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Part Manufacturer Description Datasheet Download Buy Part
LTC2222IUK-11 Linear Technology LTC2222-11 - 11-Bit, 105Msps ADC; Package: QFN; Pins: 48; Temperature Range: -40°C to 85°C
LTC2222CUK-11#PBF Linear Technology LTC2222-11 - 11-Bit, 105Msps ADC; Package: QFN; Pins: 48; Temperature Range: 0°C to 70°C
LTC2222CUK#TRPBF Linear Technology LTC2222 - 12-Bit, 105Msps ADCs; Package: QFN; Pins: 48; Temperature Range: 0°C to 70°C
LTC2222IUK#TR Linear Technology LTC2222 - 12-Bit, 105Msps ADCs; Package: QFN; Pins: 48; Temperature Range: -40°C to 85°C
LTC2222IUK Linear Technology LTC2222 - 12-Bit, 105Msps ADCs; Package: QFN; Pins: 48; Temperature Range: -40°C to 85°C
LTC2222CUK#PBF Linear Technology LTC2222 - 12-Bit, 105Msps ADCs; Package: QFN; Pins: 48; Temperature Range: 0°C to 70°C

br 2222 npn Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2n2222

Abstract: A2222 2n2222a 2221-2N 2222a 2222 kn a npn 2222 2n2221 2N 2222 amd 2907
Text: =10iiA V( BR )CBO 2N 2221 2N 2222 60 V 2N 2221 A 2N 2222 A 75 V Collector-emitter breakdown voltage Tension de claquage collecteur-émetteur lB =0 lc =10mA V * ( BR )CEO 2N 2221 2N 2222 30 V 2N 2221 A 2N 2222 A 40 V Emitter-base breakdown voltage Tension de claquage émetteur-base 'c =° lE =10 juA V( BR ,  NPN SILICON TRANSISTORS, EPITAXIAL PLANAR TRANSISTORS NPN SILICIUM. PLANAR EPITAXIAUX *2N 2221,A *2I\I 2222 ,A Compi, of 2N 2906, A - 2N 2907, A LF or BF small or large signal amplification


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PDF 2221-2N K15mA p20kn 2n2222 A2222 2n2222a 2222a 2222 kn a npn 2222 2n2221 2N 2222 amd 2907
lN2222

Abstract: N2222A MPQ2221 lN2222A MPQ2222 CD79 PQ224 MPQ6001 MPQ2222A MPQ2221A
Text: ~~ , ,.;$:TQ:+$"' - - - nAdc OFF CHARACTERISTICS MPQ2221/ 2222 MPQ2221N2222A V( BR )CEO Collector-Base Breakdown Voltage (IC = 10 pAdc, IE = O) MPQ2221/ 2222 MPQ2221N2222A V( BR )CBO Emitter-Base Breakdown Voltage (IB = 10 pAdc, IC = 0) MPQ2221/ 2222 MPQ2221 N2222A V( BR )EBO Collector , MW2221 MPQ2222 Mn2221A Mn2222A QUAD DUAL-IN-LINE NPN SILICON ANNULAR GENERAL-PURPOSE , ) @ Vcg = 50 Vdc High Collector Breakdown Voltages - V(gR)CEO = 40 Vdc (Min) V( BR )CBO = 60 Vdc


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PDF MW2221 MPQ2222 Mn2221A Mn2222A MPQ2221, MPQ2221A, MPQ2222A 2N2218 2N2222 lN2222 N2222A MPQ2221 lN2222A MPQ2222 CD79 PQ224 MPQ6001 MPQ2222A MPQ2221A
TF411

Abstract: t2222 PN2222A le TF-411
Text: -223 NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring , NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter t a = 25°C unless otherwise noted Test C onditions Min Max Units OFF CHARACTERISTICS V( BR )CEO V( BR )CBO V( BR )EBO IcEX IcBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown , d N M T 2222 ) Current Gain - Bandwidth Product Output Capacitance Input Capacitance Collector


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PDF PN2222A MMBT2222A MMPQ2222 NMT2222 PZT2222A PN2222A MMBT2222A OT-23 OT-223 TF411 t2222 PN2222A le TF-411
2004 - Not Available

Abstract: No abstract text available
Text: SMBT2222A/ MMBT2222A NPN Silicon Switching Transistor High DC current gain: 0.1mA to 500 mA Low , 10 nA V( BR )EBO 6 V( BR )CBO 75 V( BR )CEO 40 V typ. max. Unit 1) Pulse test: t =300µs, D = 2% 2 , 360 mW 10 2 pF Ccb 5 SMBT 2222 /A EHP00739 300 270 Ptot 240 210 180 150 120 90 60 , 2 V CB Permissible pulse load Ptotmax / PtotDC = f (tp ) 10 3 Ptot max 5 Ptot DC SMBT 2222 /A EHP00740 Transition frequency fT = f (IC) VCE = 20V 10 3 fT T SMBT 2222 /A EHP00741 tp D= T tp


