ceramic chip capacitor 100 nF , 50 V 2222 581 76641 C13, C14 multilayer ceramic chip capacitor 10 nF , 50 , ) 68 pF, 500 V C27, C28 electrolytic capacitor 10 nF , 63 V 2222 030 28109 L1, L3 stripline (note 2 , capacitor 10 nF , 50 V 2222 581 76627 C15, C16 multilayer ceramic chip capacitor (note 1) 330 pF, 200 V , (note 1) 68 pF, 500 V C27, C28 electrolytic capacitor 10 nF , 63 V 2222 030 28109 L1, L3 stripline , capacitor 1 HF, 63 V 2222 085 78108 C7, C8 electrolytic capacitor 10 jiF, 10 V 2222 085 75109 C9, C10


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PDF BLV948 OT262A2 PINNING-SOT262A2 2X100 15K/W; 15K/W transistor tt 2222 itt 2222 TT 2222 npn MRC113 MRC114 2222-581 TT 2222 bc32 transistor Philips 2222-581 ITT 2222 A
c38 transistor

Abstract: PHILIPS 4330 030 36300 transistor tt 2222 c39 transistor L33 TRANSISTOR TT 2222 npn 4330 030 36 ferroxcube FERROXCUBE 4330 b3171 transistor c37
Text: 1 HF, 63 V 2222 085 78108 C7, C8 electrolytic capacitor 10 nF , 10 V 2222 085 75109 C9.C10, C29 , capacitor 100 nF , 50 V 2222 581 76641 C13, C14 multilayer ceramic chip capacitor 10 nF , 50 V 2222 581 , 2222 085 78108 C7, C8 electrolytic capacitor 10 nF , 10 V 2222 085 75109 C9, C10, C29, C30, C37, C38 , , 50 V 2222 581 76641 C13, C14 multilayer ceramic chip capacitor 10 nF , 50 V 2222 581 76627 C15 , , type 5201) 0.8 to 10 pF C25, C26 multilayer ceramic chip capacitor (note 1) 68 pF, 500 V C27, C28


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PDF D0b31t BLV948 OT262A2 MRC117 2x100 c38 transistor PHILIPS 4330 030 36300 transistor tt 2222 c39 transistor L33 TRANSISTOR TT 2222 npn 4330 030 36 ferroxcube FERROXCUBE 4330 b3171 transistor c37
1998 - MBB754

Abstract: BFG198 npn 2222 transistor
Text: 851 12128 C1, C4, C6, C7 multilayer ceramic capacitor 10 nF 2222 590 08627 C3 multilayer ceramic capacitor 10 nF 2222 851 12128 C5 (note 1) multilayer ceramic capacitor 10 nF 2222 629 08103 C8 multilayer ceramic capacitor 1.5 pF 2222 851 12158 L1 , - - 10 V IC DC collector current - - 100 mA Ptot total power , emitter - 20 V collector-emitter voltage open base - 10 V emitter-base voltage


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PDF BFG198 OT223 MSB002 OT223. MBB754 BFG198 npn 2222 transistor
TRANSISTOR NPN 6822

Abstract: 4046 application note philips 6822 npn transistor 6822 D 1398 Transistor transistor 3305 22716 transistor d 1556 transistor 6822 transistor ROE ELECTROLYTIC CAPACITOR
Text: DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1 electrolytic capacitor 10 nF , 63 V C2, C10 ceramic capacitor 22 nF C3 tantalum capacitor 10 nF , 50 V AT-3-7-271SL C4, C9 chip capacitor (note 1) 1000pF C5, C8 tuning capacitor (note 1) 0.8 to 10 pF C6, C7 chip capacitor (note 1) 4.7 pF L1.L2 , 10 vCE (V) 100 "U = 75°C. I Region of permissible DC operation. II Possible extension provided R8E = < 10 £2. Fig.3 DC SOAR. June 1992 56 Philips Semiconductors T-33-05 Product specification


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PDF LEE1015TA 711G82b OT122 T-33-05 711002b 004b200 TRANSISTOR NPN 6822 4046 application note philips 6822 npn transistor 6822 D 1398 Transistor transistor 3305 22716 transistor d 1556 transistor 6822 transistor ROE ELECTROLYTIC CAPACITOR
philips ferroxcube 4c6

