2007 - CECC 30701-007 capacitor
Abstract: br 123 s CECC 30801-005 test specification CECC 30701-007 AVX CCR07 CAPACITOR 88011 MIL-C-55074 CKS06 SR30 CECC CAPACITOR AVX Tantalum
Text: , /20, /25 MIL-PRF- 123 50V, 100V (BP, BX and BR ) Style CKS05, CKS06, CKS11, CKS12, CKS14, CKS15, CKS16 , and S Failure Rate Level 50V, 100V, 200V ( BR , BX, BT, BU and BV) Style CKR04, CKR05, CKR05V, CKR06 , , /05, /20, /21, /23 M, P, R and S Failure Rate Level 50V, 100V, 200V (CG, CH, BX and BR ) Style CKR22 , , +15-25 RV) BR (+15-15% no voltage, +15-40 RV) Qual level MIL-C- 123 MIL-C- 123 MIL-C- 123 Voltage , MIL-PRF-20 Established Reliability M, P, R and S Failure Rate Level 50V, 100V, 200V (CX, CK, CJ, CH, CG
|
Original
|
PDF
|
MIL-PRF-20
CCR05,
CCR05V,
CCR06,
CCR06V,
CCR07,
CCR08,
CCR09,
CCR14,
CECC 30701-007 capacitor
br 123 s
CECC 30801-005 test specification
CECC 30701-007
AVX CCR07 CAPACITOR
88011
MIL-C-55074
CKS06
SR30 CECC CAPACITOR
AVX Tantalum
|
2012 - br 123 s
Abstract: HT3030
Text: 152 N2200 123 153 562 682 332 472 BR 333 473 153 183 822 103 NPO 123 153 682 822 222 272 N2200 393 473 183 223 682 822 BR , 563 683 273 333 103 123 BR 5050 152 NPO 4040 .100â BR 3030 , Wright Capacitors, Inc. Excellence. Personified 2610 S . OAK AVE. ⢠SANTA ANA, CA 92707 â , products. 2610 S . OAK AVE. ⢠SANTA ANA, CA 92707 ⢠(714) 546-2490 ⢠Fax: (714) 546-1709 ⢠EMAIL
|
Original
|
PDF
|
was546-2490
br 123 s
HT3030
|
2000 - oasis
Abstract: wd-xslo database tag
Text: > Intel® Corporation< BR >< BR > Phone: ( 123 ) 456-7890< BR > Fax: ( 123 ) 456-7890< BR > Pager: ( 123 ) 456-7890< BR > Cell: ( 123 ) 456-7890< BR >< BR > 1234 Some St.< BR > AnyTown, SomeState 00123< BR >< BR > http , for HTML 2.0 allowing the use of extend the rules of XML when needed. s Since XML and HTML have the same parent, they share similarities: s new tags and attributes. The key here Both are , HTML Doc You mark up, data. s Both are text-based, meaning that the minimum you need to
|
Original
|
PDF
|
org/TR/1998/REC-xml-19980210
TTG22
oasis
wd-xslo
database tag
|
bc 20229
Abstract: capacitor BC 138 axial capacitor electrolytic BC "BC Components" axial esr electrolytic capacitor hf16 IEC 60384-4-2 BC 037 capacitor capacitor BC 021 axial BC 2222 138
Text: 15.3 mm; Form BR Catalogue number: 2222 123 25109. Q Table 3 Ordering information for 123 , 12314479 123 14689 12314101 12314151 12314221 123 14331 12314471 123 14681 12314102 SAL-A FORM BR toi , . ±10% level S 123 83479 123 83689 123 83151 123 83331 123 83681 123 83102 123 83152 123 84339 123 84479 , 10688 12310109 12310159 12310229 123 10339 12310479 12310689 12310101 12310151 SAL-A FORM BR toi ±20% , 123 20339 123 20479 123 20689 123 20101 12320151 SAL-AG<1 ) FORM BA toi. ±10% level S 123 85109 123
|
