The Datasheet Archive

Top Results (2)

Part Manufacturer Description Datasheet Download Buy Part
LM3550SP/NOPB Texas Instruments A Flash LED Driver with Automatic Vf and ESR Detection for Mobile Camera Systems 20-UQFN -30 to 85
LM3550SPX/NOPB Texas Instruments A Flash LED Driver with Automatic Vf and ESR Detection for Mobile Camera Systems 20-UQFN -30 to 85

buv48 equivalent Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
BUV48FI

Abstract: bux48a equivalent buv48 equivalent SGS V48A BUV48A bux48 equivalent SGS V48A WITH CIRCUIT DIAGRAM BUX48A application buv48fi-bux48a BUV48
Text: S-THOMSON 3QE D HIGH VOLTAGE POWER SWITCH DESCRIPTION The BUX48/A, BUV48 /A, and BUV48FI/AFI are , Parameter BUX48 BUV48 BUV48FI BUX48A BUV48A BUV48AFI Unit vcer Collector-emitter Voltage (Rbe =10 0) 850 , . Operating Junction Temperature 200 125 125 °C November 1988 1/10 745 BUX48/ BUV48 /BUV48FI-BUX48A , / BUV48 /BUV48FI for BUX48A/BUV48A/BUV48AFI 400 450 V V Vebo Emitter-base Voltage (lc = 0) lE =50 mA 7 30 V VcE(sat)* Collector-emitter Saturation Voltage for BUX48/ BUV48 /BUV48FI lc = 10 A Ib = 2 A lc =


OCR Scan
PDF BUX48/V48/V48FI BUX48A/V48A/V48AFI BUX48/A, BUV48/A, BUV48FI/AFI O-218 ISOWATT218 BUX48 BUV48 BUV48FI BUV48FI bux48a equivalent buv48 equivalent SGS V48A BUV48A bux48 equivalent SGS V48A WITH CIRCUIT DIAGRAM BUX48A application buv48fi-bux48a
1996 - buv48 equivalent

Abstract: BUV48-D BUV48 Applications BUV48 MR854 MM3735 BUV48A 2N6438 2N6339 2N3763
Text: MOTOROLA Order this document by BUV48 /D SEMICONDUCTOR TECHNICAL DATA BUV48 BUV48A , 450 VOLTS V(BR)CEO 850 ­ 1000 VOLTS V(BR)CEX 150 WATTS The BUV48 /BUV48A transistors are , ) Collector­Emitter Voltage BUV48 850 1000 Vdc Emitter Base Voltage VEB 7 Vdc Collector , Time Crossover Time v 2%. BUV48 IC = 8 A IB1 = 1.6 A BUV48A (TC = 100_C) - - , BUV48 BUV48A Delay Time SWITCHING CHARACTERISTICS Resistive Load (Table 1) Output Capacitance


Original
PDF BUV48/D BUV48 BUV48A BUV48/BUV48A BUV48/D* buv48 equivalent BUV48-D BUV48 Applications BUV48 MR854 MM3735 BUV48A 2N6438 2N6339 2N3763
1995 - buv48 equivalent

Abstract: 2n3763 motorola MR854 MM3735 BUV48A 2N6438 2N6339 2N3763 1N4934 BUV48
Text: (VBE = ­1.5 V) W/_C Symbol BUV48 BUV48A Unit VCEO(sus) 400 450 Vdc VCEX , WATTS The BUV48 /BUV48A transistors are designed for high­voltage, high­speed, power switching in , applications such as: SWITCHMODE II Series NPN Silicon Power Transistors BUV48 BUV48A SEMICONDUCTOR TECHNICAL DATA Order this document by BUV48 /D MOTOROLA 2 Motorola Bipolar Power Transistor , v 2%. BUV48 IC = 8 A IB1 = 1.6 A BUV48A (TC = 100_C) - - - - - - 1.5


Original
PDF BUV48/D* BUV48/D buv48 equivalent 2n3763 motorola MR854 MM3735 BUV48A 2N6438 2N6339 2N3763 1N4934 BUV48
2001 - buv48 equivalent

Abstract: 1N4934 2N3763 2N6339 2N6438 BUV48 BUV48A MM3735 MR854
Text: ON Semiconductort BUV48 BUV48A SWITCHMODEt II Series NPN Silicon Power Transistors The BUV48 /BUV48A transistors are designed for high­voltage, high­speed, power switching in inductive , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Rating Symbol BUV48 BUV48A , 1 Publication Order Number: BUV48 /D 2 http://onsemi.com ÎÎÎ Î Î Î Î Î Î Î , - 1.5 2.5 tc - 0.3 0.6 tfi Fall Time Crossover Time BUV48 0.4