Abstract: ferroxcube 4322 020 97171 68w transistor transistor 68W MCA264 FERROXCUBE 4330 choke marking nb 03 BLF175 philips ferroxcube ferroxcube 4322
Text: multilayer ceramic chip capacitor 3x 10 nF 2222 852 47103 C3, C4, C6 multilayer ceramic chip capacitor 100 nF 2222 852 47104 C5 multilayer ceramic chip capacitor 10 nF 2222 852 47103 C7 multilayer ceramic chip capacitor 3x 100 nF 2222 852 47104 C8 aluminium electrolytic capacitor 10 nF , 63 V 2222 030 , multilayer ceramic chip capacitor 100 nF 2222 852 47104 C7 multilayer ceramic chip capacitor (note 1) 10 pF C12 aluminium electrolytic capacitor 10 nF , 63 V 2222 030 28109 L1 9 turns enamelled 1 mm copper


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PDF BLF175 0G43712 MBB072-2 OT123 711DflSb D04372b philips ferroxcube 4c6 ferroxcube 4322 020 97171 68w transistor transistor 68W MCA264 FERROXCUBE 4330 choke marking nb 03 BLF175 philips ferroxcube ferroxcube 4322
Philips 2222 capacitor

Abstract: philips capacitor philips capacitor 2222
Text: nF C7 multilayer ceramic chip capacitor 3 x 100 nF 2222 852 47104 2222 852 47104 C5 multilayer ceramic chip capacitor 10 nF 2222 852 47103 C7 multilayer ceramic chip capacitor 3 x 100 nF 2222 852 47104 C8 electrolytic capacitor 2.2 pF, 63 V C9, C10 multilayer , (note 1) 1 nF C8 multilayer ceramic chip capacitor 100 nF 2222 852 47104 C11 multilayer ceramic chip capacitor 10 nF 2222 852 47103 C12 multilayer ceramic chip capacitor 3


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PDF BLF177 OT121 Philips 2222 capacitor philips capacitor philips capacitor 2222
2010 - VCO940ME03

Abstract: No abstract text available
Text: Capacitor 10 pF 0603 Capacitor 22 µF 0805 Capacitor 1 nF 0603 Capacitor 100 pF 0603 Capacitor 1 µF 16 V 0603 Capacitor 10 nF 0603 Capacitor 4.7 µF 10 V 0603 Capacitor 10 nF 0603 Capacitor 22 pF 0603 Capacitor 0.1 µF 0603 Capacitor 10 µF 0805 LED Diode 1N4001 DO-41 SD103C 20 V DO35 Red LED , , R23 R24, R25 R26, R29 S1 T2, T4 to T17 T3 Description Capacitor 680 pF 0603 Capacitor 8.2 nF , Fractional-N PLL Frequency Synthesizer FEATURES 5.8 GHz) on board. The evaluation board is set up for a 10


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PDF UG-123 UG08972-0-10/12 VCO940ME03
MRC106

Abstract: LI 20 AB c38 transistor MRC112 C360 BLV945A cq 636 g transistor ferroxcube 4322 TRANSISTOR bh 4322 057
Text: 2.2 |iF, 35 V 2022 019 00058 C12, C13 electrolytic capacitor 10 jxF, 10 V 2222 085 75109 C14, C15 multilayer ceramic chip capacitor 100 nF , 50 V 2222 581 76641 C16, C17 multilayer ceramic chip capacitor 10 nF , 50 V 2222 581 76627 C20, C21, C26, C27 multilayer ceramic chip capacitor (note 1 ) 39 pF, 500 V C24, C25 electrolytic capacitor 10 nF , 63 V 2222 030 28109 C36 multilayer ceramic chip capacitor , , C9, C22, C23, C34, C35 tantalum capacitor 1 nF , 35 V 2022 019 00056 C6, C7, C18, C19, C30, C31, C32


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PDF BLV945A OT324 MRC107 MRC106 LI 20 AB c38 transistor MRC112 C360 BLV945A cq 636 g transistor ferroxcube 4322 TRANSISTOR bh 4322 057
BLW898