OCR Scan
|
PDF
|
|
Philips 2222 032 capacitors
Abstract: 2222 123 capacitor philips philips AXIAL ELECTROLYTIC capacitors Philips Electrolytic Capacitor 123 T40 16 ultrasonic Philips Electrolytic Capacitor axial philips ELECTROLYTIC capacitors marking code axial philips axial ceramic capacitor 12314479 80228
Text: ; ±20% Maximum case size: 06.7 x 15.3 mm; Form BR Catalogue number: 2222 123 25109. _ Table 3 , 12314102 SAL-A FORM BR toi. ±20% 123 23479 123 23689 123 23151 123 23331 123 23681 123 23102 123 23152 , SAL-AG<1 ) FORM BA toi. ±10% level S 123 83479 123 83689 123 83151 123 83331 123 83681 123 83102 123 , 12310478 123 10688 12310109 12310159 12310229 123 10339 12310479 12310689 12310101 12310151 SAL-A FORM BR , 20229 123 20339 123 20479 123 20689 123 20101 12320151 SAL-AG<1 ) FORM BA toi. ±10% level S 123 85109
|
OCR Scan
|
PDF
|
12accordance
STD-202"
Philips 2222 032 capacitors
2222 123 capacitor philips
philips AXIAL ELECTROLYTIC capacitors
Philips Electrolytic Capacitor 123
T40 16 ultrasonic
Philips Electrolytic Capacitor axial
philips ELECTROLYTIC capacitors marking code axial
philips axial ceramic capacitor
12314479
80228
|
6789ABC
Abstract: No abstract text available
Text: high (VGH). APPLICATIONS ⢠Gate-in-Panel (GIP) LCD TVs and Monitors D4 6D 123 64#!5 64#$%&5 123 6D 5 1245 64#! 64#$%& 123 6D 1245 64#$%&' 64#!' 123 1245 64#!( 123 6789ABC D789EFA AE 6D ' 64#$%&( 6D ( 1245 64#$%&) 64#!) 123 1245 64#!* 64#$%&* 123 1245 D&1$%& D&1! 123 1245 D&$%& D&! 123 1245 D D!D 123 1245 124 2! D635 123 1 1245 4AE8 123 7BFD D!D"1 D63
|
Original
|
PDF
|
TPS65197
TPS65197
100-kHz
28-Terminal
6789ABC
|
1999 - capacitor BC 138 axial
Abstract: bc 20229 87478 Solid Aluminium SAL cecc 16101 014 24 01 02 80688 BC 109 Transistor Capacitor aluminium military data sheet Passive BC Components transistor Bc 640
Text: capacitors 123 series 10 µF/16 V; ±20% Maximum case size: 6.7 × 15.3 mm; Form BR Catalogue number: 2222 , . ±10% level S SAL-AG(1) FORM BA tol. ±20% 6.7 × 15.3 123 13479 123 23479 123 83479 , tol ±20% SAL-A FORM BR tol ±20% SAL-AG(1) FORM BA tol. ±10% level S SAL-AG(1) FORM BA , ) FORM BA tol. ±10% level S SAL-AG(1) FORM BA tol. ±20% 2.2 6.7 × 15.3 123 17228 123 , BC COMPONENTS DATA SHEET 123 SAL-A Aluminium electrolytic capacitors Solid Al, Axial
|
Original
|
PDF
|
MBB121
capacitor BC 138 axial
bc 20229
87478
Solid Aluminium SAL
cecc 16101 014 24 01 02
80688
BC 109 Transistor
Capacitor aluminium military data sheet
Passive BC Components
transistor Bc 640
|
1997 - 87478
Abstract: axial philips capacitor axial philips ceramic capacitor philips AXIAL ELECTROLYTIC capacitors 27338 8747 SAL-A123 philips axial ceramic capacitor philips ELECTROLYTIC capacitors IEC 384 14/2