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PDF SMBT2222A/ MMBT2222A SMBT2907A VPS05161
Not Available

Abstract: No abstract text available
Text: -223 Mark: 1P MMPQ2222 NMT2222 Mark: .1B SOIC-16 NPN General Purpose Amplifier This device , Conditions Min Max Units O F F C H A R A C T E R IS T IC S V( BR )CEO Collector-Emitter Breakdown Voltage* Iq = 10 mA, Iq = 0 V( BR )CBO Collector-Base Breakdown Voltage lc = 10 pA, lE = 0 V( BR )EBO Emitter-Base Breakdown Voltage lE= IcEX Collector Cutoff Current V qe = , 2.0 V V V V (e x c e p t m m P Q 2 2 2 2 a n d N M T 2222 ) fr Current Gain - Bandwidth


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PDF PN2222A MMBT2222A PZT2222A OT-23 OT-223 MMPQ2222 NMT2222 SOIC-16 PN2222A MMBT2222A
BLY94

Abstract: philips bly94
Text: . POWER TRANSISTOR N-P-N planar epitaxial transistor intended for use in class-A, B and C operated , emitter, I q = 100 mA V( BR )CBO > 65 V Collector-emitter voltage open base, Ic = 100 mA v ( BR )CEO > 36 V Emitter-base voltage open collector; I E = 25 mA v ( BR )EBO , dielectric trimmer C9= 6.8 pF ceramic (code number 2222 809 07004) (code number 2222 809 07008) (code number 2222 809 07011) (code number 2222 809 07015) LI = 36nH; 2turns enamelled Cuwire (1.5


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PDF 002T75fl BLY94 7Z67S60 BLY94 philips bly94
Not Available

Abstract: No abstract text available
Text: /DISCRETE hlZ D_ V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in , AUER PHILIPS/DISCRETE bR E bbSB'lBl DQ2t 17SQ T3T « A P X D BLY93C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f , °C Collector-emitter breakdown voltage V be = 0; I q = 10 mA V ( BR )CES > 65 V Collector-emitter breakdown voltage open base; Iq = 50 mA v ( BR )CEO > 36 V Emitter-base breakdown


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PDF bbS3T31 005T7S7 BLY93C
2005 - MARKING s1P

Abstract: No abstract text available
Text: SMBT2222A/ MMBT2222A NPN Silicon Switching Transistor High DC current gain: 0.1mA to 500 mA Low , 10 nA V( BR )EBO 6 V( BR )CBO 75 V( BR )CEO 40 V typ. max. Unit 1) Pulse test: t =300µs, D = 2% 2 , 360 mW 10 2 pF Ccb 5 SMBT 2222 /A EHP00739 300 270 Ptot 240 210 180 150 120 90 60 , 2 V CB Permissible pulse load Ptotmax / PtotDC = f (tp ) 10 3 Ptot max 5 Ptot DC SMBT 2222 /A EHP00740 Transition frequency fT = f (IC) VCE = 20V 10 3 fT T SMBT 2222 /A EHP00741 tp D= T tp


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PDF SMBT2222A/ MMBT2222A SMBT2907A VPS05161 MARKING s1P
2007 - s1P SOT23

Abstract: 619 SOT23-3 h11e
Text: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor · Low collector-emitter saturation voltage , voltage V( BR )CEO 40 V IC = 10 mA, IB = 0 Collector-base breakdown voltage V( BR )CBO 75 - - V( BR )EBO 6 - - IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC , (IC) Saturation voltage IC = (VBEsat; V CEsat) VCE = 10 V h FE = 10 10 3 SMBT 2222 /A EHP00743 SMBT 2222 /A 10 3 EHP00742 mA h FE C 5 VCE 10 2 150 °C VBE 5


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PDF SMBT2222A/MMBT2222A SMBT2907AW SMBT2222A/MMBT2222A s1P SOT23 619 SOT23-3 h11e
2009 - h11E

Abstract: No abstract text available
Text: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor · Low collector-emitter saturation voltage · , Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage V( BR )CEO 40 IC = 10 mA, IB = 0 Unit V Collector-base breakdown voltage IC = 10 µA, IE = 0 V( BR )CBO V( BR )EBO ICBO 75 6 - µA Emitter-base breakdown voltage IE = 10 µA, IC = 0 , ) VCE = 10 V 10 3 SMBT 2222 /A EHP00743 Saturation voltage IC = (VBEsat ; VCEsat) hFE = 10 10 3 mA