Abstract: philips resistor 2322 156 795-820 a 1757 transistor SOT171 Tekelec TO
Text: C4, C12 multilayer ceramic chip capacitor 10 nF ; 63 V 2222 592 16627 C5 solid aluminium capacitor 10 nF ; 63 V 2222 030 38109 C6 multilayer ceramic chip capacitor ; note 2 10 pF C7 multilayer , aluminium capacitor 47 nF ; 63 V 2222 031 38479 C11 multilayer ceramic chip capacitor ; note 2 330 pF C13 , 860 25 1.1 >3<1> >9(1) Note 1. Three-tone test signal (-8, -16, and - 10 dB); dim = -63 dB. _WARNING , ) 40 20 n 0 10 20 30 40 vcb (v) lE = ie = 0


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PDF BLW898 OT171A OT171A 711Dfl2ti BLW898 philips resistor 2322 156 795-820 a 1757 transistor SOT171 Tekelec TO
philips catalog potentiometer

Abstract: philips Trimmer 60 pf BLF245B 2222 capacitor philips transistor j127
Text: chip capacitor 10 nF 2222 852 47103 C13.C18 electrolytic capacitor 10 nF , 63 V C15, C16 multilayer , VALUE DIMENSIONS CATALOGUE NO. C7, C9, C12.C14, C17, C19 multilayer ceramic chip capacitor 100 nF 2222 , , R8 0.4 W metal film resistor 10 Ci Notes 1. American Technical Ceramics (ATC) capacitor , type , / 10 100 (1) Current is this area may be limited by RDSlon>. (2)Trt = 25°C. Total device; both , 0 - - 1 HA VGSflh) gate-source threshold voltage l„ = 5mA; VDS= 10 V 2 - 4.5 V fts forward


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PDF bb53131 OT279 BLF245B MCBB26 philips catalog potentiometer philips Trimmer 60 pf BLF245B 2222 capacitor philips transistor j127
2013 - Not Available

Abstract: No abstract text available
Text: capacitor ; 2.2 F; 63 V; MKT; 5 % tolerance R60DF4220506AJ Kemet C13 capacitor ; 10 nF ; 50 V; 0805; X7R; 10 % tolerance C14 capacitor ; 10 nF ; 50 V; 0805; X7R; 10 % tolerance C15 capacitor ; 10 nF ; 50 V; 0805; X7R; 10 % tolerance C16 capacitor ; 10 nF ; 50 V; 0805; X7R; 10 % tolerance C17 capacitor ; 100 nF ; 50 V; 0805; X7R; 10 % tolerance 08055C104KAT2A AVX C18 , ; 100 nF ; 100 V; 0805; X7R; 10 % tolerance; not mounted 08055C104KAT2A AVX C24 capacitor


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PDF UM10689 SSL2109ADB1121 SSL2109T, SSL2109AT, SSL2109ADB1121, SSL2109AT
transistor tt 2222

Abstract: TT 2222 C9011 TZ77 TT 2222 npn sot289 transistor scans sheet BLV58 IJBA970 BH Rf transistor
Text: multilayer ceramic chip capacitor 10 nF 2222 852 47103 C8, C14, C19, C25 multilayer ceramic chip capacitor 100 nF 2222 852 47104 C9, 011, C16, C20, C22, C28 63 V electrolytic capacitor 10 nF C10, C13, C15 , ^vision (MHz) vce (V) Icq (A) p r o sync (W) Gp (dB) dim (dB) (note 1) c.w. class-A 860 25 2x 1.6 25 > 10 , temperature - 200 °C Note 1. Total device, both sections equally loaded. 10 (A) j , \\ \ \ 10 VCE


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PDF 711D6Sb BLV58 BLV58 OT289 OT289 transistor tt 2222 TT 2222 C9011 TZ77 TT 2222 npn sot289 transistor scans sheet IJBA970 BH Rf transistor
2222 kn a

Abstract: 175B BLF277 c17f
Text: ceramic chip capacitor 100 nF 2222 852 47104 C11 multilayer ceramic chip capacitor 10 nF 2222 852 47103 C12 electrolytic capacitor 10 nF , 63 V C14, C15 multilayer ceramic chip capacitor (note 2) 3 X 22 , difference of matched pairs lD = 50 mA; VDS= 10 V - - 100 mV 9(3 forward transconductance lD = 5A;VDS=10V 4.5 6.2 - S ^ds 10 V - 0.2 0.3 í2 'dsx on-state drain current VGS = 10 V; VDS = 10 V - 25 - A c« input capacitance vqs = 0; VDS = 50 V; f = 1