Text: BR Catalogue number: 2222 123 25109 Table 3 Ordering information for 123 series; preferred , ±20% SAL-AG FORM BA tol. ±10% level S SAL-AG FORM BA tol. ±20% 47 6.7 × 15.3 123 , ) SAL-A FORM BA tol ±20% SAL-A FORM BR tol ±20% SAL-AG FORM BA tol. ±10% level S SAL-AG , tol ±20% SAL-A FORM BR tol ±20% SAL-AG FORM BA tol. ±10% level S SAL-AG FORM BA tol , SAL-AG 2222 123 6. Form BA ±20% 2222 123 8. Form BA ±10%, level S Table 9 Test procedures and
|
Original
|
PDF
|
MBB121
STD-202"
87478
axial philips capacitor
axial philips ceramic capacitor
philips AXIAL ELECTROLYTIC capacitors
27338
8747
SAL-A123
philips axial ceramic capacitor
philips ELECTROLYTIC capacitors
IEC 384 14/2
|
2000 - 87478
Abstract: aluminum marking code capacitors military aluminum solid capacitor mil std CCB032 "Aluminum Electrolytic Capacitors" P125 016 axial aluminum 122 SAL-RP 2222 10339 80158
Text: 15.3 mm; Form BR Catalogue number: 2222 123 25109. Table 3 UC (V) 6.3 Ordering , . ±10% level S SAL-AG(1) FORM BA tol. ±20% 123 65109 123 85159 123 85229 123 85339 123 , SAL-AG 2222 123 6. Form BA ±20% 2222 123 8. Form BA ±10%, level S Table 9 Test procedures and , BCcomponents DATA SHEET 123 SAL-A Aluminum electrolytic capacitors Solid Al, Axial Product , BCcomponents Product specification Aluminum electrolytic capacitors Solid Al, Axial 123 SAL-A
|
Original
|
PDF
|
MBB121
STD-202"
87478
aluminum marking code capacitors military
aluminum solid capacitor mil std
CCB032
"Aluminum Electrolytic Capacitors"
P125
016 axial aluminum
122 SAL-RP
2222 10339
80158
|
2002 - SEP0525
Abstract: bc 20229
Text: BR Catalogue number: 2222 123 25109. 123 SAL-A Table 3 Ordering information for 123 series , 123 14151 123 14221 123 14331 123 14471 123 14681 123 14102 SAL-A FORM BR tol. ±20% 123 23479 123 , 24151 123 24221 123 24331 123 24471 123 24681 123 24102 SAL-AG(1) FORM BA tol. ±10% level S 123 83479 , 123 10689 123 10101 123 10151 SAL-A FORM BR tol ±20% 123 25109 123 25159 123 25229 123 25339 123 25479 , 123 20151 SAL-AG(1) FORM BA tol. ±10% level S 123 85109 123 85159 123 85229 123 85339 123 85479 123
|
Original
|
PDF
|
STD-202"
SEP0525
bc 20229
|
2008 - Mosfet 080n03ls
Abstract: BSC080N03LS 080N03LS JESD22
Text: [ s ] V DS [V] Rev. 1.23 0.01 page 4 2008-10-07 BSC080N03LS G 5 Typ. output , V J-STD20 and JESD22 Rev. 1.23 page 1 2008-10-07 BSC080N03LS G Maximum ratings, at , =25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V ( BR )DSS V , 30 59 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max , information Rev. 1.23 page 2 2008-10-07 BSC080N03LS G Parameter Values Symbol Conditions
|
Original
|
PDF
|
BSC080N03LS
080N03LS
Mosfet 080n03ls
080N03LS
JESD22
|
2008 - 042N03LS
Abstract: BSC042N03LS JESD22 Mosfet 042n03ls
