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Part Manufacturer Description Datasheet Download Buy Part
LTC1064-4 Linear Technology IC SWITCHED CAPACITOR FILTER, BUTTERWORTH, LOWPASS, PDIP14, Active Filter
LTC1059AMJ/883 Linear Technology IC SWITCHED CAPACITOR FILTER, RESISTOR PROGRAMMABLE, UNIVERSAL, CDIP14, CERDIP-14, Active Filter
LTC1063CS Linear Technology IC SWITCHED CAPACITOR FILTER, BUTTERWORTH, LOWPASS, PDSO16, PLASTIC, SOL-16, Active Filter
LTC1064-2CS Linear Technology IC SWITCHED CAPACITOR FILTER, BUTTERWORTH, LOWPASS, PDSO16, PLASTIC, SOL-16, Active Filter
LTC1064-4CS Linear Technology IC SWITCHED CAPACITOR FILTER, ELLIPTIC, LOWPASS, PDSO16, PLASTIC, SOL-16, Active Filter
LTC1064-7MJ#TR Linear Technology IC SWITCHED CAPACITOR FILTER, BESSEL, LOWPASS, CDIP14, LEAD FREE, CERDIP-14, Active Filter

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Q65110A3121

Abstract: bpw filter BPW34 Q65110A2699 C 34 F BPW 34 FAS
Text: PIN Silicon PIN Photodiode with Daylight Filter ; in SMT and as Reverse Gullwing RoHS Lead (Pb) Free Product - RoHS Compliant BPW 34 FA, BPW 34 FAS, BPW 34 FASR BPW 34 FA BPW 34 FAS BPW 34 FASR · 730 nm 1100 nm · 20 ns · DIL · BPW 34 FAS / FASR Features · Especially suitable for , with high packing density · BPW 34 FAS / FASR: Suitable for reflow soldering Applications · Automotive , Ee=1 mW/cm2, VR = 5 V, = 870 nm Ip (A) 50 (40) 50 (40) 50 (40) BPW 34 FA BPW 34 FAS BPW 34 FASR


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2005 - bpw 104

Abstract: bpw 50 Q65110A3121 BPW 34 FAS
Text: with Daylight Filter ; in SMT and as Reverse Gullwing Lead (Pb) Free Product - RoHS Compliant BPW 34 FA, BPW 34 FAS, BPW 34 FAS (R18R) BPW 34 FA BPW 34 FAS BPW 34 FAS (R18R) Wesentliche , Schaltzeit (typ. 20 ns) · DIL-Plastikbauform mit hoher Packungsdichte · BPW 34 FAS/(R18R): geeignet für , · Short switching time (typ. 20 ns) · DIL plastic package with high packing density · BPW 34 FAS , BPW 34 FA Q62702P1129 BPW 34 FAS Q65110A3121 BPW 34 FAS (R18R) Q65110A2699


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BPW 64 photo

Abstract: 77NB BPW 64 photo diode D5100 77nA bpw 77na BPW 61 BPW 64 bpx43-5 smd BPW 56 photo
Text: Applications J BPW 20R 68 BPW 21R (with V(X) filter ) 60 (>20) 7.5 50° 9 (>4.5) I 500 3.5 450 1 , BPW17N BPW 85A 0.36 40° 1 2 ° 0.14 (>0.07) j./ 1 (>0.5) 0.8 to 2.5 ;*-r- ; E - UrC . . C 47 BPW 85B BPW85C BPW 96A 25° 1.5 to 4 3 to 8 1.5 to 4.5 1 1.5 0 .1 r h ^ , 'c E 48 BPW 96B BPW96C 0.18 2 0 ° 2.5 to 7.5 4.5 to 15 í 49 BPV11 , 0.07 60° 0.5 (>0.25) 1 5 1 Photo Transistors in Plastic Package with Filter Matched for GaAs


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PDF BPW16N BPW17N BPW85C BPW96C BPV11 BPV23FL TESS5400 900nm) BPW 64 photo 77NB BPW 64 photo diode D5100 77nA bpw 77na BPW 61 BPW 64 bpx43-5 smd BPW 56 photo
1999 - "rain sensor"

