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Part Manufacturer Description Datasheet Download Buy Part
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

br a1273 transistor Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2015 - nickel bh curve

Abstract: No abstract text available
Text: E50CH E49SH Br (T) 1.4 E46EH E45EH E41EH 1.3 NMX-S52 series 1.2 NMX-50 series , €‚ 2 Maximum energy product HcJ(*) HcB Br 1.39~1.45 最大エネルギー積 , Production to Commence in FY2015 S49F Br (T) 1.4 46F Dyフリー 1.3 43F Dy free , . NEOMAX® Standard Series 1.5 S52 S50BH 50 Br (T) 1.4 44 S49CH 48BH 46CH 42BH 1.3 , ‰§875 ≧11 388 ~ 422 48 ~ 53 ≧1273 ≧16 358 ~ 397 45 ~ 50 1.24 ~ 1.31


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PDF E50CH E49SH E46EH E45EH E41EH NMX-S52 NMX-50 HG-A27-Eã nickel bh curve
2005 - TRF3761-A

Abstract: TRF3761-E TRF3761-H TRF3761-F TRF3761-C TRF3761-B
Text: offset –127.3 600kHz offset fVCO = 1651MHz, fO = 412.75 MHz 1MHz offset 6MHz offset VCO , €“156.2 10MHz offset –158.4 100kHz offset –127.3 600kHz offset fVCO = 1651MHz, fO = 412.75 MHz


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PDF TRF3761 SLWS181I TRF3761-A TRF3761-E TRF3761-H TRF3761-F TRF3761-C TRF3761-B
2005 - TRF3761-A

Abstract: TRF3761-E TRF3761-H TRF3761-F TRF3761-C TRF3761-B
Text: offset –127.3 600kHz offset fVCO = 1651MHz, fO = 412.75 MHz 1MHz offset 6MHz offset VCO , €“156.2 10MHz offset –158.4 100kHz offset –127.3 600kHz offset fVCO = 1651MHz, fO = 412.75 MHz


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PDF TRF3761 SLWS181I TRF3761-A TRF3761-E TRF3761-H TRF3761-F TRF3761-C TRF3761-B
1999 - high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz

Abstract: Glossary of Microwave Transistor Terminology
Text: derived. (19) IV. Glossary of Microwave Transistor Terminology V( BR )CBO Breakdown voltage of a , High-Frequency Transistor Primer Part I Silicon Bipolar Electrical Characteristics Table of Contents I. Transistor Structure Types , Characteristics . a. Collector-Base Junction, V( BR ) CBO, ICBO . b. Emitter-Base Junction, V( BR ) EBO, IEBO . c


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PDF 5966-3085E high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz Glossary of Microwave Transistor Terminology
1998 - high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz

Abstract: S11A1 Glossary of Microwave Transistor Terminology
Text: shown above were derived. (19) IV. Glossary of Microwave Transistor Terminology V( BR )CBO , High-Frequency Transistor Primer Part I Silicon Bipolar Electrical Characteristics Table of Contents Transistor Structure Types . A , Characteristics . a. Collector-Base Junction, V( BR ) CBO, ICBO . b. Emitter-Base Junction, V( BR ) EBO, IEBO . c


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PDF 5966-3085E high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz S11A1 Glossary of Microwave Transistor Terminology
AN952

Abstract: MJ16016 AN952 MOTOROLA MUR8100 MR826 MJH16008 MJ16018 MJ16008 MJ16004 Ultra-Fast Recovery Rectifiers
Text: breakdown voltage. Conversely, at turn-on, gain limits the transistor 's voltage sustaining ability to V( BR , turned-on, the ability of the transistor to sustain a voltage above V( BR )CEO(sus)is little importance, since , test results that follow. TABLE 1. TRANSISTOR RATINGS Transistor 'C(Max) (Amps) V( BR )CEOIsus) (Volts , rules, a transistor rated for V( BR )CEO(sus) greater than 750 volts would be required. For purposes of , TRANSISTOR SOA Prepared by: Warren Schultz Motorola Power Products Division Traditionally, bipolar power


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PDF AN952 1ATX1871S-2 AN952/D AN952 MJ16016 AN952 MOTOROLA MUR8100 MR826 MJH16008 MJ16018 MJ16008 MJ16004 Ultra-Fast Recovery Rectifiers
1999 - D45 TRANSISTOR