Text: 10-2 10-1 100 t p [ s ] V DS [V] Rev. 1.23 0.01 page 4 2008-10-06 BSC042N03LS , 1) ±20 V J-STD20 and JESD22 Rev. 1.23 page 1 2008-10-06 BSC042N03LS G Maximum , V ( BR )DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=250 µA 1 , 2.6 42 83 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R , for more detailed information Rev. 1.23 page 2 2008-10-06 BSC042N03LS G Parameter
|
Original
|
PDF
|
BSC042N03LS
042N03LS
042N03LS
JESD22
Mosfet 042n03ls
|
2006 - 020n03ls
Abstract: 020N03L BSC020N03LS BSC020N03LS G
Text: 10-3 10-2 10-1 100 V DS [V] t p [ s ] Rev. 1.23 page 4 2007-07-11 BSC020N03LS , =50 A, V DS=24 V, di /dt =200 A/µs, T j,max=150 °C J-STD20 and JESD22 Rev. 1.23 page 1 , Gate threshold voltage Zero gate voltage drain current V ( BR )DSS V GS=0 V, I D=1 mA V GS(th) I DSS V , 2.3 1.7 1.9 130 100 100 2.9 2 3.3 S nA m RG g fs |V DS|>2|I D|R DS(on)max, I D=30 A 65 , connection. PCB is vertical in still air. See figure 3 for more detailed information 3) Rev. 1.23
|
Original
|
PDF
|
BSC020N03LS
020N03LS
020n03ls
020N03L
BSC020N03LS G
|
MGB043
Abstract: MGB046 2222 123 capacitor philips DIN 1415-1 philips AXIAL ELECTROLYTIC capacitors 15221 87478 philips capacitor 470 Solid Aluminium SAL-A 123 Philips 2222 032
Text: SAL A 10 µF/16 V; ±20% Maximum case size: 6.7 × 15.3 mm; Form BR Catalogue number: 2222 123 25109 , SAL-AG FORM BA tol. ±10% level S SAL-AG FORM BA tol. ±20% 47 6.7 × 15.3 123 13479 123 , FORM BR tol ±20% SAL-AG FORM BA tol. ±10% level S SAL-AG FORM BA tol. ±20% 10 15 22 , SAL-A FORM BR tol ±20% SAL-AG FORM BA tol. ±10% level S SAL-AG FORM BA tol. ±20% 2.2 , SAL-AG 2222 123 6. Form BA ±20% 2222 123 8. Form BA ±10%, level S Table 9 Test procedures and
|
Original
|
PDF
|
MBB121
STD-202"
MGB043
MGB046
2222 123 capacitor philips
DIN 1415-1
philips AXIAL ELECTROLYTIC capacitors
15221
87478
philips capacitor 470
Solid Aluminium SAL-A 123
Philips 2222 032
|
|
2006 - 016n03ls
Abstract: BSC016N03LSG
Text: 10-6 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [ s ] Rev. 1.23 page 4 , waveforms 34 V GS 32 Qg 30 V BR (DSS) [V] 28 26 V g s (th) 24 22 Q g(th) Q , =25 I D=50 A, V DS=24 V, di /dt =200 A/µs, T j,max=150 °C J-STD20 and JESD22 Rev. 1.23 page 1 , Gate threshold voltage Zero gate voltage drain current V ( BR )DSS V GS=0 V, I D=1 mA V GS(th) I DSS V , 1.8 1.3 1.5 130 100 100 2.3 1.6 2.6 S nA m RG g fs |V DS|>2|I D|R DS(on)max, I D=30 A 65
|
Original
|
PDF
|
BSC016N03LS
016N03LS
016n03ls
BSC016N03LSG
|
2001 - Not Available
Abstract: No abstract text available
Text: BR Catalogue number: 2222 123 25109. 123 SAL-A Table 3 Ordering information for 123 series , 123 14151 123 14221 123 14331 123 14471 123 14681 123 14102 SAL-A FORM BR tol. ±20% 123 23479 123 , 24151 123 24221 123 24331 123 24471 123 24681 123 24102 SAL-AG(1) FORM BA tol. ±10% level S 123 83479 , 10689 123 10101 123 10151 SAL-A FORM BR tol ±20% 123 25109 123 25159 123 25229 123 25339 123 25479 123 , ) FORM BA tol. ±10% level S 123 85109 123 85159 123 85229 123 85339 123 85479 123 85689 123 85101 123