Abstract: Q65110A2700 Q65110A2740 bpw 104 BPW 40 GEOY6643 GEOY6863 marking code fsr BPW34F
Text: with Daylight Filter ; in SMT and as Reverse Gullwing Lead (Pb) Free Product - RoHS Compliant BPW 34 F, BPW 34 FS, BPW 34 FSR BPW 34 F BPW 34 FS BPW 34 FSR Wesentliche Merkmale Features · , DIL-Plastikbauform mit hoher Packungsdichte · BPW 34 FS / FSR: geeignet für Reflow Löten · Especially suitable , package with high packing density · BPW 34 FS / FSR: suitable for reflow soldering Anwendungen , 5 V, = 950 nm Photocurrent Ip (A) BPW 34 F Q62702P0929 50 (40) BPW 34 FS


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2004 - Q62702-P1129

Abstract: Q62702-P1829 Q62702-P463 BPW 34 FAS
Text: with Daylight Filter ; in SMT and as Reverse Gullwing BPW 34 FA, BPW 34 FAS, BPW 34 FAS (R18R) BPW 34 FA BPW 34 FAS BPW 34 FAS (R18R) Wesentliche Merkmale Features · Speziell geeignet , DIL-Plastikbauform mit hoher Packungsdichte · BPW 34 FAS/(R18R): geeignet für Vapor-Phase Löten und IR-Reflow Löten , ns) · DIL plastic package with high packing density · BPW 34 FAS/(R18R): Suitable for vapor-phase , Photointerrupters Typ Type Bestellnummer Ordering Code BPW 34 FA Q62702-P1129 BPW 34 FAS


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2001 - E9087

Abstract: Q62702-P1129 Q62702-P1829 Q62702-P463 GEOY6643 BPW 34 FAS
Text: with Daylight Filter ; in SMT and as Reverse Gullwing BPW 34 FA, BPW 34 FAS, BPW 34 FAS (E9087) BPW 34 FA BPW 34 FAS BPW 34 FAS (E9087) Wesentliche Merkmale Features · Speziell geeignet , DIL-Plastikbauform mit hoher Packungsdichte · BPW 34 FAS/(E9087): geeignet für Vapor-Phase Löten und IR-Reflow , (typ. 20 ns) · DIL plastic package with high packing density · BPW 34 FAS/(E9087): Suitable for , Photointerrupters Typ Type Bestellnummer Ordering Code BPW 34 FA Q62702-P1129 BPW 34 FAS


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PDF E9087) E9087 Q62702-P1129 Q62702-P1829 Q62702-P463 GEOY6643 BPW 34 FAS
2004 - Q62702-P1604

Abstract: Q62702-P1826 Q62702-P929
Text: with Daylight Filter ; in SMT and as Reverse Gullwing BPW 34 F, BPW 34 FS, BPW 34 FS (R18R) BPW 34 F BPW 34 FS BPW 34 FS (R18R) Wesentliche Merkmale Features · · · · · · · · , Packungsdichte BPW 34 FS/(R18R); geeignet für Vapor-Phase Löten und IR-Reflow Löten Especially suitable for applications of 950 nm Short switching time (typ. 20 ns) DIL plastic package with high packing density BPW , Ordering Code BPW 34 F Q62702-P929 BPW 34 FS Q62702-P1604 BPW 34 FS (R18R) Q62702-P1826


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2001 - E9087

Abstract: Q62702-P1129 Q62702-P1829 Q62702-P463 BPW 34 FAS
Text: with Daylight Filter ; in SMT and as Reverse Gullwing BPW 34 FA, BPW 34 FAS, BPW 34 FAS (E9087) BPW 34 FA BPW 34 FAS BPW 34 FAS (E9087) Wesentliche Merkmale Features · Speziell geeignet , DIL-Plastikbauform mit hoher Packungsdichte · BPW 34 FAS/(E9087): geeignet für Vapor-Phase Löten und IR-Reflow , (typ. 20 ns) · DIL plastic package with high packing density · BPW 34 FAS/(E9087): Suitable for , Photointerrupters Typ Type Bestellnummer Ordering Code BPW 34 FA Q62702-P1129 BPW 34 FAS


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PDF E9087) E9087 Q62702-P1129 Q62702-P1829 Q62702-P463 BPW 34 FAS
1999 - bpw 104