Abstract: power bjt advantages and disadvantages transistor 412 BUV98 compatible buv48 equivalent power transistor MTBF IGBT module an363 ST Power bipolar transistors Selection guide IGBT Designers Manual
Text: base terminal opened, hence the V( BR )CES is the value used to choose the transistor . The V( BR )CEO , , how high the current switched between the V( BR )CEO and V( BR )CES of the transistor is of primary , purpose of this paper is to give a general overview of how to read a transistor specification. We will , the selection of the right transistor are discussed. Some common pitfalls are mentioned and the , specifications with care The specifications for each power switching transistor today cover between three and


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1999 - Not Available

Abstract: No abstract text available
Text: The device can be used as a 10-bit switch with the gates cascaded together to a reference transistor . The low-voltage side of each pass transistor is limited to a voltage set by the reference transistor , transistor . Since, within the device, the characteristics from transistor to transistor are equal, the , input of the reference transistor . The VBIAS input is connected through a pullup resistor (typically , reference transistor is used as the reference voltage (VREF) connection. The VREF input must be less than


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PDF SN74TVC3010 10-BIT SCDS088G 000-V A114-A) 20pplication
1999 - Not Available

Abstract: No abstract text available
Text: The device can be used as a 10-bit switch with the gates cascaded together to a reference transistor . The low-voltage side of each pass transistor is limited to a voltage set by the reference transistor , transistor . Since, within the device, the characteristics from transistor to transistor are equal, the , input of the reference transistor . The VBIAS input is connected through a pullup resistor (typically , reference transistor is used as the reference voltage (VREF) connection. The VREF input must be less than


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PDF SN74TVC3010 10-BIT SCDS088G 000-V A114-A)
1997 - ZHB6790

Abstract: 500mA H-bridge BR27 npn-pnp dual NPN/PNP transistor sot223 partmarking 6 C SM-8 BIPOLAR TRANSISTOR
Text: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6790 PRELIMINARY DATA SHEET ISSUE B JULY 1997 FEATURES , transistor on Q1 and Q3 on or Q2 and Q4 on equally Ptot 1.25 2 W W Derate above 25°C* Any single transistor on Q1 and Q3 on or Q2 and Q4 on equally 10 16 mW/ °C mW/ °C Thermal Resistance - Junction to Ambient* Any single transistor on Q1 and Q3 on or Q2 and Q4 on equally 100 , Resistance Q1 and Q3 or Q2 and Q4 "On" Transient Thermal Resistance Single Transistor "On" 10 2.0


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PDF ZHB6790 OT223) ZHB6790 500mA H-bridge BR27 npn-pnp dual NPN/PNP transistor sot223 partmarking 6 C SM-8 BIPOLAR TRANSISTOR
1999 - Not Available

Abstract: No abstract text available
Text: The device can be used as a 10-bit switch with the gates cascaded together to a reference transistor . The low-voltage side of each pass transistor is limited to a voltage set by the reference transistor , transistor . Since, within the device, the characteristics from transistor to transistor are equal, the , Figure 3). This connection determines the VBIAS input of the reference transistor . The VBIAS input is , is recommended. The opposite side of the reference transistor is used as the reference voltage (VREF


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PDF SN74TVC3010 10-BIT SCDS088G 000-V A114-A) SN74TVC3010
1999 - C101

Abstract: SN74TVC3010 SN74TVC3010DBQR SN74TVC3010DW SN74TVC3010DWR
Text: The device can be used as a 10-bit switch with the gates cascaded together to a reference transistor . The low-voltage side of each pass transistor is limited to a voltage set by the reference transistor , transistor . Since, within the device, the characteristics from transistor to transistor are equal, the , transistors (see Figure 3). This connection determines the VBIAS input of the reference transistor . The VBIAS , on VBIAS is recommended. The opposite side of the reference transistor is used as the reference


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PDF SN74TVC3010 10-BIT SCDS088G 000-V A114-A) SN74TVC3010 C101 SN74TVC3010DBQR SN74TVC3010DW SN74TVC3010DWR
1999 - Not Available

Abstract: No abstract text available
Text: The device can be used as a 10-bit switch with the gates cascaded together to a reference transistor . The low-voltage side of each pass transistor is limited to a voltage set by the reference transistor , transistor . Since, within the device, the characteristics from transistor to transistor are equal, the , input of the reference transistor . The VBIAS input is connected through a pullup resistor (typically , reference transistor is used as the reference voltage (VREF) connection. The VREF input must be less than


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PDF SN74TVC3010 10-BIT SCDS088G 000-V A114-A)
1999 - C101