|
Original
|
PDF
|
STD-202"
|
2006 - 030N03ls
Abstract: 030n03l PG-TDSON-8
Text: 10-4 10-3 10-2 10-1 100 V DS [V] t p [ s ] Rev. 1.23 page 4 2007-07-11 , =50 A, V DS=24 V, di /dt =200 A/µs, T j,max=150 °C J-STD20 and JESD22 Rev. 1.23 page 1 , Gate threshold voltage Zero gate voltage drain current V ( BR )DSS V GS=0 V, I D=1 mA V GS(th) I DSS V , 3.8 2.5 1.5 98 100 100 4.7 3 2.6 S nA m RG g fs |V DS|>2|I D|R DS(on)max, I D=30 A 49 , connection. PCB is vertical in still air. See figure 3 for more detailed information 3) Rev. 1.23
|
Original
|
PDF
|
BSC030N03LS
030N03LS
030N03ls
030n03l
PG-TDSON-8
|
1999 - Not Available
Abstract: No abstract text available
Text: Rev. 1.23 BSP89 SIPMOS Ò Small-Signal-Transistor Feature · N-Channel · Enhancement mode · , category; DIN IEC 68-1 Page 1 2007-04-23 Rev. 1.23 Thermal Characteristics Parameter , Drain-source breakdown voltage V GS=0, ID=250µA Symbol min. V( BR )DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 240 , without blown air. Page 2 2007-04-23 Rev. 1.23 Electrical Characteristics , at Tj = 25 °C, unless , =100A/µs BSP89 Values min. typ. 0.36 80 11.2 5.2 4 3.5 15.9 18.4 max. 140 16.8 7.8 6 5.3 23.8 27.6 ns S
|
Original
|
PDF
|
BSP89
PG-SOT-223
VPS05163
L6327:
BSP89
|
1996 - transistor 45 f 123
Abstract: Q67000-S306 E6327 BSP 17 D sot 223 marking code BSP BSP123
Text: 10 10 s 10 tp Semiconductor Group 5 Sep-12-1996 BSP 123 Typ. output , BSP 123 SIPMOS ® Small-Signal Transistor · N channel · Enhancement mode · Logic Level · VGS(th) = 0.8.2.0V Pin 1 G Pin 2 D Pin 3 Pin 4 S Type VDS ID RDS(on) Package Marking BSP 123 100 V 0.38 A 6 SOT-223 BSP 123 Type BSP 123 Ordering , -12-1996 BSP 123 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature
|
Original
|
PDF
|
OT-223
Q67000-S306
E6327
Sep-12-1996
transistor 45 f 123
Q67000-S306
E6327
BSP 17 D
sot 223 marking code BSP
BSP123
|
Not Available
Abstract: No abstract text available
Text: ) Package 100 V 0.38 A 6⦠SOT-223 Ordering Code Q67000-S306 D BSP 123 Type BSP 123 S Marking BSP 123 Pin 4 Tape and Reel Information E6327 Maximum Ratings , BSP 123 SIPMOS ® Small-Signal Transistor ⢠N channel ⢠Enhancement mode ⢠Logic Level , 1.7 1 05.99 BSP 123 Maximum Ratings Parameter Symbol Chip or operating temperature , V V ( BR )DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 ËC 100 - - 0.8 1.5 2 VDS =
|
Original
|
PDF
|
OT-223
Q67000-S306
E6327
|
SA170CA
Abstract: SA18 SA18A SA20 SA20A SA22A