Original
PDF BUV48 BUV48A BUV48/BUV48A r14525 BUV48/D buv48 equivalent 1N4934 2N3763 2N6339 2N6438 BUV48 BUV48A MM3735 MR854
1996 - buv48 equivalent

Abstract: BUV48 2N3763 MOTOROLA MM3735 BUV48A 2N6438 2N6339 2N3763 1N4934 MR854
Text: MOTOROLA Order this document by BUV48 /D SEMICONDUCTOR TECHNICAL DATA BUV48 BUV48A , 450 VOLTS V(BR)CEO 850 ­ 1000 VOLTS V(BR)CEX 150 WATTS The BUV48 /BUV48A transistors are , (sus) Collector­Emitter Voltage BUV48 850 1000 Vdc Emitter Base Voltage VEB 7 , v 2%. BUV48 IC = 8 A IB1 = 1.6 A BUV48A (TC = 100_C) - - - - - - 1.5 , , Duty Cycle 2%, VBE(off) = 5 V Tp = 30 µs, VCC = 300 V µs v BUV48 BUV48A Delay Time


Original
PDF BUV48/D BUV48 BUV48A BUV48/BUV48A BUV48/D* buv48 equivalent BUV48 2N3763 MOTOROLA MM3735 BUV48A 2N6438 2N6339 2N3763 1N4934 MR854
BUV48I

Abstract: BUV48AF1 BUV48F1 SGS V48A BUV48FI bux48a equivalent BUX47 BUV48B BUX48A application I v48a
Text: /BUV47FI-BUX47A/BUV47A/BUV47AFI îgure 4 : Vce [sat) Dyn. Test Circuit. +v66 *uv Figure 5 : Equivalent Input , heat spreader-to-heatsink capacitance. ISOWATT218 thermal performance is equivalent to that of the , ˆ BUX48A/V48A/V48AF1 HIGH VOLTAGE POWER SWITCH JESCRIPTION he BUX48/A, BUV48 /A, and BUV48FI/AFI are , Unit BUX48 BUV48 BUV48FI BUX48A BUV48A BUV48AF1 VcER Collector-emitter Voltage (Rbe = 10 ii) 850 , ) Collector-emitter Sustaining Voltage (lB = 0) lc = 200 mA L = 25 mH for BUX48/ BUV48 /BUV48FI for BUX48A/BUV48A


OCR Scan
PDF BUX47/V47/V47FI BUX47A/V47A/47AFI BUX47/A, BUV47/A, BUV47FI/AFI O-218 SOWATT218 BUX47 BUV47 BUV48I BUV48AF1 BUV48F1 SGS V48A BUV48FI bux48a equivalent BUV48B BUX48A application I v48a
buv48 equivalent

Abstract: v48A
Text: BUV48 /BUV48A transistors are designed for high-voltage, high-speed, power switching in inductive , (125°C) BUV48 BU V48A 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V(BR)CEO 850-1000 , Veb ic 'CM oi 'b 'b m pd BUV48 400 860 7 15 30 60 5 20 150 75 BUV48A 450 1000 Unit Vdc Vdc , 1 275 U nit °C/W "C REV 7 Motorola Bipolar Power Transistor Device Data 3-391 BUV48 , ) BUV48 BUV48A ICEX - -'CER T c -2 5 °C T c -1 2 5 "C 'EBO V(BR)EBO - - Symbol Min tv p


OCR Scan
PDF BUV48/BUV48A BUV48 buv48 equivalent v48A
1978 - BUV48V

Abstract: diode by205 by205 diode BY205-400 BUV48 buv48 equivalent by205 TRANSISTOR D 1978 TRANSISTOR 2n2904 2N2222
Text: BUV48 , BUV48A NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK q , ) Collector-emitter voltage (RBE = 10 ) Collector-emitter voltage (IB = 0) SYMBOL BUV48 BUV48A BUV48 BUV48A BUV48 BUV48A VCES VCER VCEO VALUE 850 1000 850 1000 400 450 UNIT V V V , not necessarily include testing of all parameters. 1 BUV48 , BUV48A NPN SILICON POWER , 200 mA L = 25 mH MIN (see Note 2) BUV48 BUV48A TYP MAX 400 450 V VCE =


Original
PDF BUV48, BUV48A OT-93 BUV48 BUV48V diode by205 by205 diode BY205-400 BUV48 buv48 equivalent by205 TRANSISTOR D 1978 TRANSISTOR 2n2904 2N2222
buv48