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PDF SMBT2222A/MMBT2222A SMBT2907A MMBT2907A SMBT2222A/MMBT2222A h11E
smd transistor e7

Abstract: smd transistor JE blt50 smd transistor JE 45 smd 809 x transistor transistor 2222 GP 809 GC smd transistor UHF TRANSISTOR transistor SMD t09
Text: excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a SOT223 , PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V( BR )CBO collector-base breakdown voltage open emitter; lc = 5 mA 20 - — V V< BR )CEO collector-emitter breakdown voltage open base; lc = 10 mA 10 - - V V( BR )EBO , trimmer 1.4 to 5.5 pF 2222 809 09004 C2 film dielectric trimmer 1.4 to 5.5 pF 2222 809 09001 C3 film dielectric trimmer 2 to 9 pF 2222 809 09002 C4 film dielectric trimmer 2 to 9 pF 2222 809 09005 C5


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PDF bbS3S31 BLT50 OT223 OT223 MEA222 UBtM51 UEA223 smd transistor e7 smd transistor JE blt50 smd transistor JE 45 smd 809 x transistor transistor 2222 GP 809 GC smd transistor UHF TRANSISTOR transistor SMD t09
smd 809 x transistor

Abstract: smd transistor xf blt50 transistor 2222 4F smd transistor smd transistor 809 philips Trimmer 60 pf transistor 3B1 smd UHF TRANSISTOR transistor 4F
Text: . DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a SOT223 surface mounted envelope and , BLT50 CHARACTERISTICS Tj = 25 °C. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V( BR )CBO collector-base breakdown voltage open emitter; lc = 5 mA 20 - - V V( BR >CEO collector-emitter breakdown voltage open base; lc = 10 mA 10 — — V V( BR )EBO emitter-base breakdown voltage open collector; lE = 1 mA 3 , DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1 film dielectric trimmer 1.4 to 5.5 pF 2222 809 09004 C2 film


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PDF 711062b BLT50 OT223 PINNING-SOT223 MEA222 UEA223 smd 809 x transistor smd transistor xf blt50 transistor 2222 4F smd transistor smd transistor 809 philips Trimmer 60 pf transistor 3B1 smd UHF TRANSISTOR transistor 4F
2006 - h22e

Abstract: No abstract text available
Text: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor · High DC current gain: 0.1 mA to 500 mA · , Collector-emitter breakdown voltage V( BR )CEO 40 Unit V IC = 10 mA, IB = 0 Collector-base breakdown voltage V( BR )CBO 75 - - V( BR )EBO 6 - - IC = 10 µA, IE = 0 Emitter-base , SMBT 2222 /A EHP00743 SMBT 2222 /A 10 3 EHP00742 mA h FE C 5 VCE 10 2 , SMBT 2222 /A 0 VBE sat , VCE sat Transition frequency fT = (IC) VCE = 20 V 10 3 10 -1 3


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PDF SMBT2222A/MMBT2222A SMBT2907AW SMBT2222A/MMBT2222A h22e
transistor tt 2222

Abstract: smd 809 x transistor transistor SMD S33
Text: « (V ) 7.5 PL(W) G p (d B ) 1.2 > 10 Note NPN silicon planar epitaxial , SYMBOL TYP. MAX. UNIT ^ ( BR )CBO collector-base breakdown voltage V< BR )CEO collector-emitter breakdown voltage open base; lc = 10 mA 10 - V ( BR )EBO emitter-base breakdown , circuit) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. 1.4 to 5.5 pF 2222 809 09004 film dielectric trimmer 1.4 to 5.5 pF 2222 809 09001 film dielectric trimmer 2 to 9


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PDF 0DSfl737 BLT50 OT223 bbS3R31 0DS87M3 transistor tt 2222 smd 809 x transistor transistor SMD S33
BLY94

Abstract: VQE 13E philips Trimmer 60 pf transistor 42t Wf VQE 23 F vhf power transistor 50W film dielectric trimmer BLY94 application notes WF VQE 23 D WF VQE 23 e
Text: TRANSISTOR N-P-N planar epitaxial transistor intended for use in class-A, B and C operated mobile , 100 mA; VQE =30 V Collector -stud capacitance V( BR )CBO V( BR )CEO V( BR )EBO > hFE fT -C re 65 36 , of components: Cl= 2to 20 pF film dielectric trimmer (code number 2222 809 07004) C2= 4to 40 pF film dielectric trimmer (code number 2222 809 07008) C3 =C4 = 56 pF ceramic C5 = C6 = C7 = C8 = C9 = 100 pF ceramic 100 nF polyester 4 to 60 pF film dielectric trimmer (code number 2222 809 07011) 4 to 100 pF film


