GT30J110SRA
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Toshiba Electronic Devices & Storage Corporation
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IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) |
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GA4L3Z(0)-T1-AT
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Renesas Electronics Corporation
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Built-in Resistor Bipolar Transistors |
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KA4F3R(0)-T1-A
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Renesas Electronics Corporation
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Built-in Resistor Bipolar Transistors |
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HD1A3M(0)-T1-AZ
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Renesas Electronics Corporation
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Built-in Resistor Bipolar Transistors |
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GA4A4M(0)-T1-AT
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Renesas Electronics Corporation
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Built-in Resistor Bipolar Transistors |
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KA4L4M(0)-T1-A
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Renesas Electronics Corporation
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Built-in Resistor Bipolar Transistors |
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