Abstract: No abstract text available
Text: BUV48 , BUV48A NPN SILICON POWER TRANSISTORS C o p y rig h t© 1997, Power Innovations Limited, UK , otherwise noted) RATING Collector-em itter voltage (V BE = 0 V) BUV48 BUV48A BUV48 BUV48A BUV48 BUV48A V , processing does not necessarily include testing of all parameters. BUV48 , BUV48A NPN SILICON POWER , £2 R be = 10 £2 R be = 10 £2 Ir :0 T c = 125°C T c = 125°C T c = 125°C T c = 125°C (see Note 2) BUV48 BUV48A BUV48 BUV48A BUV48 BUV48A BUV48 BUV48A BUV48 BUV48A MIN 400 450 TYP MAX UNIT 0.2


OCR Scan
PDF BUV48, BUV48A OT-93 BUV48 BUV48A
BUV48

Abstract: BUV48A npn 1000V 100a
Text: Q ÏBAHSYS CUCTROHICS LIMITED BUV48 , BUV48A NPN SILICON POWER TRANSISTORS B C C C E C , Collector-emitter voltage (VBE = 0 V) BUV48 BUV48A vces 850 1000 V Collector-emitter voltage (RBE = 10 Q) BUV48 BUV48A vcer 850 1000 V Collector-emitter voltage (lB = 0) BUV48 BUV48A vceo 400 450 V Continuous , cycle < 2%. BUV48 , BUV48A NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case , ) Collector-emitter sustaining voltage "c = 200 mA L = 25 mH (see Note 2) BUV48 BUV48A 400 450 V VCE = 850 V VBE


OCR Scan
PDF BUV48, BUV48A OT-93 BUV48 BUV48A npn 1000V 100a
1978 - BUV48

Abstract: BUV48A 2N2222 2N2904 BD135 BD136 BY205-400 D44H11 D45H11
Text: BUV48 , BUV48A NPN SILICON POWER TRANSISTORS Rugged Triple-Diffused Planar Construction , collector current SYMBOL BUV48 BUV48A BUV48 BUV48A BUV48 BUV48A VCES VCER VCEO VALUE 850 , without notice. 1 BUV48 , BUV48A NPN SILICON POWER TRANSISTORS electrical characteristics at 25 , voltage TEST CONDITIONS IC = 200 mA L = 25 mH MIN BUV48 BUV48A (see Note 2) TYP MAX 400 450 V VCE = 850 V ICES VBE = 0 BUV48 0.2 Collector-emitter VCE = 1000 V


Original
PDF BUV48, BUV48A OT-93 BUV48 OT-93 BUV48 BUV48A 2N2222 2N2904 BD135 BD136 BY205-400 D44H11 D45H11
1978 - BUV48A

Abstract: buv48
Text: BUV48 , BUV48A NPN SILICON POWER TRANSISTORS Rugged Triple-Diffused Planar Construction 15 , base current Peak base current BUV48 BUV48A BUV48 SYMBOL VCES VCER VALUE 850 1000 850 1000 400 450 15 , applies for tp 2 ms, duty cycle 2%. E T E L O S B O BUV48A BUV48 BUV48A VCEO IC IB ICM IBM ICSM Ptot , subject to change without notice. BUV48 , BUV48A NPN SILICON POWER TRANSISTORS electrical , = IC = IC = 10 A 15 A 8A 12 A 10 A (see Notes 3 and 4) BUV48 BUV48 BUV48A BUV48A BUV48 7 TC = 125


Original
PDF BUV48, BUV48A OT-93 BUV48 TCP765AD SAP765AA
1978 - BUV48A

Abstract: buv48
Text: BUV48 , BUV48A NPN SILICON POWER TRANSISTORS Rugged Triple-Diffused Planar Construction 15 , : This value applies for tp 2 ms, duty cycle 2%. BUV48 BUV48A BUV48 BUV48A BUV48 BUV48A SYMBOL VCES , SEPTEMBER 2002 Specifications are subject to change without notice. BUV48 , BUV48A NPN SILICON POWER , 1 MHz f = 1 MHz (see Notes 3 and 4) BUV48 BUV48 BUV48A BUV48A BUV48 BUV48A 10 150 7 TC = 125°C TC = 125°C TC = 125°C TC = 125°C (see Note 2) BUV48 BUV48A BUV48 BUV48A BUV48 BUV48A BUV48 BUV48A BUV48


Original
PDF BUV48, BUV48A OT-93 global/pdfs/TSP1203 TCP765AD BUV48 SAP765AA
1978 - buv48 equivalent