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PDF 7110fl2fc. BLY94 OT-55. Tmb-25 BLY94 VQE 13E philips Trimmer 60 pf transistor 42t Wf VQE 23 F vhf power transistor 50W film dielectric trimmer BLY94 application notes WF VQE 23 D WF VQE 23 e
transistor tt 2222

Abstract: BLY93A ic TT 2222 TT 2222 TT 2222 npn T-33-73 LY93A IEC134 ROTA E Series SOT-56
Text: JL BLY93A V.H.F. POWER TRANSISTOR • \ N-P-N epitaxial planar transistor intended for use in , Feedback capacitance at f = 1 MHz Ic = 100 mA; VCE = 30 V Collector-stud capacitance T-33-13 V( BR )CBO v( BR )CEO v( BR )EBO E E > > 65 V 36 V 4 V 8 ms 8 ms hFE fT typ. 50 10 to 120 typ. 500 MHz typ , trimmer (code number 2222 809 07008) 2'to 22 pF film dielectric trimmer (code number 2222 809 07004) = , 2222 809 07015) 4 to 64 pF film dielectric trimmer (code number 2222 809 07011) turn enamelled Cu


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PDF LY93A BLY93A transistor tt 2222 BLY93A ic TT 2222 TT 2222 TT 2222 npn T-33-73 LY93A IEC134 ROTA E Series SOT-56
BLY94

Abstract: vhf power transistor 50W philips Trimmer 60 pf transistor TT 2222 BLY94 a BLY94 application notes class D 50w sot55 SOT-55 50w rf power transistor
Text: N-P-N planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and , Feedback capacitance IC = 100 mA; VCE = 30 V Collector-stud capacitance V( BR )CBO > 65 V v( BR )CEO > 36 V V( BR )EBO > 4 V E E hFE fr -cre Ccs > > ° ms 8 ms 10 to 120 typ. 500 MHz typ. 75 pF < 130 , dielectric trimmer (code number 2222 809 07004) C2= 4to 40 pF film dielectric trimmer (code number 2222 809 , dielectric trimmer (code number 2222 809 07011) 4 to 100 pF film dielectric trimmer (code number 2222 809


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PDF bbS3131 BLY94 OT-55. Tmb-25 BLY94 vhf power transistor 50W philips Trimmer 60 pf transistor TT 2222 BLY94 a BLY94 application notes class D 50w sot55 SOT-55 50w rf power transistor
Not Available

Abstract: No abstract text available
Text: A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C , voltages Collector-base voltage open emitter, I q = 50 mA V( BR )CBO > 65 V Collector -emitter voltage open base, Ic = 50 mA V( BR )CEO > 36 V Emitter-base voltage open collector; Ij? = 10 mA V( BR )EBO > 4 V E E > > 8 ms 8 ms hFE typ. 50 10 to 120 fT typ , (code number 2222 809 07008) trimmer (code number 2222 809 07004) trimmer (code number 2222 809


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PDF 001420b BLY93A r3774
bvc62

Abstract: transistor BD 139 Transistor 5332 bvc62 smd philips 2322 734 2222 500 16641 transistor BD B1 SMD UT70-25 smd transistor k2 u 9330
Text: (television) in the 470 to 860 MHz frequency band. DESCRIPTION NPN silicon planar transistor with two , . MAX. UNIT V( BR )CBO collector-base breakdown voltage lc = 30 mA; lE = 0 60 - - V V( BR )CEO collector-emitter breakdown voltage lc = 60 mA; lB = 0 28 - V V( BR )EBO emitter-base breakdown voltage lE = 1.2 mA , , C6 multilayer ceramic chip capacitor; 15 nF 805 2222 590 16629 C4 solid aluminium capacitor 47 nF; 25 V 2222 030 36479 C7, C8 multilayer ceramic chip capacitor 10 nF 805 2222 590 16627 C9, C10, C11


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PDF BLV859 OT262B 711002b OT262B. 711Dfi5b bvc62 transistor BD 139 Transistor 5332 bvc62 smd philips 2322 734 2222 500 16641 transistor BD B1 SMD UT70-25 smd transistor k2 u 9330
blv 33 transistor