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PDF T-37-Ã BLF277 711002b OT119 2222 kn a 175B BLF277 c17f
3gg22

Abstract: itt 2222 ITT 2222 A Philips 809 08003 mcb882 BLF277 sot-119 Q03GG1 MCB86
Text: multilayer ceramic chip capacitor (note 1) 100 pF C7, C10, C13 multilayer ceramic chip capacitor 100 nF 2222 852 47104 C11 multilayer ceramic chip capacitor 10 nF 2222 852 47103 C12 electrolytic capacitor 10 nF , 63 V C14, C15 multilayer ceramic chip capacitor (note 2) 3 X 22 pF in parallel C16 film , 10 100 500 VDS (V) (1) Current is this area may be limited by ROS(on)- (2) = 25 °C. Fig.2 DC , AV GS gate-source voltage difference of matched pairs lD = 50 mA; VDS= 10 V - - 100 mV 9is forward


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PDF tibS3c131 Q03GG1Ã BLF277 OT119 MBA379 MC0B85 3gg22 itt 2222 ITT 2222 A Philips 809 08003 mcb882 BLF277 sot-119 Q03GG1 MCB86
transistor j127

Abstract: class B push pull power amplifier philips Trimmer 60 pf PHILIPS 4312 amplifier philips Trimmers 60 pf RF push pull power amplifier BLF245B UGA377
Text: , C19 multilayer ceramic chip capacitor 100 nF 2222 852 47104 C8, C10 multilayer ceramic chip capacitor (note 1) 680 pF C11, C20 multilayer ceramic chip capacitor 10 nF 2222 852 47103 C13, C18 electrolytic capacitor 10 nF , 63 V C15, C16 multilayer ceramic chip capacitor (note 1) 100 pF C21, C27 , (th) gate-source threshold voltage lD = 5 mA; VDS= 10 V 2 - 4.5 V 9(3 forward transconductance lD = 0.75 A; VDS= 10 V 600 850 - mS ^DSion) drain-source on-state resistance lD = 0.75 A; VGS = 10 V - 0.8


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PDF BLF245B OT279 MBA379 -1C3S26 transistor j127 class B push pull power amplifier philips Trimmer 60 pf PHILIPS 4312 amplifier philips Trimmers 60 pf RF push pull power amplifier BLF245B UGA377
2010 - Not Available

Abstract: No abstract text available
Text: multilayer ceramic capacitor 10 nF 2222 590 08627 C3 multilayer ceramic capacitor 10 nF 2222 851 12128 C5 (note 1) multilayer ceramic capacitor 10 nF 2222 629 08103 C8 , €­ 20 V VCEO collector-emitter voltage open base   10 V IC DC , €­ 10 V VEBO emitter-base voltage open collector  2.5 V  100 mA , . GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log


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PDF BFG198 OT223 MSB002 OT223. R77/03/pp14
2010 - BFG198

Abstract: microstripline
Text: multilayer ceramic capacitor 10 nF 2222 590 08627 C3 multilayer ceramic capacitor 10 nF 2222 851 12128 C5 (note 1) multilayer ceramic capacitor 10 nF 2222 629 08103 C8 , V VCEO collector-emitter voltage open base 10 V IC DC collector current , voltage open base 10 V VEBO emitter-base voltage open collector 2.5 V , 10 log - dB. 1 ­ s 11 2 1 ­ s 22 2 2


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PDF BFG198 OT223 MSB002 OT223. R77/03/pp14 BFG198 microstripline
1996 - BFG198

Abstract: No abstract text available
Text: , C6, C7 multilayer ceramic capacitor 10 nF 2222 590 08627 C3 multilayer ceramic capacitor 10 nF 2222 851 12128 C5 (note 1) multilayer ceramic capacitor 10 nF 2222 , voltage open base - - 10 V IC DC collector current - - 100 mA Ptot , open base - 10 V VEBO emitter-base voltage open collector - 2.5 V IC , and G UM = 10 log - dB. 2) ( 1 ­ s 2 ( 1