Text: 600 48.5 10.3 5.0 S A 6.5 7.22 8.82 10 6.5 400 40.7 12.3 5.0 S A 6.5A 7.22 7.98 10 6.5 400 44.7 11.2 5.0 S A 7.0 7.78 9.51 10 7.0 150 37.6 13.3 6.0 S A 7.0A 7.78 8.60 10 7.0 150 41.7 12.0 , 26.6 18.8 10.0 S A 10A 11.1 12.3 1.0 10.0 1.0 29.4 17.0 10.0 S A 11 , surge resistance Fast response time: typically less than 1.0ps from 0 Volts to V( BR ) for
|
Original
|
PDF
|
0---SA170CA
DO-15
DO-15,
SA160A
SA170
SA170A
SA60A
SA64A
10Volts
SA170CA
SA18
SA18A
SA20
SA20A
SA22A
|
1999 - smd diode marking 271
Abstract: No abstract text available
Text: Rev. 1.23 BSP89 SIPMOS Ò Small-Signal-Transistor Feature · N-Channel · Enhancement mode · , ; DIN IEC 68-1 Page 1 2007-04-23 Rev. 1.23 Thermal Characteristics Parameter Characteristics , Drain-source breakdown voltage V GS=0, ID=250µA Symbol min. V( BR )DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 240 , without blown air. Page 2 2007-04-23 Rev. 1.23 Electrical Characteristics , at Tj = 25 °C, unless , =100A/µs BSP89 Values min. typ. 0.36 80 11.2 5.2 4 3.5 15.9 18.4 max. 140 16.8 7.8 6 5.3 23.8 27.6 ns S
|
Original
|
PDF
|
BSP89
PG-SOT-223
VPS05163
L6327:
BSP89
20ents
smd diode marking 271
|
2008 - BSS225
Abstract: L6327
Text: Transconductance 1) g fs S VDS is zero-hour rated, see note at p.8 Rev. 1.23 page 2 2011-03-08 , 10-3 10-2 10-1 100 101 102 103 t p [ s ] V DS [V] Rev. 1.23 10-5 page 4 , 150 IEC climatic category; DIN IEC 68-1 Rev. 1.23 6 A °C 55/150/56 page 1 , Static characteristics Drain-source breakdown voltage 1) V ( BR )DSS V GS=0 V, I D=250 µA Gate , I S ,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery
|
Original
|
PDF
|
BSS225
L6327:
3000PCS/reel
BSS225
L6327
|
1999 - transistor 45 f 123
Abstract: K1412 E6327 Q67000-S306 transistor 123
Text: V 0.38 A 6 SOT-223 Ordering Code Q67000-S306 D BSP 123 Type BSP 123 S Marking BSP 123 Pin 4 Tape and Reel Information E6327 Maximum Ratings Parameter Symbol , -1 0 10 10 10 10 10 10 10 10 s 10 tp Data Sheet 5 05.99 BSP 123 Typ , BSP 123 SIPMOS ® Small-Signal Transistor · N channel · Enhancement mode · Logic Level · VGS , BSP 123 Maximum Ratings Parameter Symbol Values Chip or operating temperature Tj
|
Original
|
PDF
|
OT-223
Q67000-S306
E6327
transistor 45 f 123
K1412
E6327
Q67000-S306
transistor 123
|
1999 - Not Available
Abstract: No abstract text available
Text: 10 s 10 4 VDS Page 4 tp 2007-04-23 Rev. 1.23 5 Typ. output characteristic ID = , Rev. 1.23 BSP88 SIPMOS Ò Small-Signal-Transistor Feature · N-Channel · Enhancement mode · , ; DIN IEC 68-1 Page 1 2007-04-23 Rev. 1.23 Thermal Characteristics Parameter Characteristics , Drain-source breakdown voltage V GS=0, ID=250µA Symbol min. V( BR )DSS VGS(th) IDSS IGSS RDS(on) RDS(on) RDS , 2007-04-23 Rev. 1.23 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter
|
Original
|
PDF
|
BSP88
PG-SOT-223
VPS05163
L6327:
BSP88
20ents
|