Abstract: SN74TVC3010 SN74TVC3010DBQR SN74TVC3010DW SN74TVC3010DWR
Text: The device can be used as a 10-bit switch with the gates cascaded together to a reference transistor . The low-voltage side of each pass transistor is limited to a voltage set by the reference transistor , transistor . Since, within the device, the characteristics from transistor to transistor are equal, the , transistors (see Figure 3). This connection determines the VBIAS input of the reference transistor . The VBIAS , on VBIAS is recommended. The opposite side of the reference transistor is used as the reference


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PDF SN74TVC3010 10-BIT SCDS088G 000-V A114-A) SN74TVC3010 C101 SN74TVC3010DBQR SN74TVC3010DW SN74TVC3010DWR
1999 - Not Available

Abstract: No abstract text available
Text: The device can be used as a 10-bit switch with the gates cascaded together to a reference transistor . The low-voltage side of each pass transistor is limited to a voltage set by the reference transistor , transistor . Since, within the device, the characteristics from transistor to transistor are equal, the , input of the reference transistor . The VBIAS input is connected through a pullup resistor (typically , reference transistor is used as the reference voltage (VREF) connection. The VREF input must be less than


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PDF SN74TVC3010 10-BIT SCDS088G 000-V A114-A) 20m/clocks
rt 108 power transistor

Abstract: phonograph preamplifiers transistor j 108 transistor outline X packing transistor arrays 5v pa3046 low noise Darlington Transistor UA3026HM MA3036 jA3018
Text: 'CEO v( BR )CEO v( BR )CBO v( BR )EBO For Each Transistor (Qi, Qj, Q3, Q4) Collector Cutoff Current Collector , €¢ |jA3086 TRANSISTOR AND DIODE ARRAYS FAIRCHILD LINEAR INTEGRATED CIRCUITS GENERAL DESCRIPTION — Fairchild Transistor and Diode Arrays consist of general purpose integrated circuit devices constructed on a , maximum flexibility in circuit design for applications from dc to 120 MHz. Excellent transistor and diode , FAIRCHILD LIC TRANSISTOR AND DIODE ARRAYS • juA30XX SERIES MA3036 • MATCHED TRANSISTOR


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PDF jA3018 HA3018A. A3019. pA3026 MA3036 A3039 jA3045 iiA3046 A3054 jA3086 rt 108 power transistor phonograph preamplifiers transistor j 108 transistor outline X packing transistor arrays 5v pa3046 low noise Darlington Transistor UA3026HM jA3018
2011 - Not Available

Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMDT3946 Preliminary DUAL TRANSISTOR COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR DESCRIPTION The UTC MMDT3946 is a complementary NPN/PNP small signal surface mount transistor . It's suitable for low power amplification and switch. FEATURES , 1 of 5 QW-R218-015.a MMDT3946 MARKING Preliminary DUAL TRANSISTOR PIN , ) Preliminary DUAL TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified.) PARAMETER


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PDF MMDT3946 MMDT3946 MMDT3946L-AL6-R MMDT3946G-AL6-R MMDT3946L-AL6-R OT-363 QW-R218-015ues QW-R218-015
Not Available

Abstract: No abstract text available
Text: Absolute maximum ratings of V( BR )CEO are defined with the test current, Itest, whereas the transistor has , ") B, b Base, base terminal C, c Collector, collector terminal The transistor equivalent circuit (see chapter " Transistor Equivalent Circuit") shows the different capacitances in a transistor , frequency of oscillation CL Load capacitance Frequency by which the power gain of a transistor , base-collector) of a transistor . By applying reverse bias across its terminals, the third terminal is


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PDF
1999 - Not Available

Abstract: No abstract text available
Text: The device can be used as a 10-bit switch with the gates cascaded together to a reference transistor . The low-voltage side of each pass transistor is limited to a voltage set by the reference transistor , transistor . Since, within the device, the characteristics from transistor to transistor are equal, the , input of the reference transistor . The VBIAS input is connected through a pullup resistor (typically , reference transistor is used as the reference voltage (VREF) connection. The VREF input must be less than


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PDF SN74TVC3010 10-BIT SCDS088G 000-V A114-A) MTSS001C 4040064/F MO-153
1995 - lm314

Abstract: surface mount transistor A49 LM3146M lm3146n LM3146 KX 001 10B4 diode N14A M14A DV10
Text: LM3146 High Voltage Transistor Array General Description Features The LM3146 consists of , RRD-B30M115 Printed in U S A LM3146 High Voltage Transistor Array February 1995 Absolute Maximum , (15 seconds) Units Power Dissipation Each transistor TA e 25 C to 55 C 300 mW TA l 55 C , Limits Conditions Min Typ Units Max V( BR )CBO Collector to Base Breakdown Voltage IC e 10 mA IE e 0 40 72 V V( BR )CEO Collector to Emitter Breakdown Voltage IC e 1 mA IB e