Abstract: BUV48 D45H11 D44H11 BUV48A BD136 BD135 2N2904 2N2222 BY205-400
Text: BUV48 , BUV48A NPN SILICON POWER TRANSISTORS Rugged Triple-Diffused Planar Construction , collector current SYMBOL BUV48 BUV48A BUV48 BUV48A BUV48 BUV48A VCES VCER VCEO VALUE 850 , without notice. 1 BUV48 , BUV48A NPN SILICON POWER TRANSISTORS electrical characteristics at 25 , voltage TEST CONDITIONS IC = 200 mA L = 25 mH MIN BUV48 BUV48A (see Note 2) TYP MAX 400 450 V VCE = 850 V ICES VBE = 0 BUV48 0.2 Collector-emitter VCE = 1000 V


Original
PDF BUV48, BUV48A OT-93 BUV48 TCP765AD buv48 equivalent BUV48 D45H11 D44H11 BUV48A BD136 BD135 2N2904 2N2222 BY205-400
BUV48 SE

Abstract: I v48a
Text: MOTOROLA Order this document by BUV48 /D SEMICONDUCTOR TECHNICAL DATA B U V48 B UV48A , ) Em itter Base Voltage BUV48 BUV48A Unit V cE O (su s) C o lle cto r-E m itte r Voltage , Vdc) (I q = 8 Ade, V q e = 5 Vdc) hFE BUV48 BUV48A — — — — — — — â , €” 0.3 0.6 tfi — 0.17 0.35 Vdc v CE(sat) BUV48 BUV48A B a se -E m itter , Ÿ = 1.6 Ade) (I q = 8 Ade, Iß = 1.6 Ade, T q = 100°C) Vdc v BE(sat) BUV48 BUV48A DYNAMIC


OCR Scan
PDF BUV48/D UV48A BUV48 SE I v48a
2009 - TIC106M SCR

Abstract: TIC106D equivalent TIP41C EQUIVALENT TIP42C EQUIVALENT bd242 TRANSISTOR equivalent transistor equivalent of BU406 BTB06-600 TIP36C EQUIVALENT TIC116D equivalent TIC126D equivalent
Text: TIPL760A TIPL760C TIPL791 TIPL791A BU426 BU426A BU406 7 BUV47 BUV47A TIPL765 TIPL765A BUV48 , -220 Transistor & Darlington Cross Reference Industry Part No. Recommended Bourns Equivalent BD239 , Industry Recommended Nearest Bourns Part No. Bourns Equivalent Replacement Industry Part No. BD545 , BUV46KK BUV47 BUV47A BUV48 BUV48A BUX84 BUX85 TIP32A TIP32B TIP32C BD545C BD545C BD545C , BDW74C BDW74C 6 Recommended Nearest Bourns Bourns Equivalent Replacement BDW74C BDW74C BDW74D


Original
PDF O-220, OT-93 2M/TSP0904 TIC106M SCR TIC106D equivalent TIP41C EQUIVALENT TIP42C EQUIVALENT bd242 TRANSISTOR equivalent transistor equivalent of BU406 BTB06-600 TIP36C EQUIVALENT TIC116D equivalent TIC126D equivalent
2008 - TIC106D equivalent

Abstract: TIC106M SCR BD249 EQUIVALENT TIP41C EQUIVALENT BT137 equivalent replacement TYN412 TIC225M equivalent malaysia tic226D TIC226D equivalent tic126M equivalent
Text: TIPL760A TIPL760C TIPL791 TIPL791A BU426 BU426A BU406 7 BUV47 BUV47A TIPL765 TIPL765A BUV48 , -220 Transistor & Darlington Cross Reference Industry Part No. Recommended Bourns Equivalent BD239 , Industry Recommended Nearest Bourns Part No. Bourns Equivalent Replacement Industry Part No. BD545 , BUV46KK BUV47 BUV47A BUV48 BUV48A BUX84 BUX85 TIP32A TIP32B TIP32C BD545C BD545C BD545C , BDW74C BDW74C 6 Recommended Nearest Bourns Bourns Equivalent Replacement BDW74C BDW74C BDW74D


Original
PDF O-220, OT-93 2M/TSP0711 TIC106D equivalent TIC106M SCR BD249 EQUIVALENT TIP41C EQUIVALENT BT137 equivalent replacement TYN412 TIC225M equivalent malaysia tic226D TIC226D equivalent tic126M equivalent
BUV48 SE

Abstract: SGSD00036 kkz 10
Text: BUV48 (400A, 10 A). The parameter used to measure the thermal un balance of the devices is the variation , them (VDS for SG SP471, V CE for BUV48 ). The results are shown in Fig. 4 and Fig. 5). SGSP475 shows , Fig. 5 - Variation o f R thj.case vs. P (BIPOLAR) BUV48 SOT-93. The thermal instability has a