Abstract: "rain sensor" near IR sensors with daylight filter BPW 40 rain SENSOR bpw filter bpw 50 BPW 40 datasheet BPW 34 datasheet BPW 34 FAS
Text: with Daylight Filter ; in SMT and as Reverse Gullwing Lead (Pb) Free Product - RoHS Compliant BPW 34 FA, BPW 34 FAS, BPW 34 FASR BPW 34 FA BPW 34 FAS BPW 34 FASR Wesentliche Merkmale , (typ. 20 ns) · DIL-Plastikbauform mit hoher Packungsdichte · BPW 34 FAS / FASR: geeignet für Reflow , (typ. 20 ns) · DIL plastic package with high packing density · BPW 34 FAS / FASR: Suitable for reflow , Fotostrom, Ee=1 mW/cm2, VR = 5 V, = 870 nm Photocurrent Ip (A) BPW 34 FA Q62702P1129 50 (40


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2001 - E9087

Abstract: Q62702-P1604 Q62702-P1826 Q62702-P929
Text: with Daylight Filter ; in SMT and as Reverse Gullwing BPW 34 F, BPW 34 FS, BPW 34 FS (E9087) BPW 34 F BPW 34 FS BPW 34 FS (E9087) Wesentliche Merkmale Features · · · · · · · · , Packungsdichte BPW 34 FS/(E9087); geeignet für Vapor-Phase Löten und IR-Reflow Löten Especially suitable for applications of 950 nm Short switching time (typ. 20 ns) DIL plastic package with high packing density BPW , Ordering Code BPW 34 F Q62702-P929 BPW 34 FS Q62702-P1604 BPW 34 FS (E9087) Q62702-P1826


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PDF E9087) E9087 Q62702-P1604 Q62702-P1826 Q62702-P929
2001 - BPW 40

Abstract: Q62702-P1604 Q62702-P1826 Q62702-P929 E9087
Text: with Daylight Filter ; in SMT and as Reverse Gullwing BPW 34 F, BPW 34 FS, BPW 34 FS (E9087) BPW 34 F BPW 34 FS BPW 34 FS (E9087) Wesentliche Merkmale Features · · · · · · · · , Packungsdichte BPW 34 FS/(E9087); geeignet für Vapor-Phase Löten und IR-Reflow Löten Especially suitable for applications of 950 nm Short switching time (typ. 20 ns) DIL plastic package with high packing density BPW , BPW 34 F Q62702-P929 BPW 34 FS Q62702-P1604 BPW 34 FS (E9087) Q62702-P1826


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PDF E9087) BPW 40 Q62702-P1604 Q62702-P1826 Q62702-P929 E9087
2005 - bpw 104

Abstract: C 34 f
Text: with Daylight Filter ; in SMT and as Reverse Gullwing Lead (Pb) Free Product - RoHS Compliant BPW 34 F, BPW 34 FS, BPW 34 FS (R18R) BPW 34 F BPW 34 FS BPW 34 FS (R18R) Wesentliche Merkmale , . 20 ns) DIL-Plastikbauform mit hoher Packungsdichte BPW 34 FS/(R18R); geeignet für Vapor-Phase , . 20 ns) DIL plastic package with high packing density BPW 34 FS/(R18R); suitable for vapor-phase , equipment · Photointerrupters 2005-05-10 Typ Type Bestellnummer Ordering Code BPW 34 F


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near IR sensors with daylight filter

Abstract: near IR photodiodes with daylight filter BPW 23 nf Telefunken Phototransistor photodiode application luxmeter Vishay Telefunken Phototransistor pin diodes radiation detector APPLICATION NOTE BpW34 photo voltaic cell BPW34 osram
Text: V Photo Voltaic Cell with Filter (Calibrated) , 1 cm2 = 0.01 sr Iro 10 k mV Riw1 M , elements. Searching for the right detector diode type The photodiode BPW 20 R is a pn diode based on , 8609 Figure 38. Open circuit voltage vs. irridiance, parameter: dark reverse current, BPW 20 R , photodiode BPW 20 R However, for the pin diodes (BPW34/ S153P family) similar results with shifted time , 2 0 104 94 8616 105 106 107 108 ­ 3 dB - Bandwidth ( Hz ) Figure 45. BPW 41


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near IR sensors with daylight filter

Abstract: luxmeter osram BPW20 photoconductive cells characteristic dc voltmeter circuit diagrams short distance measurement ir infrared diode photodiode application luxmeter BPW 23 nf application luxmeter luxmeter detector
Text: Cell with Filter (Calibrated) , 1 cm2 = 0.01 sr Iro 10k mV Riw1M a = 100 mm Position , right detector diode type The photodiode BPW 20 R is a pn diode based on rather highly doped n-silicon , ( mW ) Figure 123. Open circuit voltage vs. irridiance, parameter: dark reverse current, BPW 20 R , 129. Switching times vs. wavelength for photodiode BPW 20 R However, for the pin diodes (BPW34 , dB - Bandwidth ( Hz ) Figure 130. BPW 41-family, bandwidth vs. reverse bias voltage, parameter