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PDF LM3146 14-lead lm314 surface mount transistor A49 LM3146M lm3146n KX 001 10B4 diode N14A M14A DV10
BFQ268

Abstract: No abstract text available
Text: Philips Semiconductors NPN 1 GHz video transistor PHILIPS INTERNATIONAL DESCRIPTION 5bE D _ , silicon epitaxial transistor with emitter-ballasting resistors and a gold sandwich metallization to ensure , a low output capacitance. This transistor is primarily intended for application in the driver for , .1 SOT172A1. A version with V, ( BR )CBO = 115 V, V( BR )CER = 110 V and V( BR )CEO = 95 V is available on , Semiconductors NPN 1 GHz video transistor Product specification T-33-05 - BFQ268; BFQ268/I PHILIPS


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PDF BFQ268; BFQ268/1 711002t) BFQ268 OT172A1) BFQ268/I OT172A3 BFQ268/I 004SbbD
1976 - SN75468

Abstract: Darlington pair IC schematic ULN2003 SN75468DR SN75468N SN75468D SN75469 SN75469N ULN2003A ULN2004A
Text: SN75468, SN75469 DARLINGTON TRANSISTOR ARRAYS SLRS023D - DECEMBER 1976 - REVISED NOVEMBER 2004 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS D 500-mA Rated Collector Current (Single D D D D , SN75469 are high-voltage, high-current Darlington transistor arrays. Each consists of seven npn , . POST OFFICE BOX 655303 · DALLAS, TEXAS 75265 1 SN75468, SN75469 DARLINGTON TRANSISTOR ARRAYS , 655303 · DALLAS, TEXAS 75265 E SN75468, SN75469 DARLINGTON TRANSISTOR ARRAYS SLRS023D -


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PDF SN75468, SN75469 SLRS023D 500-mA SN75468 ULN2003A ULN2004A, SN75468 SN75469 Darlington pair IC schematic ULN2003 SN75468DR SN75468N SN75468D SN75469N ULN2004A
1976 - SN75468

Abstract: No abstract text available
Text: SN75468, SN75469 DARLINGTON TRANSISTOR ARRAYS SLRS023D - DECEMBER 1976 - REVISED NOVEMBER 2004 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS D 500-mA Rated Collector Current (Single D D D D D , /ordering information The SN75468 and SN75469 are high-voltage, high-current Darlington transistor arrays , SN75468, SN75469 DARLINGTON TRANSISTOR ARRAYS SLRS023D - DECEMBER 1976 - REVISED NOVEMBER 2004 logic , POST OFFICE BOX 655303 · DALLAS, TEXAS 75265 SN75468, SN75469 DARLINGTON TRANSISTOR ARRAYS


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PDF SN75468, SN75469 SLRS023D 500-mA ULN2003A ULN2004A, SN75468 SN75469 SN75468
1976 - Not Available

Abstract: No abstract text available
Text: SN75468, SN75469 DARLINGTON TRANSISTOR ARRAYS SLRS023D − DECEMBER 1976 − REVISED NOVEMBER 2004 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS D 500-mA Rated Collector Current , The SN75468 and SN75469 are high-voltage, high-current Darlington transistor arrays. Each consists of , DARLINGTON TRANSISTOR ARRAYS SLRS023D − DECEMBER 1976 − REVISED NOVEMBER 2004 logic diagram 9 1B , DARLINGTON TRANSISTOR ARRAYS SLRS023D − DECEMBER 1976 − REVISED NOVEMBER 2004 absolute maximum


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PDF SN75468, SN75469 SLRS023D 500-mA SN75468 ULN2003A ULN2004A, SN75468 SN75469
1999 - Not Available

Abstract: No abstract text available
Text: The device can be used as a 10-bit switch with the gates cascaded together to a reference transistor . The low-voltage side of each pass transistor is limited to a voltage set by the reference transistor , transistor . Since, within the device, the characteristics from transistor to transistor are equal, the , input of the reference transistor . The VBIAS input is connected through a pullup resistor (typically , reference transistor is used as the reference voltage (VREF) connection. The VREF input must be less than


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PDF SN74TVC3010 10-BIT SCDS088G 000-V A114-A) 20uments
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