OCR Scan
PDF SGS30MA050D1 250fi SGS30M SGS40TA045D: SGS400T045D O-24Q BUV48 SE SGSD00036 kkz 10
2001 - mje13009 equivalent

Abstract: buv48 equivalent BD4202 TIP41C EQUIVALENT BUV47 BD241A MOTOROLA TRANSISTOR REPLACEMENT table for transistor BU108 TIP33C equivalent MJL21193 equivalent
Text: BUV48 /BUV48A transistors are designed for high­voltage, high­speed, power switching in inductive , Deflection Circuits BUV48 BUV48A 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V(BR)CEO 850 , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ v MAXIMUM RATINGS Rating Symbol BUV48 400 850 BUV48A 450 Unit Vdc Vdc Vdc Adc , ÎÎÎ v BUV48 BUV48A ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic OFF , ) L = 25 mH VCEO(sus) Vdc BUV48 BUV48A 400 450 - - - - - - - - Collector Cutoff Current (VCEX


Original
PDF BUV48/BUV48A BUV48 BUV48A TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B mje13009 equivalent buv48 equivalent BD4202 TIP41C EQUIVALENT BUV47 BD241A MOTOROLA TRANSISTOR REPLACEMENT table for transistor BU108 TIP33C equivalent MJL21193 equivalent
kkz 10

Abstract: BUV48
Text: power bipolar device used in the BUV48 (400A, 10A). The parameter used to measure the thermal un balance , voltage across them (Vos for SG SP471, VCE for BUV48 ). The results are shown in Fig. 4 and Fig. 5).


OCR Scan
PDF SGS30MA050D1 SGS40TA045D: S400T045D kkz 10 BUV48
u810 diode

Abstract: diode u810 BU508 BU810 BUV48 SE flyback uc3842 power supply sgsd00031 SGSP321 u810
Text: , SGSP352 Bipolar transistors: BUV48 , BU508A Ultrafast bipolar transistors: SGSD00035 (Hollow Emitter , inve s tig a te d ( BUV48 , BU508A, SG SD00035, SGSD00039) shows that the reverse bias opera ting area


OCR Scan
PDF SGSP321, SGSP352 BUV48, BU508A SGSD00035 SGSD00039 SGSD00031, BU810 u810 diode diode u810 BU508 BUV48 SE flyback uc3842 power supply sgsd00031 SGSP321 u810
D100E

Abstract: ic uc3842 BUV48 SE sgsd00031 SGSD00039 uc3842 application 600V BU508 BU810
Text: are: Power MOS: SGSP321, SGSP352 Bipolar transistors: BUV48 , BU508A Ultrafast bipolar transistors , " phenomenon. The practical evidence for all the transistors inve stigated ( BUV48 , BU508A, SGSD00035, SGSD00039


OCR Scan
PDF SGSP321, SGSP352 BUV48, BU508A SGSD00035 SGSD00039 SGSD00031, BU810 D100E ic uc3842 BUV48 SE sgsd00031 uc3842 application 600V BU508
1995 - buv49

Abstract: BUV48 SE BUW49 buv48 TS morocco BUW48
Text: Time Storage Time Fall Time I C = 40 A I C = 30 A IC = 1 A IB = 4 A IB = 3 A for BUV48 for


Original
PDF BUW48 BUW49 O-218 buv49 BUV48 SE BUW49 buv48 TS morocco
buv48

Abstract: BC 171 NPN transistor transistor buv transistor bc 237c BUV 76 BUV48I transistor BUV 92
Text: operating area. 1 f c E n d /k E n d - 6 16 A - V B E -1.5V BUV48 i BUV 4 8 A T j-1 0 0 « C


OCR Scan
PDF 15A3DIN buv48 BC 171 NPN transistor transistor buv transistor bc 237c BUV 76 BUV48I transistor BUV 92
1999 - D45 TRANSISTOR

Abstract: power bjt advantages and disadvantages transistor 412 BUV98 compatible buv48 equivalent power transistor MTBF IGBT module an363 ST Power bipolar transistors Selection guide IGBT Designers Manual
Text: , against about 1MHz for epi-base devices. Their on-state voltage is usually lower than equivalent , multi-epitaxial mesa transistor the BUV48 , BUV98 etc. Power bipolar transistors represent the most mature of , extent, breakdown voltage. It is interesting to note that there is a certain equivalent output , than that of an equivalent 7/9 APPLICATION NOTE MOSFET. The IGBTs are therefore most popular in , functionally equivalent to power transistors. The added advantages of these transistors is the additional


Original
PDF
Supplyframe Tracking Pixel