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PDF BFG198 OT223 MSB002 OT223. CGY2020G SCA50 647021/1200/01/pp12 BFG198
2002 - PIN diode ADS model

Abstract: PIN attenuator ADS model ll110 simulation ads PIN diode SPICE model advanced design system ADS 10 diode diode ADS model TOKO INDUCTORS MCH18
Text: GHz 2.45 GHz C1 C2 5.6 pF 0402 Chip Capacitor 1.0 pF 0402 Chip Capacitor 5.6 pF 0402 Chip Capacitor 1.0 pF 0402 Chip Capacitor C3, C4 C5 6.8 pF 0402 Chip Capacitor 10 nF 0402 Chip Capacitor 6.8 pF 0402 Chip Capacitor 10 nF 0402 Chip Capacitor L1 L2 33 nH LL1005-FH33N 18 nH , resistor values between 5 K ohms, the unbiased value, and 2.5 ohms the biased value with 5 ­ 10 mA , conditions. Alternatively, the PIN diode APLAC model can be used to replace the parallel capacitor and


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PDF HMPP-3865 5988-8470EN PIN diode ADS model PIN attenuator ADS model ll110 simulation ads PIN diode SPICE model advanced design system ADS 10 diode diode ADS model TOKO INDUCTORS MCH18
IR8200B

Abstract: DIODE 6AA
Text: : Bootstrap capacitor pin for halfH bridge number 1. The recommended bootstrap capacitor ( 10 nF ) is connected , recommended boot­ strap capacitor ( 10 nF ) is connected between pins 10 and 11. Application Guidelines , 1.5 — Logic Low Input Current — - 10 /*A 12 V V|H Logic High Input Voltage 2 'IH Logic High Input Current — . 10 pA Output Current Sense Gain , €” — 1.6 mA iF(off) Flag Output Leakage — — 10 m A tsd Shutdown


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PDF 11-PIN IR8200B IR8200B DIODE 6AA
vHF amplifier module

Abstract: 2222 852 47103 PHILIPS VHF AMPLIFIER MODULE LIST ferrite rg 316 double heatsink catalogue BGY143 broadband amplifier module
Text: DESCRIPTION VALUE CATALOGUE NO. C1, C5 multilayer chip capacitor 1 nF 4822 590 06614 C2, C6 tantalum capacitor 6.8 nF , 35 V 2022 001 00067 C3, C7 multilayer chip capacitor 10 nF 2222 852 47103 C4, C8 multilayer chip capacitor 100 nF 2222 852 47104 L1.L2 1 turn 0.5 mm copper wire on ferrite coil 1 nH 3122 , -20 +90 °c 25 PL (W) MRC257 15 10 5 -50 0 , leakage current VS1 = 0;PD=0 - - 10 mA f frequency range 146 - 174 MHz Pl load power 13 - - W n


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PDF BGY143 OT132B MRCZ73 711002b OT132B. vHF amplifier module 2222 852 47103 PHILIPS VHF AMPLIFIER MODULE LIST ferrite rg 316 double heatsink catalogue BGY143 broadband amplifier module
vHF amplifier module

Abstract: BGY143 S-12 PL-13W RF amplifier module VHF Amplifier Chip vhf power module
Text: DESCRIPTION VALUE CATALOGUE NO C1.C5 multilayer chip capacitor 1 nF 4822 590 06614 C2, C6 tantalum capacitor 6.8 jiF, 35 V 2022 001 00067 C3, C7 multilayer chip capacitor 10 nF 2222 852 47103 C4, C8 multilayer chip capacitor 100 nF 2222 852 47104 L1, L2 1 turn 0.5 mm copper wire on ferrite coil 1 3122 108 20153 , +100 •c Th heatsink operating temperature -20 +90 °C 25 PL (W) 20 15 10 5 MRC257 , VSi = 0; PD = 0 - - 10 mA Pl load power 13 - - W efficiency adjust PD for PL = 13 W 40 48 - % Ha


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PDF BGY143 BGY143 OT132B -SOT132B MSB029 V2022 OT132B. 711DfiBb 01D350b vHF amplifier module S-12 PL-13W RF amplifier module VHF Amplifier Chip vhf power module
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