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PDF w10MW) near IR sensors with daylight filter luxmeter osram BPW20 photoconductive cells characteristic dc voltmeter circuit diagrams short distance measurement ir infrared diode photodiode application luxmeter BPW 23 nf application luxmeter luxmeter detector
2014 - Not Available

Abstract: No abstract text available
Text: 2014-01-09 Silicon PIN Photodiode with Daylight Blocking Filter Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Version 1.1 BPW 34 FSR Features: Besondere Merkmale: • Especially suitable for the , Ordering Code Bestellnummer 2 λ = 950 nm, Ee = 1 mW/cm , VR = 5 V IP [µA] BPW 34 FSR 2014-01-09 50 (≥ 40) Q65110A2740 1 Version 1.1 BPW 34 FSR Maximum Ratings (TA = 25 °C , /W Version 1.1 BPW 34 FSR Parameter Symbol Values Unit Bezeichnung Symbol


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Photo diode TFK S 186 P

Abstract: TFMS 4300 IR diodes TFK S 186 P TFK BPW 41 N diode TFMt 4300 tfmt 4300 ir detector IR diode TFK 186 tfms 4300 n mobile receptor tfm 5380 TFK S 186 P
Text: package with filter matched for GaAs IREDs (950 nm) S 350 P BPW 78 A BPW 78 B 0.36 0.36 0 36 40 , plastic package with filter matched for GaAlAs IREDs (875 nm) BPW 82 * 7.5 65_ 48(>41) 870 , Type yp BPW 20 R BPW 21 R (with V(l) filter ) 1) Characteristics Photo Sensitive Area mm2 , guide 1.1 Alpha-numeric index BPW 97 B BP 104 233 BPV 10 245 BPV 10 F 237 BPV , . 119 TSHF 5400 125, 499 BPV 22 NF BPV 23 F BPV 23 NF 281 285, 507 I BPW 13 293


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2014 - Not Available

Abstract: No abstract text available
Text: 2014-01-09 Silicon PIN Photodiode with Daylight Filter ; in SMT as Reverse Gullwing Si-PINFotodiode mit Tageslichtsperrfilter; in SMT als Reverse Gullwing Version 1.1 BPW 34 FASR Features , IP [µA] BPW 34 FASR 50 (≥ 40) 2014-01-09 Q65110A2699 1 Version 1.1 BPW 34 FASR , 0.65 ° nA A/W Version 1.1 BPW 34 FASR Parameter Symbol Values Unit , 2014-01-09 3 Version 1.1 BPW 34 FASR Photocurrent / Open-Circuit Voltage Fotostrom


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BPW 34 FAS

Abstract: No abstract text available
Text: 2014-01-09 Silicon PIN Photodiode with Daylight Filter ; in SMT Si-PIN-Fotodiode mit Tageslichtsperrfilter; in SMT Version 1.1 BPW 34 FAS Features: Besondere Merkmale: • Especially suitable , Ordering Code Bestellnummer 2 λ = 870 nm, Ee = 1 mW/cm , VR = 5 V IP [µA] BPW 34 FAS 2014-01-09 50 (≥ 40) Q65110A3121 1 Version 1.1 BPW 34 FAS Maximum Ratings (TA = 25 °C , /W Version 1.1 BPW 34 FAS Parameter Symbol Values Unit Bezeichnung Symbol


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PDF D-93055 BPW 34 FAS
1995 - BPW41N

Abstract: bpw41 BPW41N IR DATA bpw photodiode bpw 41
Text: TELEFUNKEN Semiconductors BPW 41 N Silicon PIN Photodiode Description BPW41N is a high , is an IR filter , spectrally matched to GaAs or GaAs on GaAlAs IR emitters (lp = 950 nm). The large , radiant sensitivity D Fast response times D Small junction capacitance D Plastic case with IR filter (l , : 01.09.1994 1 BPW 41 N TELEFUNKEN Semiconductors Absolute Maximum Ratings Tamb = 25_C Parameter , mV/K mA %/K mA deg nm nm W/ Hz ns ns Rev. A1: 01.09.1994 BPW 41 N TELEFUNKEN