Abstract: BLV25 rf 2222 vp1020 multilayer
Text: TRANSISTOR N-P-N silicon planar epitaxial transistor primarily for use in v.h.f.-f.m. broadcast transmitters , CHARACTERISTICS Tj = 25 °C VBE =0; lc = 50mA V( BR >CES > 65 V open base; = 200 mA v( BR )CEO > 33 V Emitter-base breakdown voltage open collector; lE = 20 mA v( BR )EBO > 4 V Collector cut-off current VBE = 0; VCE , dielectric.trimmer (cat. no. 2222 809 07015) C2 = C4 = C5 = C6 = C7 = 100 pF (500 V) multilayer ceramic chip , multilayer ceramic chip capacitor (cat. no. 2222 856 13471) C9 = C15 = 40 pF, parallel connection of 4 x 10


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PDF BLV25 blv 33 transistor BLV25 rf 2222 vp1020 multilayer
Philips 2222 capacitor

Abstract: Transistor 2222 431202036640 choke npn 2222 transistor philips carbon film resistor bt53
Text: reliability. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a SOT122 envelope and , °C. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V( BR )CBO collector-base breakdown voltage open emitter; lc = 25 mA 36 - - V V( BR )CEO collector-emitter breakdown voltage open base; lc = 50 mA 16 - - V V( BR )EBO emitter-base breakdown voltage open collector; lE = 5 mA 3.5 - - V 'ces collector-emitter , 2.2+0.25 pF C2, C9, C10 film dielectric trimmer 2 to 18 pF 2222 809 09003 C3 ceramic capacitor 3.9 Â


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PDF BLU15/12 OT122 -SOT122A Philips 2222 capacitor Transistor 2222 431202036640 choke npn 2222 transistor philips carbon film resistor bt53
TRIMMER capacitor 160 pF

Abstract: 7z97443 PTFE trimmer capacitor 4312 020 36642
Text: BLV90/SL V_ UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band. Features: • diffused emitter-ballasting resistors for , Collector-mounting base capacitance v( br )cbo > v( br )ceo > v( br )ebo > ices esbr hfe cc Gre Cc-mb < > > typ , trimmer (cat. no. 2222 809 09001) 2 to 9 pF film dielectric trimmer (cat. no. 2222 809 09002) 5.6 pF , capacitor 3.9 pF multilayer ceramic chip capacitor* 1.2 to 3.5 pF film dielectric trimmer (cat. no. 2222 809


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PDF BLV90/SL OT-172D) TRIMMER capacitor 160 pF 7z97443 PTFE trimmer capacitor 4312 020 36642
ceramic capacitor 39 pf

Abstract: AEA213 MEA208 IEC134
Text: . DESCRIPTION NPN silicon ptanar epitaxial transistor encapsulated in a 4-pin SOT122 envelope. It is designed , transistor BLU10/12 CHARACTERISTICS T, = 25 °C. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V( BR )CBO collector-base breakdown voltage open emitter; lc = 20 mA 36 - — V V( BR >CEO collector-emitter breakdown voltage open base; lc = 40 mA 16 — — V V( BR )EBO emitter-base breakdown voltage open collector; 1E = 2 , pF C2, C9, C10 film dielectric trimmer 2 to 18 pF 2222 809 09003 C3 ceramic capacitor 3.9 pF


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PDF 7110flgb BLU10/12 OT122 -SOT122A MEA208 ceramic capacitor 39 pf AEA213 MEA208 IEC134
Not Available

Abstract: No abstract text available
Text: ) > 60 WARNING DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT , . UNIT V( BR )CBO collector-base breakdown voltage open emitter; lc = 50 mA 36 - - V V( BR )CEO collector-emitter breakdown voltage open base; lc = 100 mA 16.5 - - V ^( BR )EBO emitter-base breakdown voltage open collector; lE= 10 mA 4 “ - V I , trimmer DIMENSIONS CATALOGUE NO. 2.5 to 20 pF 2222 809 07004 film dielectric trimmer 4


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PDF BLV13 bbS3131 MCD211
Not Available

Abstract: No abstract text available
Text: . POWER TRANSISTOR N-P-N silicon planar epitaxial transistor suitable for transmitting applications in , Collector-emitter breakdown voltage V BE = 0; lC = 10m A V ( BR )CES > 60 V Collector-emitter breakdown voltage open base; lc = 50 mA v ( BR )CEO > 30 V Emitter-base breakdown voltage open collector; l E = 4 mA v ( BR )EBO > 4 V Collector cut-off current V BE = 0; V CE = 30 V I ces , C7 = C8 = 1,4 to 5,5 pF film dielectric trimmer (cat. no. 2222 809 09001) C2 = 2 to 9 pF film


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PDF 0D23H3B BLW91
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