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PDF BPW41N D-74025 bpw41 BPW41N IR DATA bpw photodiode bpw 41
1995 - BPW78

Abstract: BPW78A BPW78B Telefunken Phototransistor ica 700
Text: TELEFUNKEN Semiconductors BPW 78 Silicon NPN Phototransistor Description BPW78 is a high , recessed lens provides a high sensitivity in a low profile case. The epoxy package itself is an IR filter , filter 94 8487 D Suitable for near infrared radiation D High radiant sensitivity D Super flat , BPW 78 TELEFUNKEN Semiconductors Absolute Maximum Ratings Tamb = 25_C Parameter Collector , Symbol Ica Min 1 Typ 2 Ica 2 4 Max 3 Unit mA mA Rev. A1: 01.09.1994 BPW


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PDF BPW78 850nm) D-74025 BPW78A BPW78B Telefunken Phototransistor ica 700
2004 - Q62702-P1602

Abstract: Q62702-P1790 Q62702-P73
Text: Reverse Gullwing BPW 34, BPW 34 S, BPW 34 S (R18R) BPW 34 BPW 34 S BPW 34 S (R18R , Kurze Schaltzeit (typ. 20 ns) · DIL-Plastikbauform mit hoher Packungsdichte · BPW 34 S/(R18R , packing density · BPW 34 S/(R18R): suitable for vapor-phase and IR-reflow soldering (JEDEC level 4 , Industrieelektronik · ,Messen/Steuern/Regeln" · · · · Typ Type Bestellnummer Ordering Code BPW 34 Q62702-P73 BPW 34 S Q62702-P1602 BPW 34 S (R18R) Q62702-P1790 2004-03-10 1


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2013 - Not Available

Abstract: No abstract text available
Text: 2007-03-29 Silicon PIN Photodiode with Daylight Blocking Filter Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Version 1.0 BPW 34 FS Features: Besondere Merkmale: • Especially suitable for the , Ordering Code Bestellnummer 2 λ = 950 nm, Ee = 1 mW/cm , VR = 5 V IP [µA] BPW 34 FS 2007-03-29 50 (≥ 40) Q65110A2700 1 Version 1.0 BPW 34 FS Maximum Ratings (TA = 25 °C , /W Version 1.0 BPW 34 FS Parameter Symbol Values Unit Bezeichnung Symbol


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2013 - Not Available

Abstract: No abstract text available
Text: 2007-03-30 Silicon PIN Photodiode with Daylight Filter ; in SMT as Reverse Gullwing Si-PINFotodiode mit Tageslichtsperrfilter; in SMT als Reverse Gullwing Version 1.0 BPW 34 FASR Features , IP [µA] BPW 34 FASR 50 (≥ 40) 2007-03-30 Q65110A2699 1 Version 1.0 BPW 34 FASR , 0.65 ° nA A/W Version 1.0 BPW 34 FASR Parameter Symbol Values Unit , 2007-03-30 3 Version 1.0 BPW 34 FASR Photocurrent / Open-Circuit Voltage Fotostrom


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Not Available

Abstract: No abstract text available
Text: 2014-01-09 Silicon PIN Photodiode with Daylight Blocking Filter Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Version 1.1 BPW 34 FS Features: Besondere Merkmale: • Especially suitable for the , Ordering Code Bestellnummer 2 λ = 950 nm, Ee = 1 mW/cm , VR = 5 V IP [µA] BPW 34 FS 2014-01-09 50 (≥ 40) Q65110A2700 1 Version 1.1 BPW 34 FS Maximum Ratings (TA = 25 °C , /W Version 1.1 BPW 34 FS Parameter Symbol Values Unit Bezeichnung Symbol


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1995 - BPW83

Abstract: LARGE SURFACE AREA PHOTODIODE filter BPW 61
Text: BPW 83 TELEFUNKEN Semiconductors Silicon PIN Photodiode Description BPW83 is a high speed , an IR filter , spectrally matched to GaAs or GaAlAs IR emitters (lpy800nm). The large active area , sensitivity D Fast response times D Small junction capacitance D Plastic case with IR filter D Suitable , Applications High speed photo detector Rev. A1: 01.09.1994 1 BPW 83 TELEFUNKEN Semiconductors , Unit V nA pF pF mV mA mA deg nm nm W/ Hz ns ns Rev. A1: 01.09.1994 BPW 83


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PDF BPW83 lpy800nm) 870nm D-74025 LARGE SURFACE AREA PHOTODIODE filter BPW 61
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